28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MB84256C-70LL	Fujitsu Semiconductor America	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	2.8 mm	8.6 mm	Not Qualified	262144 bit	4.5 V		e0					17.75 mm	70 ns
MCM60256AP12	Motorola	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00005 Amp	36.83 mm	120 ns
MT5C6408DJ-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		5.5 V	3.66 mm	7.67 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0			YES	.0003 Amp	18.44 mm	20 ns
P5164SL-10	Intel	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V	4.44 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	LG-MAX, SEATED HT-CALCULATED	e0				.00005 Amp	37.2 mm	100 ns
STK11C68-C35I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-CDIP-T28	1	5.5 V	4.11 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	STORE/RECAL TO EEPROM SOFTWARE	e0				.00075 Amp	35.56 mm	35 ns
STK11C68-SF45	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		8KX8	8K		0 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm	8.6865 mm	Not Qualified	65536 bit	4.5 V		e3		260		.00075 Amp	18.3895 mm	45 ns
STK12C68-5C45M	Simtek	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K		-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	4.14 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	EEPROM HARDWARE/SOFTWARE STORE; SOFTWARE RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES	e0		240	YES	.004 Amp	35.56 mm	45 ns
STK12C68-5L55M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	CHIP CARRIER	LCC28(UNSPEC)	SRAMs	1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		R-CQCC-N28	1	5.5 V	2.29 mm	8.89 mm	Not Qualified	65536 bit	4.5 V	RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES					.004 Amp	13.97 mm	35 ns
STK12C68-L45I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	65 mA	8192 words		5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	85 Cel		8KX8	8K		-40 Cel		QUAD		R-CQCC-N28	1	5.5 V	2.29 mm	8.89 mm	Not Qualified	65536 bit	4.5 V						.02 Amp	13.97 mm	45 ns
STK12C68-PF25	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDIP-T28	1	5.5 V	4.82 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e4	40	260		.0015 Amp	34.67 mm	25 ns
STK12C68-SF25	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5		1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm	8.6865 mm		65536 bit	4.5 V					YES	.0015 Amp	18.3895 mm	25 ns
STK12C68-SF25ITR	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5		1.27 mm	85 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm	8.6865 mm		65536 bit	4.5 V					YES	.0025 Amp	18.3895 mm	25 ns
STK12C68-WF25I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e4	40	260		.0025 Amp	36.322 mm	25 ns
STK15C88-NF25ITR	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.4	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm	7.505 mm	Not Qualified	262144 bit	4.5 V		e3		260		.0015 Amp	17.905 mm	25 ns
STK20C04-WF25I	Simtek	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	512 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		512X8	512		-40 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.57 mm	15.24 mm	Not Qualified	4096 bit	4.5 V		e3		260		.00075 Amp	36.83 mm	25 ns
TC55257BSPL-10L	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	4.45 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00002 Amp	34.9 mm	100 ns
TC55257DFI-70V	Toshiba	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	2.7 mm	8.8 mm	Not Qualified	262144 bit	2.7 V		e0			YES		18.5 mm	120 ns
TC55257DFTI-85V	Toshiba	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE, THIN PROFILE			.55 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel		DUAL	1	R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V					YES		11.8 mm	150 ns
SNJ54AS871FK	Texas Instruments	MULTI-PORT SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel		16X4	16		-55 Cel		QUAD		S-CQCC-N28		5.5 V	2.03 mm	11.43 mm	Not Qualified	64 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			11.43 mm	16 ns
SMJ64C256-55FGM	Texas Instruments	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		QUAD	1	R-CQCC-N28		5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			55 ns
BQ4010YMA-70	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel		DUAL		R-XDMA-T28		5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	70 ns
BQ4011YMA-200N	Texas Instruments	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			75 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDIP-T28					Not Qualified	262144 bit							.004 Amp		200 ns
SM64C256-35FGM	Texas Instruments	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		QUAD	1	R-CQCC-N28		5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			35 ns
BQ4010YMA-85N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel		DUAL		R-XDMA-T28		5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	85 ns
SM64C256-45FGM	Texas Instruments	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		QUAD	1	R-CQCC-N28		5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			45 ns
BQ4011MA-150	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDMA-P28		5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	150 ns
SM68CE64-25JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel		DUAL	1	R-CDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0001 Amp		25 ns
SN54AS871FK	Texas Instruments	MULTI-PORT SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	TTL		NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel	3-STATE	16X4	16		-55 Cel		QUAD	2	S-CQCC-N28		5.5 V	2.03 mm	11.43 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A		NOT SPECIFIED	NOT SPECIFIED	NO		11.43 mm	20 ns
BQ4311LSH-N100	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		32KX8	32K		-40 Cel		DUAL		R-XDMA-G28		3.6 V			Not Qualified	262144 bit	3 V								100 ns
TMS62256L-15NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDIP-T28					Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		150 ns
TMS62256-12DH	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDSO-G28					Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED		.002 Amp		120 ns
BQ4011YMA-70	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDMA-P28		5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	70 ns
SMJ64C256-45FGM	Texas Instruments	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		QUAD	1	R-CQCC-N28		5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			45 ns
SMJ68CE64-25JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel		DUAL	1	R-CDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0001 Amp		25 ns
SMJ69CE72-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	9	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX9	8K	2 V	-55 Cel		DUAL	1	R-CDIP-T28		5.5 V			Not Qualified	73728 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		35 ns
TMS6264L-15DHR	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL		R-PDSO-G28					Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		150 ns
BQ4011MA-70	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDMA-P28		5.5 V			Not Qualified	262144 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp		70 ns
SNJ54ALS870FK	Texas Instruments	STANDARD SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel		16X4	16		-55 Cel		QUAD		S-CQCC-N28		5.5 V	2.03 mm	11.43 mm	Not Qualified	64 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			11.43 mm	24 ns
BQ4010YMA-200	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel		DUAL		R-XDMA-T28		5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	200 ns
BQ4011MA-200	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDMA-P28		5.5 V			Not Qualified	262144 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp		200 ns
SM69CE72-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	9	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX9	8K	2 V	-55 Cel		DUAL	1	R-CDIP-T28		5.5 V			Not Qualified	73728 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		35 ns
TMS62256-12NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28					Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED		.002 Amp		120 ns
BQ4010MA-150	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel		DUAL		R-XDMA-T28		5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	150 ns
BQ4011MA-100	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDMA-P28		5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	100 ns
BQ4010YMA-150N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel		DUAL		R-XDMA-T28		5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	150 ns
BQ4010LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel		DUAL		R-XDMA-T28		3.6 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.001 Amp	37.72 mm	70 ns
SMJ68CE256-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL	1	R-CDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		45 ns
TMS62256L-15DH	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDSO-G28					Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		150 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.