28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-3829415MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0		240	YES	.02 Amp	37.1475 mm	25 ns
5962-8552512XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel		DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.211 mm	85 ns
TTS92256FK-35M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel		3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0002 Amp		35 ns
TTS92256FK-35C-7	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS			FLAT	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.00012 Amp		35 ns
TTS92256T-35C-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	155 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.015 Amp		35 ns
5962-3829411MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V		e0		240	YES	.02 Amp	37.211 mm	45 ns
TTS92256T-2C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.00012 Amp		25 ns
5962-8866204XX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel			32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0					37.211 mm	45 ns
HM65256BLP-20	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel			32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =100NS						35.6 mm	200 ns
UPB10476LLDH-6	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		ECL10K		-5.2 V	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	350 mA	1024 words	SEPARATE		-5.2	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	70 Cel		OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	4096 bit			e0						6 ns
5962-8855201UX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel			32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V		e0					37.1475 mm	100 ns
UPB100484AB-5	Renesas Electronics	STANDARD SRAM	OTHER	28	DFP	RECTANGULAR	CERAMIC	YES		ECL100K		-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	SEPARATE		-4.5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	85 Cel		OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28					Not Qualified	16384 bit			e0						5 ns
TTS92256GK-45C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS			NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.00012 Amp		45 ns
HM65256BP-20	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel			32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =100NS						35.6 mm	200 ns
5962-3829407MZX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0					37.1475 mm	70 ns
UPB10A484D-5	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL		-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	SEPARATE		-5.2	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	75 Cel		OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-CDIP-T28					Not Qualified	16384 bit			e0						5 ns
HM1-65642/883	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28		5.5 V	5.92 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0						150 ns
5962-8866202NX	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel			32KX8	32K		-55 Cel		DUAL		R-CDIP-T28		5.5 V	5.08 mm	7.62 mm	Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			37.1475 mm	70 ns
TTS92256FK-100M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel		3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.02 Amp		100 ns
5962-01-392-4089	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDIP-T28					Not Qualified	262144 bit							.00005 Amp		100 ns
TTS92256N-15M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.0002 Amp		150 ns
TTS92256GK-30M-1	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B		NO LEAD	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		3-STATE	32KX8	32K	2 V	-55 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.0002 Amp		30 ns
HM5-8808AB-9+	Renesas Electronics	SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	107 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	8KX8	8K	2 V	-40 Cel		DUAL		R-XDIP-T28						65536 bit							.000125 Amp		120 ns
TTS92256N-30C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.00012 Amp		30 ns
5962-3829408MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0		240	YES	.0003 Amp	37.1475 mm	55 ns
TTS92256FK-30C-4	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.5	SRAMs	1.27 mm	125 Cel		3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.02 Amp		30 ns
TTS92256GK-30C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS			NO LEAD	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.00012 Amp		30 ns
HM9264BLFP-10L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel		DUAL		R-PDSO-G28					Not Qualified	65536 bit							.000025 Amp		100 ns
TTS92256FK-30C-2	Renesas Electronics	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel		3-STATE	32KX8	32K	2 V	-55 Cel		DUAL		R-XDFP-F28					Not Qualified	262144 bit							.0002 Amp		30 ns
IDT61298TTSA15Y	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel			64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e0					17.9324 mm	15 ns
7164L25TDG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	8192 words		5		8	IN-LINE			2.54 mm	70 Cel			8KX8	8K		0 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	7.62 mm		65536 bit	4.5 V		e3	30	260			37.1475 mm	25 ns
UPD43256BCZ-10X	Renesas Electronics	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V		e0				.0001 Amp		100 ns
7164L55YGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B		J BEND	PARALLEL	ASYNCHRONOUS	295 mA	8192 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	30	260			17.9324 mm	55 ns
7164L25TPG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5		8	IN-LINE				70 Cel			8KX8	8K		0 Cel		DUAL		R-PDIP-T28		5.5 V				65536 bit	4.5 V								25 ns
7164LL15Y	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS			J BEND	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel		DUAL		R-PDSO-J28					Not Qualified	65536 bit							.00006 Amp		15 ns
UPD43256BGW-70L-9KL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE, THIN PROFILE			.55 mm	70 Cel			32KX8	32K		0 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e6					11.8 mm	70 ns
7164S100TPGB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.572 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e3					34.671 mm	100 ns
71V256SA20PZG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	70 Cel			32KX8	32K		0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G28	3	3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e3	NOT SPECIFIED	260			11.8 mm	20 ns
71256SA15PZGI	Renesas Electronics	STANDARD SRAM		28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		.55 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G28	3	5.5 V	1.2 mm	8 mm		262144 bit	4.5 V		e3	40	260	YES	.015 Amp	11.8 mm	15 ns
71256L100TDB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5		8	IN-LINE	DIP28,.3		2.54 mm	125 Cel			32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm		262144 bit	4.5 V		e0		240	YES	.0015 Amp	37.1475 mm	100 ns
IDT71256SA25YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	25 ns
71256L100DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5		8	IN-LINE	DIP28,.6		2.54 mm	125 Cel			32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28	1	5.5 V	5.08 mm	15.24 mm		262144 bit	4.5 V		e0		240	YES	.0015 Amp	37.211 mm	100 ns
UPD4364G-10LL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			FLAT	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	FLATPACK	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDFP-F28		5.5 V			Not Qualified	65536 bit	4.5 V		e0				.00002 Amp		100 ns
IDT71256SA12YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	12 ns
7164L55TDGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	295 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e3	30	260			37.1475 mm	55 ns
71256SA20TPGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	85 Cel			32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.572 mm	7.62 mm		262144 bit	4.5 V		e3					34.671 mm	20 ns
IDT7164L45DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.0002 Amp	37.211 mm	45 ns
UPD43256BGW-B12X-9KL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-25 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V		e6					11.8 mm	120 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.