28 SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7164L85DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28	1	5.5 V			Not Qualified	65536 bit	4.5 V	e0		240		.0002 Amp		85 ns
71256S70DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5		8	IN-LINE	DIP28,.6		2.54 mm	125 Cel			32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28	1	5.5 V	5.08 mm	15.24 mm		262144 bit	4.5 V	e0		240	YES	.02 Amp	37.211 mm	70 ns
UPD43256BGW-70X-9KL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-25 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V	e6					11.8 mm	70 ns
UPD43256AC(F)-15	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit		e0				.002 Amp		150 ns
R1LP5256ESA-5SR	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN COPPER	DUAL		R-PDSO-G28	2	5.5 V			Not Qualified	262144 bit	4.5 V	e2	20	260		.000002 Amp		55 ns
IDT7164S30PE8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	3	5.5 V	3.048 mm	8.763 mm	Not Qualified	65536 bit	4.5 V	e0	30	225	YES		18.3642 mm	30 ns
UPD431001LE-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	5	5	1	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	1048576 bit		e0				.002 Amp		20 ns
IDT7164L25DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e0			YES	.0002 Amp	37.211 mm	25 ns
7164S20YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	8KX8	8K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V	e3	40	260		.015 Amp	17.9324 mm	19 ns
IDT7164L30L28B8	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	QUAD	1	S-CQCC-N28		5.5 V	2.54 mm	11.43 mm	Not Qualified	65536 bit	4.5 V	e0			YES		11.43 mm	29 ns
7164S85DGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e3	30	260			37.211 mm	85 ns
IDT71256S70TDB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	e0			YES	.02 Amp	37.1475 mm	70 ns
UPD43256BGW-B15-9KL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46,32	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V	e6					11.8 mm	150 ns
UPD43256G-10	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28		5.5 V			Not Qualified	262144 bit	4.5 V	e0				.002 Amp		100 ns
7164L70DGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	280 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e3	30	260			37.211 mm	70 ns
IDT71V256SA15YGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		3-STATE	32KX8	32K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-J28		3.6 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	3 V	e3			YES		17.9324 mm	15 ns
UPD43256BGW-70L-9JL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE, THIN PROFILE			.55 mm	70 Cel			32KX8	32K		0 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V	e6					11.8 mm	70 ns
IDT71256L100DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0			YES	.0005 Amp	37.211 mm	100 ns
7164S55TPGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5		8	IN-LINE				125 Cel			8KX8	8K		-55 Cel		DUAL		R-PDIP-T28		5.5 V				65536 bit	4.5 V							55 ns
7164S55DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28	1	5.5 V			Not Qualified	65536 bit	4.5 V	e0		240		.02 Amp		55 ns
UPD43256BGW-B12-9KL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit		e0						120 ns
71256L45TDB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5		8	IN-LINE	DIP28,.3		2.54 mm	125 Cel			32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm		262144 bit	4.5 V	e0		240	YES	.0015 Amp	37.1475 mm	45 ns
IDT71256SA25PZG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G28	3	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V	e3	40	260	YES	.015 Amp	11.8 mm	25 ns
7164L20TPG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.572 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	e3				.00006 Amp	34.671 mm	19 ns
7164S70TDGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	310 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	e3	30	260			37.1475 mm	70 ns
UPD43256AGU-12LL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit		e0				.00002 Amp		120 ns
71256L25YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34		1.27 mm	70 Cel			32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm		262144 bit	4.5 V	e3	40	260	YES	.0006 Amp	17.9324 mm	25 ns
7164L35DGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	295 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e3	30	260			37.211 mm	35 ns
UPD43256AC-12LL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V	e0				.00002 Amp		120 ns
7164L20DGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words		5		8	IN-LINE			2.54 mm	85 Cel			8KX8	8K		-40 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	15.24 mm		65536 bit	4.5 V	e3	30	260			37.211 mm	19 ns
R1LP5256ESA-5SI#B1	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28	3	5.5 V				262144 bit	4.5 V							55 ns
IDT7164S100DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e0			YES	.0002 Amp	37.211 mm	100 ns
7164L100DGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e3	30	260			37.211 mm	100 ns
IDT71256S55DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0			YES	.02 Amp	37.211 mm	55 ns
IDT7164L20YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	8KX8	8K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V	e3	40	260		.00006 Amp	17.9324 mm	19 ns
7164L20YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V	e3	40	260		.00006 Amp	17.9324 mm	19 ns
UPD43256BGW-A10X-9JL-A	Renesas Electronics	STANDARD SRAM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3.3	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V	e6					11.8 mm	100 ns
UPD4364C-15L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V	e0				.00005 Amp		150 ns
71V256SA12YG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J28	3	3.6 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	3 V	e3	40	260		.002 Amp	17.9324 mm	12 ns
UPD43256BCZ-85	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0				.002 Amp		85 ns
UPD43258ACR-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit		e0				.002 Amp		25 ns
IDT71256L35DB	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0			YES	.0005 Amp	37.211 mm	35 ns
7164L20DG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5		8	IN-LINE			2.54 mm	70 Cel			8KX8	8K		0 Cel	Matte Tin (Sn)	DUAL		R-CDIP-T28		5.5 V	5.08 mm	15.24 mm		65536 bit	4.5 V	e3	30	260			37.211 mm	19 ns
UPD43256G-10L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28		5.5 V			Not Qualified	262144 bit	4.5 V	e0				.00005 Amp		100 ns
7164S85TPGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5		8	IN-LINE				125 Cel			8KX8	8K		-55 Cel		DUAL		R-PDIP-T28		5.5 V				65536 bit	4.5 V							85 ns
UPD4369CR-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	9	IN-LINE	DIP28,.4	SRAMs	2.54 mm	70 Cel		3-STATE	8KX9	8K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V			Not Qualified	73728 bit	4.5 V	e0				.002 Amp		15 ns
UPD43256BGU-55LL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3 mm	8.4 mm	Not Qualified	262144 bit	4.5 V	e0				.00002 Amp		55 ns
R1LP5256ESP-7SR#S0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN COPPER	DUAL		R-PDSO-G28	2	5.5 V			Not Qualified	262144 bit	4.5 V	e2	20	260		.000002 Amp		70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.