32 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
STK14CA8-NF45I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	131072 words		3	3	8	SMALL OUTLINE	SOP32,.4		SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm	7.505 mm	Not Qualified	1048576 bit	2.7 V		e3	20	260		.003 Amp	20.726 mm	45 ns
CY62148BLL-55ZC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.00002 Amp	20.95 mm	55 ns
M48Z128Y-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3		225	YES	.004 Amp	42.8 mm	70 ns
K6T1008C2E-DB70	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDIP-T32	1	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							41.91 mm	70 ns
K6X4008C1F-GF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0		240		.000012 Amp	20.47 mm	55 ns
CY7C1019BV33-15ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.63 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.97 V							20.95 mm	15 ns
CY7C1019CV33-10ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	3.63 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.97 V		e3	20	260		.005 Amp	20.95 mm	10 ns
K6X1008T2D-BF70	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON		3/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32	3				Not Qualified	1048576 bit					260				70 ns
CY62128ELL-55ZAXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.00003 Amp	11.8 mm	55 ns
K6X1008C2D-GF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0				.00001 Amp	20.47 mm	55 ns
TC551001BFL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	70 ns
CY62148ELL-55SXA	Rochester Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm	11.303 mm	Not Qualified	4194304 bit	4.5 V		e4	20	260		.000007 Amp	20.4465 mm	55 ns
K6R1008C1D-KI10	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	75 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e1	40	260		.005 Amp	20.95 mm	10 ns
K6T1008C2C-DB70	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							41.91 mm	70 ns
K6X4008C1F-VF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.000012 Amp	20.95 mm	55 ns
KM681000BLG-7	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	20.47 mm	70 ns
TC551001APL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		42 mm	70 ns
TC551001APL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		42 mm	70 ns
TC551001BPL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							42 mm	70 ns
CY62128BLL-70ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	70 ns
CY62148DV30LL-70SXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	2.997 mm	11.303 mm	Not Qualified	4194304 bit	2.2 V		e4					20.4465 mm	70 ns
CY62148EV30LL-55SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G32	3	3.6 V	2.997 mm	11.303 mm	Not Qualified	4194304 bit	2.2 V		e4	20	260	YES	.000007 Amp	20.4465 mm	55 ns
CY62148VLL-70ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	2/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	TTL COMPATIBLE INPUTS/OUTPUTS, LOW STANDBY POWER	e0				.0000055 Amp	20.95 mm	70 ns
CY7C1019B-15VCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-J32	2	5.5 V	3.7592 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0					20.955 mm	15 ns
CY7C1019CV33-8VC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J32	2	3.63 V	3.7592 mm	10.16 mm	Not Qualified	1048576 bit	2.97 V		e0				.005 Amp	20.955 mm	8 ns
CY7C109B-15VXC	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.44			1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-J32		5.5 V	3.7592 mm	10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	15 ns
CY7C109B-35VC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32		5.5 V	3.7592 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.01 Amp	20.955 mm	35 ns
K6T1008C2E-DL70	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			41.91 mm	70 ns
K6T4008C1B-GF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0					20.47 mm	55 ns
K6T4008C1B-VB70	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0					20.95 mm	70 ns
K6T4008C1C-GB55	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0					20.47 mm	55 ns
K6X1008C2D-BF70	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32	3				Not Qualified	1048576 bit					260		.00001 Amp		70 ns
K6X1008C2D-TF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0		240		.00001 Amp	18.4 mm	55 ns
K6X1008T2D-TF70	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	1	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0	40	260			18.4 mm	70 ns
K6X4008C1F-DB55	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDIP-T32					Not Qualified	4194304 bit							.000012 Amp		55 ns
KM681000BLG-7L	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00001 Amp	20.47 mm	70 ns
KM681000BLGI-7	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	20.47 mm	70 ns
KM681000CLP-7L	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00001 Amp	41.91 mm	70 ns
KM681000LP-8	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	BATTERY BACKUP	e0			YES	.00005 Amp	42.035 mm	85 ns
STK14C88-5C45M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T32	1	5.5 V	4.11 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000	e0				.003 Amp	40.64 mm	45 ns
TC551001BFL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V							20.6 mm	85 ns
TC551001CFI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	70 ns
TC551001CP-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V					YES	.00001 Amp	42 mm	85 ns
TC551001PL-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES		42 mm	85 ns
TC551402J-25	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	4194304 words	CONFIGURABLE	5	5	1	SMALL OUTLINE	SOJ32,.44	4	SRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	4.5 V	0 Cel		DUAL	1	R-PDSO-J32		5.25 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	4.75 V					YES	.01 Amp	20.96 mm	25 ns
TC55V1001AF-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE				1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	2.7 V		e0					20.6 mm	85 ns
5962-8959837MXX	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	125 Cel		128KX8	128K		-55 Cel		DUAL		R-CDIP-T32		5.5 V	3.937 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							40.64 mm	25 ns
SMJ69CE288-35FGM	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		9	CHIP CARRIER					125 Cel	3-STATE	32KX9	32K		-55 Cel		QUAD	1	R-CQCC-N32		5.5 V			Not Qualified	294912 bit	4.5 V	AUTOMATIC POWER-DOWN				YES			35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.