22 SRAM 1,012

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-8605201WX	NXP Semiconductors	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BIPOLAR	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5		8	IN-LINE				125 Cel		256X8	256		-55 Cel		DUAL		R-PDIP-T22		5.25 V			Not Qualified	2048 bit	4.75 V
5962-8605201WA	NXP Semiconductors	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BIPOLAR	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5		8	IN-LINE				125 Cel		256X8	256		-55 Cel	TIN LEAD	DUAL		R-PDIP-T22		5.25 V			Not Qualified	2048 bit	4.75 V		e0
8X350/BWA	NXP Semiconductors	STANDARD SRAM	MILITARY	22		RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		256 words		5		8	IN-LINE				125 Cel		256X8	256		-55 Cel		DUAL		R-CDIP-T22		5.25 V				2048 bit	4.75 V
TC55416P-45	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	65536 bit			e0			.001 Amp		45 ns
TC55416P-25H	Toshiba	CACHE SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0		NO	.001 Amp	27.2 mm	25 ns
TMM2078AD-45	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	16384 bit			e0					45 ns
TC5561P-70	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0		NO	.00005 Amp	27.2 mm	70 ns
TMM2078D-55	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	16384 bit			e0					55 ns
TMM2078AD-35	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	16384 bit			e0					35 ns
TC5562P-55	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel	TIN LEAD	DUAL		R-PDIP-T22		5.5 V	4.15 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	AUTOMATIC STANDBY MODE	e0					55 ns
TC55416P-20	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.75 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	65536 bit			e0			.001 Amp		20 ns
TC5501D-1	Toshiba	STANDARD SRAM	OTHER	22	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		256 words				4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	85 Cel	3-STATE	256X4	256		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	1024 bit			e0			.00001 Amp		650 ns
TC5562P-45	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0		NO	.002 Amp	27.2 mm	45 ns
TC5501D	Toshiba	STANDARD SRAM	OTHER	22	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		256 words				4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	85 Cel	3-STATE	256X4	256		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	1024 bit			e0			.00001 Amp		450 ns
TC5501P-1	Toshiba		OTHER	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		4	IN-LINE			2.54 mm	85 Cel		256X4	256		-30 Cel	TIN LEAD	DUAL		R-PDIP-T22		5.5 V	4.5 mm	10.16 mm		1024 bit	4.5 V	SEATED HGT CALCULATED	e0				27.6 mm	650 ns
TC5561P-55	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0		NO	.00005 Amp	27.2 mm	55 ns
TC55416P-35	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	65536 bit			e0			.001 Amp		35 ns
TC55416P-20H	Toshiba	CACHE SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0		NO	.001 Amp	27.2 mm	20 ns
TC5562P-35	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0		NO	.002 Amp	27.2 mm	35 ns
TC5561P-45	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0		NO	.00005 Amp	27.2 mm	45 ns
TMM2078D-35	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	16384 bit			e0					35 ns
TMM2078AD-25	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	16384 bit			e0					25 ns
TC55416P-15H	Toshiba	CACHE SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0		NO	.001 Amp	27.2 mm	15 ns
TMM2078D-45	Toshiba	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	16384 bit			e0					45 ns
TC55416P-35H	Toshiba	CACHE SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22		5.5 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0		NO	.001 Amp	27.2 mm	35 ns
5962-01-406-5911	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel		DUAL		R-PDIP-T22					Not Qualified	65536 bit						.002 Amp		45 ns
HM6787HAP-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL		R-PDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						27.08 mm	20 ns
UPD2101ALC	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	256 words	SEPARATE			4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	1024 bit			e0					350 ns
5962-8601505YA	Renesas Electronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	125 Cel		64KX1	64K		-55 Cel	TIN LEAD	DUAL		R-XDIP-T22	1	5.5 V	5.969 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0	260			27.559 mm	55 ns
5962-8685920TA	Renesas Electronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel		DUAL		R-XDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						29.337 mm	55 ns
HM6787HP-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL		R-PDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						27.08 mm	20 ns
UPD5101LC-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	SEPARATE	5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	1024 bit			e0			.00001 Amp		450 ns
HM6787HAP-12	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL		R-PDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						27.08 mm	12 ns
UPD2101ALC-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	SEPARATE			4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	1024 bit			e0					250 ns
MWS5101ADL2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	SEPARATE	5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	1024 bit			e0			.00001 Amp		250 ns
HM6787P-35	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL		R-PDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						27.8 mm	30 ns
HM6787HAP-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL		R-PDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						27.08 mm	15 ns
HS1-6551RH-Q	Renesas Electronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	20k Rad(Si)	CERAMIC	NO		CMOS	38535V;38534K;883S	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	13 mA	256 words		5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256X4	256	4.5 V	-55 Cel		DUAL		R-XDIP-T22					Not Qualified	1024 bit						.0001 Amp		315 ns
CDP1826CDX	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	22	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	64 words		5	5	8	IN-LINE	DIP22,.4	SRAMs	2.54 mm	85 Cel		64X8	64	2.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22									e0			.000025 Amp		1000 ns
HM6788P-30	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel		16KX4	16K		0 Cel		DUAL		R-PDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						27.08 mm	30 ns
HM-6551B/883	Renesas Electronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		4	IN-LINE			2.54 mm	125 Cel		256X4	256		-55 Cel	TIN LEAD	DUAL		R-GDIP-T22		5.5 V	5.72 mm	10.16 mm	Not Qualified	1024 bit	4.5 V		e0					220 ns
HM1-6551/883	Renesas Electronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	6.3 mA	256 words		5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256X4	256	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-GDIP-T22		5.5 V			Not Qualified	1024 bit	4.5 V	ADDRESS LATCH; LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0		NO	.00001 Amp		300 ns
HM6787HP-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL		R-PDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						27.08 mm	15 ns
HM9-6533-2	Renesas Electronics	STANDARD SRAM	MILITARY	22	DFP	RECTANGULAR		CERAMIC	YES		CMOS		FLAT	PARALLEL	SYNCHRONOUS		1024 words	COMMON			4	FLATPACK	FL22,.4	SRAMs	1.27 mm	125 Cel	3-STATE	1KX4	1K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F20					Not Qualified	4096 bit			e0					400 ns
HM6788HAP-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel		16KX4	16K		0 Cel		DUAL		R-PDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						27.08 mm	15 ns
UPD2101AL-4	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	256 words	SEPARATE			4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	1024 bit			e0					450 ns
UPD5101LC	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	SEPARATE	5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	1024 bit			e0			.00001 Amp		650 ns
MWS5101DL2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	SEPARATE	5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	1024 bit			e0			.000015 Amp		250 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.