28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CDM6264E2I	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.0001 Amp		200 ns
HM65256ASP-15	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V							36 mm	75 ns
TTS92256FK-55M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0002 Amp		55 ns
TTS92256FK-150M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.002 Amp		150 ns
HM65256ASP-12	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V							36 mm	60 ns
5962-3829407MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V		e0	20	240	YES	.015 Amp	37.211 mm	70 ns
TTS92256N-30M-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0002 Amp		30 ns
5962-3829409MZA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0		240	YES	.02 Amp	37.1475 mm	55 ns
HS9-65758RH-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	100k Rad(Si)	CERAMIC	YES		CMOS			FLAT	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28					Not Qualified	262144 bit			e0				.00025 Amp		35 ns
5962-3829414MTX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883		FLAT	PARALLEL	ASYNCHRONOUS		8192 words		5		8	FLATPACK				125 Cel		8KX8	8K		-55 Cel		DUAL		R-GDFP-F28		5.5 V			Not Qualified	65536 bit	4.5 V								25 ns
7MP564L45S	Renesas Electronics	SRAM MODULE	COMMERCIAL	28		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	400 mA	16384 words	SEPARATE	5	5	5	MICROELECTRONIC ASSEMBLY	SIP28,.1	SRAMs	2.54 mm	70 Cel	3-STATE	16KX5	16K	2 V	0 Cel	TIN LEAD	SINGLE		R-PSMA-T28		5.5 V			Not Qualified	81920 bit	4.5 V		e0				.0003 Amp		45 ns
HM5-8808B-9+	Renesas Electronics	SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	107 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel		DUAL		R-XDIP-T28						65536 bit							.000125 Amp		120 ns
TTS92256N-12M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.0002 Amp		120 ns
HM65256AP-20	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V							35.6 mm	100 ns
U62H64JK20L	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS			J BEND	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	65536 bit			e0						20 ns
5962-3829406MXX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				125 Cel		8KX8	8K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V			Qualified	65536 bit	4.5 V		e0						70 ns
TTS92256FK-55M-4	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.02 Amp		55 ns
5962-8866207XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V	4.34 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.02 Amp	35.56 mm	20 ns
TTS92256F-25C-6	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.02 Amp		25 ns
5962-8866201XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0					37.211 mm	100 ns
TTS92256FK-35M-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	165 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.02 Amp		35 ns
5962-3829409MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V		e0		240	YES	.02 Amp	37.211 mm	55 ns
TTS92256F-35C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS			FLAT	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.00012 Amp		35 ns
HM65256BLFP-15T	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	MOS			GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm	8.4 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =75NS						18.3 mm	150 ns
5962-3829412MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL		R-GDIP-T28	1	5.5 V			Qualified	65536 bit	4.5 V		e0		240		.0003 Amp		35 ns
TTS92256N-55C-4	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.015 Amp		55 ns
HM63021FP-28	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm	8.4 mm	Not Qualified	16384 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS						18.3 mm	20 ns
TTS92256FK-30C-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS			FLAT	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.015 Amp		30 ns
HM100504F-12	Renesas Electronics	STANDARD SRAM	OTHER	28	DFP	RECTANGULAR		CERAMIC, GLASS-SEALED	YES	1	ECL		-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS		65536 words				4	FLATPACK			.762 mm	85 Cel		64KX4	64K		0 Cel		DUAL		R-GDFP-F28			2.29 mm	12.92 mm	Not Qualified	262144 bit								13.6 mm	12 ns
TTS92256T-25C-5	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.015 Amp		25 ns
UPB100A484D-7	Renesas Electronics	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	ECL		-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE		-4.5	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-CDIP-T28					Not Qualified	16384 bit			e0						7 ns
5962-8855202XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0					37.211 mm	70 ns
HM65256BP-20T	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH						35.6 mm	200 ns
5962-3829414MZX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.1475 mm	25 ns
TTS92256T-20M-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.03 Amp		20 ns
HM65256BP-12T	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH						35.6 mm	120 ns
TTS92256N-120M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.002 Amp		120 ns
5962-3829417MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0		240	YES	.02 Amp	37.1475 mm	20 ns
TTS92256GKI-25C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR		CERAMIC	YES		CMOS			NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.00012 Amp		25 ns
5962-3829413MXX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				125 Cel		8KX8	8K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V			Qualified	65536 bit	4.5 V		e0						35 ns
UPB100484AD-5	Renesas Electronics	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR		CERAMIC	NO		ECL100K		-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	SEPARATE		-4.5	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	16384 bit			e0						5 ns
TTS92256N-55C-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.00012 Amp		55 ns
7M856S40C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	380 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V		e0				.06 Amp		40 ns
TTS92256T-45M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.0002 Amp		45 ns
5962-8855204UX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.1475 mm	45 ns
HM65256BFP-20	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm	8.4 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH						18.3 mm	200 ns
TTS92256GKI-25C-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		NO LEAD	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.0002 Amp		25 ns
TTS92256FK-70M-3	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR		CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0002 Amp		70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.