32 SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1250AB-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION	e3			.0006 Amp		70 ns
DS1249ABP	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	70 Cel		256KX8	256K		0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.25 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0				53.085 mm	70 ns
DS1250AB-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL	R-XDMA-N32		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1249Y	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	70 Cel		256KX8	256K		0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0				53.085 mm	70 ns
DS1250AB-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION	e3			.0006 Amp		70 ns
DS1250AB-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION	e3			.0006 Amp		100 ns
DS1245AB-85+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-T32	1	5.25 V			Not Qualified	1048576 bit	4.75 V		e3			.0006 Amp		85 ns
DS1245AB-85-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL	R-XDMA-T32		5.25 V			Not Qualified	1048576 bit	4.75 V		e0			.005 Amp		85 ns
DS1245Y-120IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-T32		5.5 V			Not Qualified	1048576 bit	4.5 V		e3			.0006 Amp		120 ns
DS1250Y	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL	R-XDMA-N32		5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1245W-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32		3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e3			.00025 Amp		150 ns
DS1245W-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL	R-XDMA-N32					Not Qualified	1048576 bit		10 YEARS OF DATA RETENTION PERIOD	e0					150 ns
DS1250AB	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL	R-XDMA-N32		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1250W	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL	R-XDMA-N32					Not Qualified	4194304 bit		10 YEARS OF DATA RETENTION PERIOD	e0					150 ns
DS1249Y-70IND#	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	85 Cel		256KX8	256K		-40 Cel		DUAL	R-XDIP-P32		5.5 V	10.922 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	10 YEAR DATA RETENTION		NOT SPECIFIED	NOT SPECIFIED		43.053 mm	70 ns
DS1245AB-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDIP-P32		5.25 V	10.922 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0006 Amp	43.053 mm	70 ns
DS1249YP	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	70 Cel		256KX8	256K		0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0				53.085 mm	70 ns
DS1250W-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32		3.6 V			Not Qualified	4194304 bit	3 V		e3			.00025 Amp		100 ns
DS1249AB	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	70 Cel		256KX8	256K		0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.25 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0				53.085 mm	70 ns
DS1250Y-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL	R-XDMA-N32		5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1249YP-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	85 Cel		256KX8	256K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0				53.085 mm	70 ns
DS1249Y-85IND#	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	85 Cel		256KX8	256K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-T32		5.5 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	DATA RETENTION > 10 YEARS	e3				53.085 mm	85 ns
DS1250Y-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32		5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e3			.0006 Amp		70 ns
DS1245W-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32		3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e3			.00025 Amp		100 ns
N02L083WC2AT2-55I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	18.4 mm	55 ns
N02L83W2AN5IT	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL	R-PDSO-G32	1	3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V					.00001 Amp	11.8 mm	70 ns
N02M0818L1AN-85I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		1.8		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			.5 mm	85 Cel		256KX8	256K		-40 Cel		DUAL	R-PDSO-G32		2.3 V	1.25 mm	8 mm	Not Qualified	2097152 bit	1.7 V						11.8 mm	85 ns
LC35V1000BTS-70U	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit								70 ns
N02L83W2AN25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V					.00001 Amp	11.8 mm	70 ns
N01L083WC2AN2-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	1048576 bit	2.3 V			40	260	.00001 Amp	11.8 mm	70 ns
N01L083WC2AT-55I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	1048576 bit	2.3 V		e0			.00001 Amp	18.4 mm	55 ns
N02L083WC2AN-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V		e0			.00001 Amp	11.8 mm	70 ns
N01L83W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	1048576 bit	2.3 V					.00001 Amp	18.4 mm	70 ns
N02L083WC2AT2-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	18.4 mm	70 ns
N02L083WC2AT-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V		e0			.00001 Amp	18.4 mm	70 ns
N01L83W2AN5I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel		DUAL	R-PDSO-G32	1	3.6 V	1.25 mm	8 mm	Not Qualified	1048576 bit	2.3 V					.00001 Amp	11.8 mm	70 ns
N02L83W2AT25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V					.00001 Amp	18.4 mm	70 ns
LC35V1000BM-70U	Onsemi	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit								70 ns
N01L083WC2AT-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	1048576 bit	2.3 V		e0			.00001 Amp	18.4 mm	70 ns
LC361000AMLL-70X	Onsemi	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-25 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit						.000024 Amp		70 ns
N02L83W2AT5I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL	R-PDSO-G32	1	3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V					.00001 Amp	18.4 mm	70 ns
N02L83W2AN25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V					.00001 Amp	11.8 mm	70 ns
N01L83W2AT5I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel		DUAL	R-PDSO-G32	1	3.6 V	1.25 mm	8 mm	Not Qualified	1048576 bit	2.3 V					.00001 Amp	18.4 mm	70 ns
N02L083WC2AT-55I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V		e0			.00001 Amp	18.4 mm	55 ns
LC361000ATLL-70X	Onsemi	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-25 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit						.000024 Amp		70 ns
N01L83W2AT25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	1048576 bit	2.3 V					.00001 Amp	18.4 mm	70 ns
N02L83W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V					.00001 Amp	18.4 mm	70 ns
N02L083WC2AN2-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	2097152 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	11.8 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.