28 SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

TTS92256FK-85M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

DFP

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

125 mA

32768 words

COMMON

5

5

8

FLATPACK

FL28,.5

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

DUAL

R-XDFP-F28

Not Qualified

262144 bit

.0002 Amp

85 ns

IDT8M856L55C

Renesas Electronics

SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

55 ns

TTS92256T-25C-3

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.015 Amp

25 ns

5962-3829413MZA

Renesas Electronics

OTHER SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

130 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-CDIP-T28

1

5.5 V

5.08 mm

7.62 mm

Qualified

65536 bit

4.5 V

e0

240

YES

.02 Amp

37.1475 mm

35 ns

TTS92256GK-25M-1

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

QUAD

R-XQCC-N28

Not Qualified

262144 bit

.015 Amp

25 ns

TTS92256GK-30M-2

Renesas Electronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

180 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

QUAD

R-XQCC-N28

Not Qualified

262144 bit

.02 Amp

30 ns

HM65256BFP-12

Renesas Electronics

PSEUDO STATIC RAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDSO-G28

5.5 V

3 mm

8.4 mm

Not Qualified

262144 bit

4.5 V

CE/AUTO/SELF REFRESH

18.3 mm

120 ns

TTS92256FK-45M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

DFP

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

135 mA

32768 words

COMMON

5

5

8

FLATPACK

FL28,.5

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

DUAL

R-XDFP-F28

Not Qualified

262144 bit

.0002 Amp

45 ns

TTS92256T-20M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.02 Amp

25 ns

TTS92256T-15M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

125 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.0002 Amp

150 ns

TTS92256GK-35M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

QUAD

R-XQCC-N28

Not Qualified

262144 bit

.0002 Amp

35 ns

5962-3829407MXX

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE

2.54 mm

125 Cel

8KX8

8K

-55 Cel

DUAL

R-GDIP-T28

5.5 V

5.08 mm

15.24 mm

Qualified

65536 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

37.211 mm

70 ns

TTS92256N-70C-3

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

140 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.015 Amp

70 ns

TTS92256FK-55M-2

Renesas Electronics

STANDARD SRAM

MILITARY

28

DFP

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

125 mA

32768 words

COMMON

5

5

8

FLATPACK

FL28,.4

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

DUAL

R-XDFP-F28

Not Qualified

262144 bit

.0002 Amp

55 ns

5962-3829414MXX

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE

2.54 mm

125 Cel

8KX8

8K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.08 mm

15.24 mm

Qualified

65536 bit

4.5 V

e0

37.211 mm

25 ns

7M856S50C

Renesas Electronics

SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

380 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

TIN LEAD

DUAL

R-CDIP-T28

5.5 V

Not Qualified

262144 bit

4.5 V

e0

.06 Amp

50 ns

UPB100484D-10

Renesas Electronics

STANDARD SRAM

OTHER

28

DIP

RECTANGULAR

CERAMIC

NO

ECL100K

-4.5 V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

260 mA

4096 words

SEPARATE

-4.5

4

IN-LINE

DIP28,.4

SRAMs

2.54 mm

85 Cel

OPEN-EMITTER

4KX4

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

16384 bit

e0

10 ns

UPB100A484D-5

Renesas Electronics

STANDARD SRAM

OTHER

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

ECL

-4.5 V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

SEPARATE

-4.5

4

IN-LINE

DIP28,.4

SRAMs

2.54 mm

85 Cel

OPEN-EMITTER

4KX4

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-CDIP-T28

Not Qualified

16384 bit

e0

5 ns

TTS92256GK-55M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

QUAD

R-XQCC-N28

Not Qualified

262144 bit

.02 Amp

55 ns

5962-8855206UA

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

155 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

TIN LEAD

DUAL

1

R-GDIP-T28

1

5.5 V

5.08 mm

7.62 mm

Qualified

262144 bit

4.5 V

e0

240

YES

.0008 Amp

37.1475 mm

25 ns

TTS92256T-85M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

125 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.0002 Amp

85 ns

5962-3829415MXA

Renesas Electronics

OTHER SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

135 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-GDIP-T28

1

5.5 V

5.08 mm

15.24 mm

Qualified

65536 bit

4.5 V

e0

240

YES

.02 Amp

37.211 mm

25 ns

UPB100484AB-7

Renesas Electronics

STANDARD SRAM

OTHER

28

DFP

RECTANGULAR

CERAMIC

YES

ECL100K

-4.5 V

FLAT

PARALLEL

ASYNCHRONOUS

240 mA

4096 words

SEPARATE

-4.5

4

FLATPACK

FL28,.4

SRAMs

1.27 mm

85 Cel

OPEN-EMITTER

4KX4

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDFP-F28

Not Qualified

16384 bit

e0

7 ns

5962-3829416MXA

Renesas Electronics

OTHER SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

125 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

2 V

-55 Cel

TIN LEAD

DUAL

1

R-GDIP-T28

1

5.5 V

5.08 mm

15.24 mm

Qualified

65536 bit

4.5 V

e0

240

YES

.0003 Amp

37.211 mm

20 ns

HM63021P-28

