28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY62256NLL-70SNXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260		.000005 Amp	17.9324 mm	70 ns
CY62256NLL-70PXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e4	40	260		.000005 Amp	36.322 mm	70 ns
CY62256NLL-70SNXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260		.000005 Amp	17.9324 mm	70 ns
CY62256NLL-55SNXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260		.00001 Amp	17.9324 mm	55 ns
CY62256NLL-55SNXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260		.00001 Amp	17.9324 mm	55 ns
AS6C62256-55SIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDSO-G28	3	5.5 V	3.048 mm	8.6 mm	Not Qualified	262144 bit	2.7 V		e3/e6	40	250		.00002 Amp	18.491 mm	55 ns
5962-8866204NA	National Semiconductor	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel			32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28			5.84 mm	7.62 mm	Not Qualified	262144 bit			e0						45 ns
AS6C62256-55PCN	Alliance Memory	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	3.3	3/5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	MATTE TIN/TIN BISMUTH	DUAL		R-PDIP-T28		5.5 V	3.937 mm	15.24 mm	Not Qualified	262144 bit	2.7 V		e3/e6	NOT SPECIFIED	NOT SPECIFIED		.00002 Amp		55 ns
IS62C256AL-45ULI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel			32KX8	32K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G28	3	5.5 V	2.84 mm	8.405 mm	Not Qualified	262144 bit	4.5 V		e3	40	260			18.11 mm	45 ns
IS62C256AL-45ULI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28		5.5 V	2.84 mm	8.405 mm	Not Qualified	262144 bit	4.5 V		e3	10	260		.00002 Amp	18.11 mm	45 ns
AS7C3256A-10TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel		DUAL		R-PDSO-G28	3	3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V						.002 Amp	11.8 mm	10 ns
5962-8685916LA	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel			16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0						45 ns
DS1230Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-P28	1	5.5 V			Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0				.005 Amp		100 ns
DS1230Y-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P28	1	5.5 V			Not Qualified	262144 bit	4.5 V		e3				.0006 Amp		100 ns
M48Z35-70PC1	STMicroelectronics	SRAM STD	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			YES	.003 Amp	39.625 mm	70 ns
CY7C1399BN-12VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	55 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	3.6 V	3.556 mm	7.5057 mm	Not Qualified	262144 bit	3 V		e4	30	260		.0005 Amp	17.907 mm	12 ns
M48Z58Y-70PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	70 ns
CY7C199D-10VXIT	Infineon Technologies	STANDARD SRAM		28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34		1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5057 mm		262144 bit	4.5 V		e4	30	260	YES	.003 Amp	17.907 mm	10 ns
5962-8855202XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.0008 Amp	37.211 mm	70 ns
CY62256VNLL-70SNXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.4 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	2.7 V		e4	20	260		.000006 Amp	17.9324 mm	70 ns
5962-8855203XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.0008 Amp	37.211 mm	55 ns
5962-8855201XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.0008 Amp	37.211 mm	100 ns
IS61C256AL-12TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3	10	260		.0001 Amp	11.8 mm	12 ns
5962-8855204XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.0008 Amp	37.211 mm	45 ns
CY7C199D-10ZXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e4	30	260		.003 Amp	11.8 mm	10 ns
DS1225Y-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-XDMA-P28	1	5.5 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	38.865 mm	150 ns
DS1225Y-150+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		8192 words		5		8	MICROELECTRONIC ASSEMBLY			2.54 mm	70 Cel			8KX8	8K		0 Cel	MATTE TIN	DUAL		R-XDMA-P28		5.5 V	10.668 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3					38.227 mm	150 ns
IDT71256SA15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260	YES	.015 Amp	17.9324 mm	15 ns
AS7C256A-12JIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel		DUAL		R-PDSO-J28	3	5.5 V	3.759 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e3/e6				.002 Amp	18.415 mm	12 ns
DS1225AD-200-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V		e0				.005 Amp		200 ns
DS1225AD-200IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-PDMA-P28		5.5 V			Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp		200 ns
DS1225AD-200IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P28		5.5 V			Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.01 Amp		200 ns
IDT71256SA15YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	15 ns
CY62256VNLL-70SNXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.4 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	2.7 V		e4	20	260		.000006 Amp	17.9324 mm	70 ns
IDT71256SA20YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	20 ns
71256SA15YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34		1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm		262144 bit	4.5 V		e3	40	260	YES	.015 Amp	17.9324 mm	15 ns
IS61LV256AL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28		3.63 V	1.2 mm	8 mm	Not Qualified	262144 bit	3.135 V		e3	10	260		.00005 Amp	11.8 mm	10 ns
AS7C256A-10TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	TIN	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3				.002 Amp	11.8 mm	10 ns
71V256SA15PZGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G28	3	3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e3	40	260		.002 Amp	11.8 mm	15 ns
DS1225Y-200	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-XDMA-P28	1	5.5 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	38.865 mm	200 ns
DS1225Y-200+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	MATTE TIN	DUAL		R-XDMA-P28		5.5 V			Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.005 Amp		200 ns
IDT71V256SA15PZGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G28	3	3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e3	40	260	YES	.002 Amp	11.8 mm	15 ns
STK15C88-NF45	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.4	SRAMs	1.27 mm	70 Cel			32KX8	32K		0 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm	7.505 mm	Not Qualified	262144 bit	4.5 V		e3		260		.0015 Amp	17.905 mm	45 ns
STK15C88-NF45I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.4	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm	7.505 mm	Not Qualified	262144 bit	4.5 V		e3		260		.0015 Amp	17.905 mm	45 ns
DS1225Y-150-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V		e0				.005 Amp		150 ns
DS1225Y-150IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		8192 words		5		8	MICROELECTRONIC ASSEMBLY			2.54 mm	85 Cel			8KX8	8K		-40 Cel		DUAL		R-XDMA-P28		5.5 V	10.668 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION		NOT SPECIFIED	NOT SPECIFIED			38.227 mm	150 ns
DS1225Y-150IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P28		5.5 V			Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp		150 ns
BS62LV256SIP55	Brilliance Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	2.844 mm	8.407 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			18.11 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.