22 SRAM 1,012

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
HM6788HAP-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel		16KX4	16K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				27.08 mm	20 ns
HM6787CG-30	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	BICMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	70 Cel		64KX1	64K		0 Cel		QUAD	R-CQCC-N22	5.5 V	2.11 mm	7.37 mm	Not Qualified	65536 bit	4.5 V				12.45 mm	30 ns
HM6787P-30	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				27.08 mm	30 ns
UPD2101AL-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	256 words	SEPARATE			4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	1024 bit			e0			250 ns
HM6788HP-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel		16KX4	16K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				27.08 mm	20 ns
UPD2101ALC-4	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	256 words	SEPARATE			4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	1024 bit			e0			450 ns
HM6788HAP-12	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel		16KX4	16K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				27.08 mm	12 ns
HM6787CG-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	BICMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	70 Cel		64KX1	64K		0 Cel		QUAD	R-CQCC-N22	5.5 V	2.11 mm	7.37 mm	Not Qualified	65536 bit	4.5 V				12.45 mm	25 ns
HM1-6551B/883	Renesas Electronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		4	IN-LINE			2.54 mm	125 Cel		256X4	256		-55 Cel	TIN LEAD	DUAL	R-GDIP-T22	5.5 V	5.72 mm	10.16 mm	Not Qualified	1024 bit	4.5 V	ADDRESS LATCH	e0			220 ns
HM6788P-35	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel		16KX4	16K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				27.08 mm	35 ns
HM6787P-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				27.08 mm	25 ns
HM6788HP-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel		16KX4	16K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				27.08 mm	15 ns
UPD4362D-55	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	65536 bit			e0	.002 Amp		55 ns
UPD4361C-70L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.00005 Amp		70 ns
HM6288LP-25	Renesas Electronics	CACHE SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel		16KX4	16K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				27.08 mm	25 ns
HM6288LP-35	Renesas Electronics	CACHE SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel		16KX4	16K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				27.08 mm	35 ns
UPD4361C-40	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.00005 Amp		40 ns
UPD4361C-70	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.002 Amp		70 ns
UPD4361K-55	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N22				Not Qualified	65536 bit			e0	.002 Amp		55 ns
UPD4361C-55	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.002 Amp		55 ns
UPD421D-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			8	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	8192 bit			e0			250 ns
UPD410D-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	4096 bit			e0			90 ns
HM6287HLP-35	Renesas Electronics	CACHE SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP OPERATION			27.08 mm	35 ns
UPD4361K-40	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N22				Not Qualified	65536 bit			e0	.002 Amp		40 ns
HM6287LP-55	Renesas Electronics	CACHE SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP OPERATION			27.08 mm	55 ns
UPD410C-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	4096 bit			e0			100 ns
UPD4361K-45	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N22				Not Qualified	65536 bit			e0	.002 Amp		45 ns
UPD4362BCR-12	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.000002 Amp		12 ns
HM6287P-55	Renesas Electronics	CACHE SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				27.08 mm	55 ns
UPD410D	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	4096 bit			e0			200 ns
UPD4362BCR-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.000002 Amp		15 ns
UPD4361C-55L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.00005 Amp		55 ns
UPD421D-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			8	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	8192 bit			e0			200 ns
HM6288LP-45	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	70 Cel		16KX4	16K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				27.08 mm	45 ns
UPD410D-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	4096 bit			e0			100 ns
UPD4362BCR-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.000002 Amp		20 ns
UPD421D	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			8	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	8192 bit			e0			450 ns
UPD421D-5	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			8	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	8192 bit			e0			150 ns
UPD4361BCR-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.002 Amp		20 ns
HM6287HLP-25	Renesas Electronics	CACHE SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL	R-PDIP-T22	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP OPERATION			27.08 mm	25 ns
UPD410D-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	4096 bit			e0			150 ns
UPD4362C-45	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.002 Amp		45 ns
UPD4362D-70	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	65536 bit			e0	.002 Amp		70 ns
UPD4362C-70	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.002 Amp		70 ns
UPD4361BCR-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.002 Amp		15 ns
UPD410D-5	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		4096 words	SEPARATE			1	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	4096 bit			e0			80 ns
UPD4361BCR-12	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	65536 bit			e0	.002 Amp		12 ns
UPD421D-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			8	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	8192 bit			e0			300 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.