28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MK48S80X25	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	8192 words		5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.25 V	3.556 mm	7.518 mm	Not Qualified	65536 bit	4.75 V	TOTEM-POLE MATCH OUTPUT	e0			YES	.16 Amp	17.932 mm	25 ns
M68AF031AM70N6F	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN/TIN BISMUTH	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e6	NOT SPECIFIED	260		.000006 Amp	11.8 mm	70 ns
MK48Z58Y-70MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			50 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel			8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28				Not Qualified	65536 bit			e0				.003 Amp		70 ns
M68AF031AM55MS6E	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDSO-G28	5.5 V	2.79 mm	7.505 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	260		.000006 Amp	18.22 mm	55 ns
MK48H89N-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		9	IN-LINE				70 Cel		3-STATE	8KX9	8K	2 V	0 Cel		DUAL	1	R-PDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V					YES			25 ns
M68AF031AM70NS1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN/TIN BISMUTH	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e6	NOT SPECIFIED	260		.000006 Amp	11.8 mm	70 ns
IMS1695S-20M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		9	IN-LINE				125 Cel		3-STATE	8KX9	8K	2 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V					YES			20 ns
IMS1630LP-10Z	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp	34.29 mm	100 ns
M628032-12E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.556 mm	7.518 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.001 Amp	17.932 mm	12 ns
IMS1635E-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		25 ns
M68AW031AM70MS6U	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3.6 V	2.85 mm	8.407 mm	Not Qualified	262144 bit	2.7 V		e3				.000006 Amp	18.11 mm	70 ns
IMS1630S-70M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.017 Amp	35.56 mm	70 ns
M68AW031AL70MS1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	1.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G28	3.6 V	2.85 mm	8.407 mm	Not Qualified	262144 bit	2.7 V		e3				.000006 Amp	18.11 mm	70 ns
MK48Z58Y-70PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0				.003 Amp		70 ns
5962-8854501XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			64KX4	64K		-55 Cel		QUAD		R-CQCC-N28	5.5 V	2.03 mm	8.89 mm	Not Qualified	262144 bit	4.5 V							13.97 mm	35 ns
MK48Z30AB-10	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.002 Amp		100 ns
IMS1626S-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		25 ns
IMS1624N-70M	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		3-STATE	16KX4	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.019 Amp	13.97 mm	70 ns
M68AW031AL55MS6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	2.85 mm	8.407 mm	Not Qualified	262144 bit	2.7 V		e0				.000006 Amp	18.11 mm	55 ns
IMS1627P-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		20 ns
M68AF031AL55NS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.000006 Amp	11.8 mm	55 ns
5962-8552510XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel		DUAL		R-CDIP-T28	5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V							35.56 mm	55 ns
M68AF031AL70N6F	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN/TIN BISMUTH	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e6	NOT SPECIFIED	260		.000006 Amp	11.8 mm	70 ns
5962-8854503XA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			64KX4	64K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N28	5.5 V	3.048 mm	8.89 mm	Not Qualified	262144 bit	4.5 V		e0					13.97 mm	55 ns
M68AW031AL70N1U	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V		e0				.000006 Amp	11.8 mm	70 ns
MK48H99N-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		9	IN-LINE				70 Cel		3-STATE	8KX9	8K		0 Cel		DUAL	1	R-PDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V					YES			20 ns
5962-8952403YX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			64KX4	64K		-55 Cel		QUAD		R-CQCC-N28	5.5 V	2.03 mm	8.89 mm	Not Qualified	262144 bit	4.5 V							13.97 mm	45 ns
MK48H65N-70	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0				.00001 Amp		70 ns
M68AW031AL70N6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V		e0				.000006 Amp	11.8 mm	70 ns
MK48H64S-120	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	3.05 mm	8.4 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.0005 Amp	18.1 mm	120 ns
MK48S80X15/20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	8192 words		5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDSO-J28	5.25 V	3.556 mm	7.518 mm	Not Qualified	65536 bit	4.75 V	TOTEM-POLE MATCH OUTPUT	e0				.16 Amp	17.932 mm	20 ns
MK48Z08B-15	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0			YES	.003 Amp		150 ns
5962-8685913XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			16KX4	16K		-55 Cel		QUAD		R-XQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V							13.97 mm	55 ns
IMS1627S-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		15 ns
MK48S74X20/20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	8192 words		5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDSO-J28	5.25 V	3.556 mm	7.518 mm	Not Qualified	65536 bit	4.75 V	OPEN DRAIN MATCH OUTPUT	e0				.16 Amp	17.932 mm	20 ns
M68AF031AM70NS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.000006 Amp	11.8 mm	70 ns
MK6264US120	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28				Not Qualified	65536 bit			e0				.000002 Amp		120 ns
M68AW031AM70MS6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3.6 V	2.85 mm	8.407 mm	Not Qualified	262144 bit	2.7 V		e3				.000006 Amp	18.11 mm	70 ns
MK48256N-100	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28				Not Qualified	262144 bit			e0				.0005 Amp		100 ns
IMS1635P-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		25 ns
MK48S74X25	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	8192 words		5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.25 V	3.556 mm	7.518 mm	Not Qualified	65536 bit	4.75 V	OPEN-DRAIN MATCH OUTPUT; FLASH CLEAR	e0			YES	.16 Amp	17.932 mm	25 ns
IMS1626E-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		20 ns
M68AW031AL55N6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V		e0				.000006 Amp	11.8 mm	55 ns
IMS1626S-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		20 ns
M628008-10E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.556 mm	7.518 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.01 Amp	17.932 mm	10 ns
MK48Z30YB70	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION PERIOD; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e0			YES	.002 Amp		70 ns
MK48C02AN25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5		8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			2KX8	2K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.75 V		e0			YES	.001 Amp	37.085 mm	250 ns
MK48256LS-100	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28				Not Qualified	262144 bit			e0				.00002 Amp		100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.