28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TMS62256L-10DH	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDSO-G28				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		100 ns
NM43256AN-10L	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	262144 bit			e0				.00005 Amp		100 ns
SM69CE72-25JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	9	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX9	8K	2 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		25 ns
TMS6264L-10N	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL		R-PDIP-T28				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		100 ns
BQ4010MA-85	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel		DUAL		R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	85 ns
SMJ68CE256-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		35 ns
SNJ54AS871JD	Texas Instruments	MULTI-PORT SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	125 Cel		16X4	16		-55 Cel		DUAL		R-CDIP-T28	5.5 V			Not Qualified	64 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED				20 ns
BQ4310YSH-N70	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		8KX8	8K		-40 Cel		DUAL		R-XDMA-G28	5.5 V			Not Qualified	65536 bit	4.5 V								70 ns
BQ4010YMA-150	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel		DUAL		R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	150 ns
BQ4011YMA-150N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDMA-P28	5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	150 ns
TMS6264L-10NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL		R-PDIP-T28				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		100 ns
SN54AS871JD	Texas Instruments	MULTI-PORT SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	125 Cel	3-STATE	16X4	16		-55 Cel		DUAL	2	R-CDIP-T28	5.5 V			Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A		NOT SPECIFIED	NOT SPECIFIED	NO			20 ns
SN74ACT2154A-20FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	16384 bit	4.5 V					NO		11.5062 mm	20 ns
SN74ALS871N	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	2	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A		NOT SPECIFIED	NOT SPECIFIED	NO		36.32 mm
SN74ACT2153-25JD	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				1024 words		5	5	12	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		1KX12	1K		0 Cel		DUAL		R-XDIP-T28				Not Qualified	12288 bit									25 ns
SN74ACT2152-35N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T28				Not Qualified	16384 bit
SN74ACT2152-35JD	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T28				Not Qualified	16384 bit
SN74AS871N	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	2	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A		NOT SPECIFIED	NOT SPECIFIED	NO		36.32 mm	16 ns
SN74ACT2152A-25JD	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T28				Not Qualified	16384 bit
SN74ACT2154A-25FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	16384 bit	4.5 V					NO		11.5062 mm	25 ns
SN74ACT2154-25FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND			125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		QUAD		S-PQCC-J28				Not Qualified	16384 bit
SN74ACT2153FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1024 words		5		11	CHIP CARRIER			1.27 mm	70 Cel	TOTEM POLE	1KX11	1K		0 Cel		QUAD	1	S-PQCC-J28	5.25 V	4.57 mm	11.5062 mm	Not Qualified	11264 bit	4.75 V					NO		11.5062 mm	22 ns
SN74ACT2153-28FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND				1024 words		5	5	12	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		1KX12	1K		0 Cel		QUAD		S-PQCC-J28				Not Qualified	12288 bit									28 ns
SN74AS870FN	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	TTL		J BEND	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LDCC28,.5SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		QUAD	2	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm	15 ns
SN74ACT2152-25JD	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T28				Not Qualified	16384 bit
SN74ACT2151FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1024 words		5		11	CHIP CARRIER			1.27 mm	70 Cel	TOTEM POLE	1KX11	1K		0 Cel		QUAD	1	S-PQCC-J28	5.25 V	4.57 mm	11.5062 mm	Not Qualified	11264 bit	4.75 V					NO		11.5062 mm	22 ns
SN74ACT2152-25N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T28				Not Qualified	16384 bit
SN74ALS870FN	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	TTL		J BEND	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LDCC28,.5SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		QUAD	2	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm
SN74ACT2152A-20N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		DUAL	1	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		36.32 mm	20 ns
SN74ACT2153-25N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1024 words		5	5	12	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		1KX12	1K		0 Cel		DUAL		R-PDIP-T28				Not Qualified	12288 bit									25 ns
SN74ACT2151N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		11	IN-LINE			2.54 mm	70 Cel	TOTEM POLE	1KX11	1K		0 Cel		DUAL	1	R-PDIP-T28	5.25 V	5.08 mm	15.24 mm	Not Qualified	11264 bit	4.75 V					NO		36.32 mm	22 ns
SN74ACT2154A-25FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm	25 ns
SN74ACT2153-28JD	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				1024 words		5	5	12	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		1KX12	1K		0 Cel		DUAL		R-XDIP-T28				Not Qualified	12288 bit									28 ns
SN74ALS871FN	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	TTL		J BEND	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LDCC28,.5SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		QUAD	2	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A		NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm
SN74ACT2152-25FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND			125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		QUAD		S-PQCC-J28				Not Qualified	16384 bit
SN74ACT2152A-25FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm	25 ns
SN74ACT2154-25JD	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T28				Not Qualified	16384 bit
SN74ACT2152A-20FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	16384 bit	4.5 V					NO		11.5062 mm	20 ns
SN74AS871FN	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	TTL		J BEND	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LDCC28,.5SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		QUAD	2	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A		NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm	16 ns
SN74ACT2154A-20FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm	20 ns
SN74ACT2152A-25FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28	5.5 V	4.57 mm	11.5062 mm	Not Qualified	16384 bit	4.5 V					NO		11.5062 mm	25 ns
SN74ACT2152A-25N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		DUAL	1	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		36.32 mm	25 ns
SN74ACT2154A-20N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		DUAL	1	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		36.32 mm	20 ns
SN74ACT2154-25N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T28				Not Qualified	16384 bit
SN74ACT2153-28N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1024 words		5	5	12	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		1KX12	1K		0 Cel		DUAL		R-PDIP-T28				Not Qualified	12288 bit									28 ns
SN74ACT2152A-20JD	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T28				Not Qualified	16384 bit
SN74ACT2154-35N	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T28				Not Qualified	16384 bit
SN74ACT2153-25FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND				1024 words		5	5	12	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		1KX12	1K		0 Cel		QUAD		S-PQCC-J28				Not Qualified	12288 bit									25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.