Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
DUAL |
R-PDSO-J32 |
3 |
5.5 V |
3.7084 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
.01 Amp |
20.955 mm |
15 ns |
||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
524288 words |
COMMON |
3 |
2.5/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
1.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.2 V |
e3 |
20 |
260 |
.000007 Amp |
20.95 mm |
45 ns |
||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-G32 |
3 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
10 |
260 |
YES |
.00045 Amp |
20.955 mm |
12 ns |
||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
18.4 mm |
70 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
4194304 bit |
2.7 V |
45 ns |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
12 ns |
||||||||||||
|
Alliance Memory |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7084 mm |
10.16 mm |
1048576 bit |
3 V |
e3 |
40 |
245 |
20.955 mm |
15 ns |
|||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
10.16 mm |
4194304 bit |
4.5 V |
260 |
20.95 mm |
45 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J32 |
3 |
5.5 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
.01 Amp |
20.955 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
120 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
120 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
15 ns |
||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
.00001 Amp |
18.4 mm |
35 ns |
||||||||||||
|
Cypress Semiconductor |
NON-VOLATILE SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
32768 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.4 |
SRAMs |
1.27 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
2.54 mm |
7.505 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
20 |
260 |
.0015 Amp |
20.726 mm |
25 ns |
|||||||||||||||
|
Cypress Semiconductor |
NON-VOLATILE SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
32768 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.4 |
SRAMs |
1.27 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
2.54 mm |
7.505 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
20 |
260 |
.0015 Amp |
20.726 mm |
25 ns |
|||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
120 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
15 ns |
||||||||||||
|
Integrated Device Technology |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
115 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
20 ns |
||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-G32 |
3 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
10 |
260 |
YES |
.00045 Amp |
20.95 mm |
12 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
3.05 mm |
11.4 mm |
Not Qualified |
4194304 bit |
4.5 V |
.00001 Amp |
20.75 mm |
55 ns |
||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
150 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3.15 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
10 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
20 |
260 |
.000004 Amp |
18.4 mm |
45 ns |
||||||||||||
Integrated Device Technology |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-J32 |
3 |
5.5 V |
3.759 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
30 |
225 |
.01 Amp |
20.96 mm |
15 ns |
|||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
150 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3.15 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.955 mm |
12 ns |
||||||||||||
|
Cypress Semiconductor |
NON-VOLATILE SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
97 mA |
32768 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.4 |
SRAMs |
1.27 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
2.54 mm |
7.505 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
20 |
260 |
.0015 Amp |
20.726 mm |
25 ns |
|||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.04 Amp |
20.995 mm |
12 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.04 Amp |
20.995 mm |
20 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
130 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.955 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
130 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.955 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
120 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
15 ns |
||||||||||||
Analog Devices |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
32 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-XDMA-N32 |
Not Qualified |
1048576 bit |
10 YEARS OF DATA RETENTION PERIOD |
e0 |
150 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
20.96 mm |
12 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
130 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.955 mm |
12 ns |
||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.25 mm |
8 mm |
Not Qualified |
1048576 bit |
2.5 V |
e3 |
30 |
260 |
.000005 Amp |
11.8 mm |
55 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.04 Amp |
20.995 mm |
15 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
150 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3.15 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
145 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3.15 V |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
40 |
260 |
.01 Amp |
20.955 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
40 |
260 |
.01 Amp |
20.955 mm |
12 ns |
||||||||||||
Integrated Silicon Solution |
STANDARD SRAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.572 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.00025 Amp |
41.91 mm |
70 ns |
||||||||||||||
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.572 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.0004 Amp |
41.91 mm |
70 ns |
||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
3 mm |
11.43 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.00002 Amp |
20.47 mm |
55 ns |
||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
3 mm |
11.43 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.00001 Amp |
20.47 mm |
55 ns |
||||||||||||||
|
Lyontek |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
Tin (Sn) |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
10.16 mm |
4194304 bit |
2.7 V |
e3 |
30 |
260 |
20.95 mm |
55 ns |
|||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
15 ns |
||||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
2.997 mm |
11.303 mm |
1048576 bit |
2.7 V |
LG-MAX |
20.75 mm |
55 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
20 |
260 |
.000004 Amp |
18.4 mm |
45 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-J32 |
2 |
5.5 V |
3.7592 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.01 Amp |
20.955 mm |
35 ns |
|||||||||||||||
Hitachi |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
1 |
5.5 V |
3 mm |
11.3 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
40 |
260 |
.00005 Amp |
20.45 mm |
70 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.