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

2.54 mm

70 Cel

2KX8

2K

0 Cel

DUAL

R-PDIP-T28

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

ASYNCHRONOUS VERSION AVAILABLE; TTL COMPATIBLE

36 mm

20 ns

5962-01-399-5376

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

DUAL

R-PDSO-G28

Not Qualified

262144 bit

.00002 Amp

100 ns

TTS92256GI-15M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

125 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

QUAD

R-XQCC-N28

Not Qualified

262144 bit

.0002 Amp

150 ns

TTS92256N-20C-3

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

135 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.00012 Amp

20 ns

HM1-65642B-8

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

48 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

2 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

65536 bit

.000075 Amp

150 ns

TTS92256FK-70M-4

Renesas Electronics

STANDARD SRAM

MILITARY

28

DFP

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

FLATPACK

FL28,.5

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

R-XDFP-F28

Not Qualified

262144 bit

.02 Amp

70 ns

TTS92256FK-45M-2

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

DFP

RECTANGULAR

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

140 mA

32768 words

COMMON

5

5

8

FLATPACK

FL28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

DUAL

R-XDFP-F28

Not Qualified

262144 bit

.015 Amp

45 ns

TTS92256GK-70M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

125 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

QUAD

R-XQCC-N28

Not Qualified

262144 bit

.0002 Amp

70 ns

TTS92256GK-85M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

125 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

QUAD

R-XQCC-N28

Not Qualified

262144 bit

.0002 Amp

85 ns

5962-8866207XX

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

2.54 mm

125 Cel

32KX8

32K

-55 Cel

TIN LEAD

DUAL

R-CDIP-T28

5.5 V

5.8928 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY

e0

20 ns

5962-01-278-7951

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

DUAL

R-PDIP-T28

Not Qualified

65536 bit

.00005 Amp

120 ns

TTS92256GK-45C-2

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

140 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

QUAD

R-XQCC-N28

Not Qualified

262144 bit

.015 Amp

45 ns

HM65256BLSP-10

Renesas Electronics

PSEUDO STATIC RAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

2.54 mm

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDIP-T28

5.5 V

5.08 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

ACCESS TIME IN STATIC COLUMN MODE =50NS

36 mm

100 ns

TTS92256N-45M-2

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

135 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.0002 Amp

45 ns

5962-8866205XA

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-GDIP-T28

1

5.5 V

5.08 mm

15.24 mm

Qualified

262144 bit

4.5 V

e0

240

YES

.02 Amp

37.211 mm

35 ns

TTS92256F-35M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

DFP

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

FLATPACK

FL28,.4

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

DUAL

R-XDFP-F28

Not Qualified

262144 bit

.0002 Amp

35 ns

HM65256BP-15

Renesas Electronics

PSEUDO STATIC RAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

2.54 mm

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDIP-T28

5.5 V

5.7 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

ACCESS TIME IN STATIC COLUMN MODE =75NS

35.6 mm

150 ns

HM65256BLP-20T

Renesas Electronics

PSEUDO STATIC RAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

2.54 mm

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDIP-T28

5.5 V

5.7 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

CE/AUTO/SELF REFRESH

35.6 mm

200 ns

UPB10A484D-7

Renesas Electronics

STANDARD SRAM

COMMERCIAL EXTENDED

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

ECL

-5.2 V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

320 mA

4096 words

SEPARATE

-5.2

4

IN-LINE

DIP28,.4

SRAMs

2.54 mm

75 Cel

OPEN-EMITTER

4KX4

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-CDIP-T28

Not Qualified

16384 bit

e0

7 ns

5962-01-356-8385

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

45 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

DUAL

R-PDIP-T28

Not Qualified

262144 bit

.00002 Amp

85 ns

5962-8855201XX

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

2.54 mm

125 Cel

32KX8

32K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.08 mm

15.24 mm

Qualified

262144 bit

4.5 V

e0

37.211 mm

100 ns

TTS92256FK-35C-8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

DFP

RECTANGULAR

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

155 mA

32768 words

COMMON

5

5

8

FLATPACK

FL28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

DUAL

R-XDFP-F28

Not Qualified

262144 bit

.015 Amp

35 ns

TTS92256N-30M-1

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

125 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

2 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.0005 Amp

30 ns

TTS92256N-30M-3

Renesas Electronics

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.02 Amp

30 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.