28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
BQ4010MA-70	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	DUAL		R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	70 ns
SM68CE256-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		45 ns
SN54ALS870FK	Texas Instruments	STANDARD SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	TTL		NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel	3-STATE	16X4	16		-55 Cel	QUAD	2	S-CQCC-N28	5.5 V	2.03 mm	11.43 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE	NOT SPECIFIED	NOT SPECIFIED	NO		11.43 mm	20 ns
BQ4011YMA-100N	Texas Instruments	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			75 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	DUAL		R-PDIP-T28				Not Qualified	262144 bit						.004 Amp		100 ns
BQ4010LYEBZ-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		8KX8	8K		-40 Cel	DUAL		R-XDMA-T28	5.5 V			Not Qualified	65536 bit	4.5 V					.001 Amp		70 ns
SN54ALS871FK	Texas Instruments	MULTI-PORT SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	TTL		NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel	3-STATE	16X4	16		-55 Cel	QUAD	2	S-CQCC-N28	5.5 V	2.03 mm	11.43 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A	NOT SPECIFIED	NOT SPECIFIED	NO		11.43 mm
SMJ68CE64-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0001 Amp		35 ns
BQ4011YMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	DUAL		R-PDMA-P28	5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	70 ns
SM64C256-55FGM	Texas Instruments	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel	QUAD	1	R-CQCC-N28	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	NO			55 ns
BQ4311YSH-N70	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		32KX8	32K		-40 Cel	DUAL		R-XDMA-G28	5.5 V			Not Qualified	262144 bit	4.5 V							70 ns
TMS6264L-12DH	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	DUAL		R-PDSO-G28				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		120 ns
BQ4011MA-150N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		32KX8	32K		-40 Cel	DUAL		R-XDMA-T28	5.5 V			Not Qualified	262144 bit	4.75 V							150 ns
BQ4010YMA-200N	Texas Instruments	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	DUAL		R-PDIP-T28				Not Qualified	65536 bit						.004 Amp		200 ns
TMS62256L-85NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	DUAL		R-PDIP-T28				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		85 ns
SM68CE64-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0001 Amp		35 ns
TMS62256L-85DH	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	DUAL		R-PDSO-G28				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		85 ns
SM68CE256-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		35 ns
TMS6264L-15DH	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	DUAL		R-PDSO-G28				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		150 ns
BQ4011YMA-150	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	DUAL		R-PDMA-P28	5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	150 ns
SN54AS870FK	Texas Instruments	MULTI-PORT SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	TTL		NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel	3-STATE	16X4	16		-55 Cel	QUAD	2	S-CQCC-N28	5.5 V	2.03 mm	11.43 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE	NOT SPECIFIED	NOT SPECIFIED	NO		11.43 mm	20 ns
BQ4010YMA-85	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	DUAL		R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	85 ns
SM68CE64-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0001 Amp		45 ns
TMS6709-20DJ	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES				J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K		0 Cel	DUAL		R-PDSO-J28				Not Qualified	262144 bit								20 ns
SMJ68CE256-55JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		55 ns
TMS6264L-15NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	DUAL		R-PDIP-T28				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		150 ns
TMS6264L-12NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	DUAL		R-PDIP-T28				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		120 ns
TMS6264L-10DH	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	DUAL		R-PDSO-G28				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		100 ns
SM68CE256-55JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		55 ns
BQ4010LYMA-70	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		3.3		8	IN-LINE			2.54 mm	70 Cel		8KX8	8K		0 Cel	DUAL		R-PDIP-T28	3.6 V	9.53 mm	18.415 mm		65536 bit	3 V						37.72 mm	70 ns
BQ4011YMA-100	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	DUAL		R-PDMA-P28	5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	100 ns
SMJ68CE64-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0001 Amp		45 ns
SN54ALS871JD	Texas Instruments	MULTI-PORT SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	125 Cel	3-STATE	16X4	16		-55 Cel	DUAL	2	R-CDIP-T28	5.5 V			Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A	NOT SPECIFIED	NOT SPECIFIED	NO
TMS62256L-12NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	DUAL		R-PDIP-T28				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		120 ns
SMJ69CE72-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	9	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX9	8K	2 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		45 ns
TMS6709-25DJ	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES				J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K		0 Cel	DUAL		R-PDSO-J28				Not Qualified	262144 bit								25 ns
TMS6264L-15N	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	DUAL		R-PDIP-T28				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		150 ns
TMS62256L-12DH	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	DUAL		R-PDSO-G28				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		120 ns
BQ4010YMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	DUAL		R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	70 ns
TMS62256L-10NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	DUAL		R-PDIP-T28				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		100 ns
SNJ54AS870FK	Texas Instruments	MULTI-PORT SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel		16X4	16		-55 Cel	QUAD		S-CQCC-N28	5.5 V	2.03 mm	11.43 mm	Not Qualified	64 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			11.43 mm	20 ns
BQ4010MA-200	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	DUAL		R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	200 ns
BQ4011YMA-200	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	DUAL		R-PDMA-P28	5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	200 ns
SMJ69CE72-25JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	9	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX9	8K	2 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		25 ns
TMS6264L-12N	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	DUAL		R-PDIP-T28				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		120 ns
BQ4010YEBZ-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		8KX8	8K		-40 Cel	DUAL		R-XDMA-T28	5.5 V			Not Qualified	65536 bit	4.5 V					.001 Amp		70 ns
SM69CE72-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	9	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX9	8K	2 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		45 ns
SMJ64C256-35FGM	Texas Instruments	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel	QUAD	1	R-CQCC-N28	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	NO			35 ns
BQ4011LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	DUAL		R-PDMA-P28	3.6 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		.001 Amp	37.72 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.