28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
71256S35PK	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.4	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28					Not Qualified	262144 bit		e0				.015 Amp		35 ns
71V256SA15PZG	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G28	3	3.6 V			Not Qualified	262144 bit	3 V	e3	NOT SPECIFIED	260		.002 Amp		15 ns
IDT71256SA20PZGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G28	3	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V	e3	40	260	YES	.015 Amp	11.8 mm	20 ns
71V256SA15YG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J28	3	3.6 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	3 V	e3	40	260		.002 Amp	17.9324 mm	15 ns
IDT71256S45DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0			YES	.02 Amp	37.211 mm	45 ns
IDT7164L70TD	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	e0			YES		37.1475 mm	70 ns
UPD43256BGW-A85-9JL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON		3.3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit		e0						85 ns
7164L20TPGB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.572 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	e3					34.671 mm	19 ns
IDT71B79S12TDB	Renesas Electronics	CACHE TAG SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		9	IN-LINE			2.54 mm	125 Cel		3-STATE	8KX9	8K		-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	73728 bit	4.5 V	e0			YES		37.211 mm	12 ns
UPD43256BC-85L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0				.00005 Amp		85 ns
IDT7164L45TDB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	e0			YES	.0002 Amp	37.1475 mm	45 ns
UPD43256AGU-12L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit		e0				.00005 Amp		120 ns
IDT71256SA25PZG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V	e3	40	260		.015 Amp	11.8 mm	25 ns
M5M5256DFP-70LL#BM	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	2.4 mm	8.4 mm	Not Qualified	262144 bit	4.5 V						17.5 mm	70 ns
IDT7164L120L28B8	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	QUAD	1	S-CQCC-N28		5.5 V	2.54 mm	11.4554 mm	Not Qualified	65536 bit	4.5 V	e0			YES		11.4554 mm	120 ns
7164S55YGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	315 mA	8192 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V	e3	30	260			17.9324 mm	55 ns
7164S25DGB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	330 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e3	30	260			37.211 mm	25 ns
HM621100AJP-25	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	4.5 V	0 Cel		DUAL		R-PDSO-J28		5.5 V			Not Qualified	1048576 bit	4.5 V					.002 Amp		25 ns
UPD4364CX-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V	e0				.002 Amp		200 ns
UPD4364CX-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V	e0				.002 Amp		150 ns
UPD43256BGW-B12-9JL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46,32	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V	e6					11.8 mm	120 ns
UPD43256BGW-A12L-9JL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON		3.3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit		e0				.000007 Amp		120 ns
UPD4364G-20LL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	35 mA	8192 words	COMMON	5	5	8	FLATPACK	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDFP-F28		5.5 V			Not Qualified	65536 bit	4.5 V	e0				.00002 Amp		200 ns
7164L45TPGB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.572 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	e3					34.671 mm	45 ns
IDT71B79S15TD	Renesas Electronics	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	BICMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		9	IN-LINE			2.54 mm	70 Cel		3-STATE	8KX9	8K		0 Cel	TIN LEAD	DUAL	1	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	73728 bit	4.5 V	e0			YES		37.211 mm	15 ns
7164L70DGB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	280 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e3	30	260			37.211 mm	70 ns
IDT7164L35DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e0			YES	.0002 Amp	37.211 mm	35 ns
R1LP5256ESA-7SR#S0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN COPPER	DUAL		R-PDSO-G28	2	5.5 V			Not Qualified	262144 bit	4.5 V	e2	20	260		.000002 Amp		70 ns
7164S20DG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words		5		8	IN-LINE			2.54 mm	70 Cel			8KX8	8K		0 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	15.24 mm		65536 bit	4.5 V	e3	30	260			37.211 mm	19 ns
UPD43256AC-85	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit		e0				.002 Amp		85 ns
IDT71256L25YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel			32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V	e3					17.9324 mm	25 ns
UPD43257BCZ-70L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit		e0						70 ns
7164L20YGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	8192 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V	e3	30	260			17.9324 mm	19 ns
UPD43256AC-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit		e0				.002 Amp		150 ns
7164S20DGB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e3	30	260			37.211 mm	19 ns
UPD43256BGW-A85-9KL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON		3.3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit		e0						85 ns
UPD43256AC(F)-12L	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit		e0				.0001 Amp		120 ns
UPD4364G-20L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	35 mA	8192 words	COMMON	5	5	8	FLATPACK	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDFP-F28		5.5 V			Not Qualified	65536 bit	4.5 V	e0				.00005 Amp		200 ns
UPD43256AC-12X	Renesas Electronics	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V	e0				.0001 Amp		120 ns
IDT7164L55DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e0			YES	.0002 Amp	37.211 mm	55 ns
R1LP5256ESP-5SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	TIN COPPER	DUAL		R-PDSO-G28	3	5.5 V			Not Qualified	262144 bit	4.5 V	e2	20	260		.000002 Amp		55 ns
7164S20PI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	8KX8	8K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28	1				Not Qualified	65536 bit		e0	20	240		.015 Amp		20 ns
UPD43253BCR-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit		e0				.002 Amp		20 ns
UPD43256BGW-A10-9JL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46,32	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V	e6					11.8 mm	100 ns
UPD43256BCZ-85L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit		e0						85 ns
UPD43256ACX-15L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit		e0				.0001 Amp		150 ns
UPD43256BGU-70LL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	3 mm	8.4 mm	Not Qualified	262144 bit	4.5 V	e6					18 mm	70 ns
M5M5256DFP-70XL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDSO-G28		5.5 V	2.4 mm	8.4 mm	Not Qualified	262144 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			17.5 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.