28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
SN74ACT2151FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1024 words		5		11	CHIP CARRIER			1.27 mm	70 Cel	TOTEM POLE	1KX11	1K		0 Cel		QUAD	1	S-PQCC-J28		5.25 V	4.57 mm	11.5062 mm	Not Qualified	11264 bit	4.75 V					NO		11.5062 mm	22 ns
SN74ACT2154-35JD	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T28					Not Qualified	16384 bit
SN74ACT2153N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		11	IN-LINE			2.54 mm	70 Cel	TOTEM POLE	1KX11	1K		0 Cel		DUAL	1	R-PDIP-T28		5.25 V	5.08 mm	15.24 mm	Not Qualified	11264 bit	4.75 V					NO		36.32 mm	22 ns
SN74ACT2152A-20FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28		5.5 V	4.57 mm	11.5062 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm	20 ns
SN74ACT2153FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1024 words		5		11	CHIP CARRIER			1.27 mm	70 Cel	TOTEM POLE	1KX11	1K		0 Cel		QUAD	1	S-PQCC-J28		5.25 V	4.57 mm	11.5062 mm	Not Qualified	11264 bit	4.75 V					NO		11.5062 mm	22 ns
SN74ACT2154A-25N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		36.32 mm	25 ns
SN74ACT2152-35FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		QUAD		S-PQCC-J28					Not Qualified	16384 bit
SN74ACT2154-35FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		QUAD		S-PQCC-J28					Not Qualified	16384 bit
DS1345W-150-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-T28		3.6 V			Not Qualified	1048576 bit	3 V	10 YEARS MINIMUM DATA RETENTION	e0						150 ns
DS1330W-150-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-T28		3.6 V			Not Qualified	262144 bit	3 V	10 YEARS MINIMUM DATA RETENTION	e0						150 ns
DS22B57	Analog Devices	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	3.3	3.3/5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		3.6 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	3 V	OPERATION OF 4.5 VOLTS TO 5.5 VOLTS ALSO POSSIBLE	e0				.001 Amp	36.83 mm	150 ns
DS1350W-150	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-XDMA-T28		3.6 V			Not Qualified	4194304 bit	3 V	10 YEARS MINIMUM DATA RETENTION	e0						150 ns
DS1330W-150	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-T28		3.6 V			Not Qualified	262144 bit	3 V	10 YEARS MINIMUM DATA RETENTION	e0						150 ns
DS1630AB-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		70 ns
DS1630AB-200	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		200 ns
DS1630Y-200	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		200 ns
DS1630AB-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		150 ns
DS1630Y-120	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		120 ns
DS1630Y-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		70 ns
DS1630AB-85	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		85 ns
DS1630Y-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		150 ns
DS1630AB-120	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		120 ns
DS1630Y-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		100 ns
DS1630AB-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		100 ns
DS1630AB-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		70 ns
DS1630Y-85	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		85 ns
DS1630Y-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		70 ns
DS2257S	Analog Devices	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON		3/5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0				.000001 Amp		150 ns
DS1345W-150	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-T28		3.6 V			Not Qualified	1048576 bit	3 V	10 YEARS MINIMUM DATA RETENTION	e0						150 ns
DS22B57S	Analog Devices	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	3.3	3.3/5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	1	3.6 V	2.65 mm	7.5 mm	Not Qualified	262144 bit	3 V	OPERATION OF 4.5 VOLTS TO 5.5 VOLTS ALSO POSSIBLE	e0				.001 Amp	17.9 mm	150 ns
DS1730Y-200IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words		3	3/3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		3.6 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	2.7 V	DATA RETENTION = 10 YRS	e0				.004 Amp	37.85 mm	200 ns
DS1350W-150-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-T28		3.6 V			Not Qualified	4194304 bit	3 V	10 YEARS MINIMUM DATA RETENTION	e0						150 ns
DS2257	Analog Devices	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3	3/5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		3.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	2.7 V		e0				.000001 Amp	31.495 mm	150 ns
DS1225AB-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P28		5.25 V			Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e3				.01 Amp		150 ns
DS1225AD-150IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P28		5.5 V			Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.01 Amp		150 ns
DS1230Y-120IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P28		5.5 V			Not Qualified	262144 bit	4.5 V		e3				.0006 Amp		120 ns
DS1235Y-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		0 Cel		DUAL		R-XDMA-X28		5.5 V			Not Qualified	262144 bit	4.5 V								100 ns
DS1230AB-200+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P28		5.25 V			Not Qualified	262144 bit	4.75 V		e3				.0006 Amp		200 ns
DS1225AD-170+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDIP-T28		5.5 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	DATA RETENTION > 10 YEARS	e3					38.862 mm	170 ns
DS1230AB	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-N28		5.25 V			Not Qualified	262144 bit	4.75 V	BATTERY BACK-UP	e0						200 ns
DS1230W-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		256KX8	256K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDIP-T28		3.6 V	10.668 mm	15.24 mm	Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e3				.00025 Amp	38.225 mm	150 ns
DS1225AB-200IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P28		5.25 V			Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e3				.01 Amp		200 ns
DS1230Y-55	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			120 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		45 ns
DS1230W-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		256KX8	256K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDIP-T28		3.6 V	10.668 mm	15.24 mm	Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e3				.00025 Amp	38.225 mm	100 ns
DS1230AB-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P28		5.25 V			Not Qualified	262144 bit	4.75 V		e3				.0006 Amp		150 ns
DS1230Y	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-N28		5.5 V			Not Qualified	262144 bit	4.5 V	BATTERY BACK-UP	e0						200 ns
DS1225AD-170-IND	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.005 Amp		170 ns
DS1230AB-85+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P28		5.25 V			Not Qualified	262144 bit	4.75 V		e3				.0006 Amp		85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.