28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
71256L25YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34		1.27 mm	70 Cel			32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm		262144 bit	4.5 V		e3		260	YES	.0006 Amp	17.9324 mm	25 ns
71256L25YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34		1.27 mm	85 Cel			32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm		262144 bit	4.5 V		e3		260	YES	.0006 Amp	17.9324 mm	25 ns
71256L35YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34		1.27 mm	70 Cel			32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm		262144 bit	4.5 V		e3		260	YES	.0006 Amp	17.9324 mm	35 ns
7164L20TPGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words		5		8	IN-LINE			2.54 mm	85 Cel			8KX8	8K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.572 mm	7.62 mm		65536 bit	4.5 V		e3					34.671 mm	19 ns
7164S20YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	19 ns
7164S25YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			8KX8	8K		0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260			17.9324 mm	25 ns
7164S25YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	8KX8	8K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	25 ns
71V256SA12YGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28	3	3.6 V			Not Qualified	262144 bit	3 V		e3	NOT SPECIFIED	260		.002 Amp		12 ns
71V256SA15PZG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G28	3	3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e3	40	260		.002 Amp	11.8 mm	15 ns
71V256SA15YGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28	3	3.6 V			Not Qualified	262144 bit	3 V		e3	NOT SPECIFIED	260		.002 Amp		15 ns
BS62LV256SC70	Brilliance Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON		3/5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	3				Not Qualified	262144 bit			e0		240		.0000002 Amp		70 ns
CY7C199D-10VXI	Infineon Technologies	STANDARD SRAM		28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34		1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5057 mm		262144 bit	4.5 V		e4	30	260	YES	.003 Amp	17.907 mm	10 ns
CY7C199D-10ZXI	Infineon Technologies	STANDARD SRAM		28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm		262144 bit	4.5 V					YES	.003 Amp	11.8 mm	10 ns
DS1225AD-200	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDMA-P28		5.5 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	38.865 mm	200 ns
DS1225AD-200+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P28		5.5 V			Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.01 Amp		200 ns
HM62256BLSP-12	Renesas Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V						.0001 Amp		120 ns
HM62256LP-8	Renesas Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel			32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V							35.6 mm	85 ns
HM62256LP8	Advanced Electronic Packaging	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00005 Amp	35.6 mm	85 ns
HY62WT08081E-DG70C	Sk Hynix	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3		8	SMALL OUTLINE	SOP28,.47		1.27 mm	70 Cel	NO	3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1, (NON-MUXED)	R-PDSO-G28		3.6 V	2.794 mm	8.69 mm	Not Qualified	262144 bit	2.7 V	IT ALSO OPERATES FROM 4.5 TO 5.5V				YES	.000005 Amp	18.39 mm	70 ns
IDT71256L20YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J28	3				Not Qualified	262144 bit			e3	40	260		.00012 Amp		20 ns
IDT71256L35YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.00012 Amp	17.9324 mm	35 ns
IDT71256L35YI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	105 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e0	30	225		.0002 Amp	17.9324 mm	35 ns
IDT71256SA15TPG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.572 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e3				.015 Amp	34.671 mm	15 ns
IDT71256SA20YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	20 ns
IDT7164S25YG8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	8KX8	8K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	25 ns
IDT71V256SA10YG8	Integrated Device Technology	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-J28	3	3.6 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	3 V		e3	40	260	YES	.002 Amp	17.9324 mm	10 ns
IDT71V256SA12PZGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e3	40	260		.002 Amp	11.8 mm	12 ns
IDT71V256SA12YGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-J28		3.6 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	3 V		e3					17.9324 mm	12 ns
IDT71V256SA12YGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	3.6 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	3 V		e3	40	260		.002 Amp	17.9324 mm	12 ns
IDT71V256SA15YG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-J28	3	3.6 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	3 V		e3	40	260	YES	.002 Amp	17.9324 mm	15 ns
IDT71V256SA15YGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-J28	3	3.6 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	3 V		e3	40	260	YES	.002 Amp	17.9324 mm	15 ns
IS62LV256AL-45ULI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28		3.63 V	2.84 mm	8.405 mm	Not Qualified	262144 bit	2.97 V		e3	10	260		.00002 Amp	18.11 mm	45 ns
MB8464A-10LPSK	Fujitsu Semiconductor America	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel			8KX8	8K	2 V	0 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.25 mm	7.62 mm	Not Qualified	65536 bit	4.5 V					YES		35.36 mm	100 ns
MB8464A-10LP-SK	Fujitsu	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.000025 Amp		100 ns
R1LP5256ESP-5SI#B1	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28	3	5.5 V				262144 bit	4.5 V								55 ns
STK12C68-5C55M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel			8KX8	8K		-55 Cel		DUAL		R-CDIP-T28	1	5.5 V	4.14 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES					.004 Amp	35.56 mm	35 ns
BS62LV256TIP55	Brilliance Semiconductor	STANDARD SRAM	INDUSTRIAL	28	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE, THIN PROFILE			.55 mm	85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			11.8 mm	55 ns
IDT71V256SA15PZG	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G28	3	3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e3			YES	.002 Amp	11.8 mm	15 ns
IDT71256SA20Y	Integrated Device Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e0	30	225	YES	.015 Amp	17.9324 mm	20 ns
M48Z18-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE		SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	100 ns
DS1225Y	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP	e0					38.862 mm	200 ns
KM62256DLG-7	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V		e0				.000015 Amp	18.29 mm	70 ns
KM62256ALG-10	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V	BATTERY BACKUP	e0			YES	.00005 Amp	18.29 mm	100 ns
STK12C68-SF45I	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5		1.27 mm	85 Cel		3-STATE	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm	8.6865 mm		65536 bit	4.5 V					YES	.0025 Amp	18.3895 mm	45 ns
CY62256LL-70SNXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260			17.9324 mm	70 ns
CY7C199-15VC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					17.907 mm	15 ns
CY6264-55SNXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	8KX8	8K	4.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm	7.5057 mm	Not Qualified	65536 bit	4.5 V		e4	20	260		.03 Amp	17.9324 mm	55 ns
STK12C68-5L35M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	CHIP CARRIER	LCC28(UNSPEC)	SRAMs	1.27 mm	125 Cel			8KX8	8K		-55 Cel		QUAD		R-CQCC-N28	1	5.5 V	2.29 mm	8.89 mm	Not Qualified	65536 bit	4.5 V	RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES					.004 Amp	13.97 mm	35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.