28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
DS1230W-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		256KX8	256K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-T28	3.6 V	10.668 mm	15.24 mm	Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e3	.00025 Amp	38.225 mm	100 ns
DS1225AB	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.25 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACK-UP	e0		38.862 mm	200 ns
DS1225AB-200+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDMA-P28	5.25 V			Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e3	.01 Amp		200 ns
DS1225AD-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP	e0		38.862 mm	200 ns
DS1230AB-200IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P28	5.25 V			Not Qualified	262144 bit	4.75 V		e3	.0006 Amp		200 ns
DS1230AB-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P28	5.25 V			Not Qualified	262144 bit	4.75 V		e3	.0006 Amp		100 ns
DS1230AB-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDIP-P28	5.25 V	9.4 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0006 Amp	38.227 mm	70 ns
DS1225AB-85+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDMA-P28	5.25 V			Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e3	.01 Amp		85 ns
DS1230-100-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0	.00015 Amp		100 ns
DS1225AD	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP	e0		38.862 mm	200 ns
DS1225AB-170+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-T28	5.25 V			Not Qualified	65536 bit	4.75 V	BATTERY BACK-UP	e3			170 ns
DS1225AB-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.25 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACK-UP	e0		38.862 mm	200 ns
DS1225AB-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-P28	5.25 V	10.668 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e3	.01 Amp	38.227 mm	70 ns
DS1230-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0	.00015 Amp		150 ns
DS1230-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0	.00015 Amp		100 ns
DS1230AB-55	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			120 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0	.005 Amp		45 ns
DS1225AB-150IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDMA-P28	5.25 V			Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e3	.01 Amp		150 ns
DS1225AD-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-P28	5.5 V	10.668 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3	.01 Amp	38.227 mm	70 ns
DS1225AB-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-P28	5.25 V	10.668 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e3	.01 Amp	38.227 mm	70 ns
DS1230-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0	.00015 Amp		150 ns
DS1230AB-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDIP-P28	5.25 V	9.4 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0006 Amp	38.227 mm	70 ns
DS1230Y-85+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P28	5.5 V			Not Qualified	262144 bit	4.5 V		e3	.0006 Amp		85 ns
DS1225AD-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDMA-P28	5.5 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3	.01 Amp	38.865 mm	150 ns
DS1230AB-120+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P28	5.25 V			Not Qualified	262144 bit	4.75 V		e3	.0006 Amp		120 ns
DS1230W	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL	R-XDMA-N28				Not Qualified	262144 bit		10 YEARS OF DATA RETENTION PERIOD	e0			150 ns
DS1225AB-170-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28				Not Qualified	65536 bit			e0	.005 Amp		170 ns
DS1230AB-120IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P28	5.25 V			Not Qualified	262144 bit	4.75 V		e3	.0006 Amp		120 ns
LC35W256GM-70U	Onsemi	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON		3/3.3	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel		DUAL	R-PDSO-G28				Not Qualified	262144 bit				.0000015 Amp		70 ns
LC36128ML-10	Onsemi	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	16384 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel		DUAL	R-PDSO-G28				Not Qualified	131072 bit				.000005 Amp		100 ns
LC3664NM-85	Onsemi	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.001 Amp		85 ns
LC3564RT-10LV	Onsemi	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	COMMON		2.2/3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.0000025 Amp		200 ns
LC3564RT-12LV	Onsemi	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	COMMON		2.2/3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.0000025 Amp		250 ns
LC3664NML-12	Onsemi	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.0001 Amp		120 ns
LC3564ASLL-10	Onsemi	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDIP-T28				Not Qualified	65536 bit				.000015 Amp		100 ns
LC3564RMF-15LV	Onsemi	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	COMMON		2.2/3	8	SMALL OUTLINE	SOP28,.4	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.0000025 Amp		300 ns
LC36128ML-70	Onsemi	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	16384 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel		DUAL	R-PDSO-G28				Not Qualified	131072 bit				.000005 Amp		70 ns
LC3664NML-85	Onsemi	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.0001 Amp		85 ns
LC3564AMLL-10	Onsemi	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.000015 Amp		100 ns
LC3564ALL-10	Onsemi	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDIP-T28				Not Qualified	65536 bit				.000015 Amp		100 ns
LC3664NM-12	Onsemi	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.001 Amp		120 ns
LC3664NM-10	Onsemi	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.001 Amp		100 ns
LC3564CT-55U	Onsemi	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.0000025 Amp		55 ns
LC3564ALL-12	Onsemi	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDIP-T28				Not Qualified	65536 bit				.000015 Amp		120 ns
LC3564ASLL-12	Onsemi	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDIP-T28				Not Qualified	65536 bit				.000015 Amp		120 ns
LC3664BML-12	Onsemi	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.0000025 Amp		120 ns
LC35W256GT-70U	Onsemi	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel		DUAL	R-PDSO-G28				Not Qualified	262144 bit				.0000015 Amp		70 ns
LC3564RM-15LV	Onsemi	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	COMMON		2.2/3	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.0000025 Amp		300 ns
LC3664BML-10	Onsemi	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL	R-PDSO-G28				Not Qualified	65536 bit				.0000025 Amp		100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.