28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-3829414MTA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883		FLAT	PARALLEL	ASYNCHRONOUS	110 mA	8192 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDFP-F28		5.5 V	2.921 mm	12.446 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.0003 Amp	18.288 mm	25 ns
5962-3829409MXX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.211 mm	55 ns
HM65256BP-10	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =50NS						35.6 mm	100 ns
5962-3829416MXX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V		e0					37.211 mm	19 ns
HM65256BLFP-20T	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	MOS			GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm	8.4 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =100NS						18.3 mm	200 ns
HM65256BFP-15	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm	8.4 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH						18.3 mm	150 ns
5962-8866202XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.02 Amp	37.211 mm	70 ns
HM65256BP-10T	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH						35.6 mm	100 ns
TTS92256N-25C-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.00012 Amp		25 ns
CDM6116BCJ/3	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	SQUARE		CERAMIC	YES		CMOS	MIL-STD-883 Class B (Modified)		NO LEAD	PARALLEL	ASYNCHRONOUS	65 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.45SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		S-XQCC-N28					Not Qualified	16384 bit			e0				.0001 Amp		100 ns
5962-8866206XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.211 mm	25 ns
TTS92256FK-45C-3	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0008 Amp		45 ns
HM65256BLFP-20	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm	8.4 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH						18.3 mm	200 ns
TTS92256F-25C-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0002 Amp		25 ns
5962-8866205XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0					37.211 mm	35 ns
UPB10484AB-7	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DFP	RECTANGULAR		CERAMIC	YES		ECL10K		-5.2 V	FLAT	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	SEPARATE		-5.2	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	70 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28					Not Qualified	16384 bit			e0						7 ns
HM65256AP-15	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V							35.6 mm	75 ns
TTS92256F-35M-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS			FLAT	PARALLEL	ASYNCHRONOUS	155 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.015 Amp		35 ns
TTS92256FK-85M-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0002 Amp		85 ns
5962-8855202UX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.1475 mm	70 ns
TTS92256T-45M-3	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.02 Amp		45 ns
TTS92256T-70C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.00012 Amp		70 ns
UPB10484D-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		ECL10K		-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	SEPARATE		-5.2	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	70 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	16384 bit			e0						15 ns
5962-3829407MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0		240	YES	.015 Amp	37.1475 mm	70 ns
HM65256BFP-15T	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	MOS			GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm	8.4 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =75NS						18.3 mm	150 ns
5962-01-270-0684	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel		DUAL		R-PDIP-T28					Not Qualified	65536 bit							.00001 Amp		150 ns
TTS92256FK-150M-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.002 Amp		150 ns
TTS92256T-35C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.00012 Amp		35 ns
5962-8866204XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.02 Amp	37.211 mm	45 ns
TTS92256N-19C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.00012 Amp		19 ns
TTS92256T-30M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.0002 Amp		30 ns
5962-8855203XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0					37.211 mm	55 ns
5962-8866202NA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.02 Amp	37.1475 mm	70 ns
TTS92256GK-20C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR		CERAMIC	YES		CMOS			NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.015 Amp		20 ns
5962-8855203UA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.0008 Amp	37.1475 mm	55 ns
5962-8866203NX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel		DUAL		R-CDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.1475 mm	55 ns
5962-8866204NX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V		e0					37.1475 mm	45 ns
TTS92256F-20C-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS			FLAT	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.00012 Amp		20 ns
TTS92256FK-30C-5	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS			FLAT	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.015 Amp		30 ns
TTS92256G-10M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.0002 Amp		100 ns
TTS92256T-45C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.00012 Amp		45 ns
TTS92256GK-35M-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		NO LEAD	PARALLEL	ASYNCHRONOUS	165 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.02 Amp		35 ns
TTS92256T-30C-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.015 Amp		30 ns
HS1-65758RH-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	100k Rad(Si)	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	262144 bit			e0				.00025 Amp		35 ns
TTS92256N-30C-4	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.02 Amp		30 ns
HM65256BSP-15	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =75NS						36 mm	150 ns
TTS92256N-30C-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS			FLAT	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.00012 Amp		30 ns
UPB100484B-15	Renesas Electronics	STANDARD SRAM	OTHER	28	DFP	RECTANGULAR		CERAMIC	YES		ECL100K		-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	SEPARATE		-4.5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28					Not Qualified	16384 bit			e0						15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.