32 SRAM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

AS7C1025B-15JIN

Alliance Memory

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

90 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

DUAL

R-PDSO-J32

3

5.5 V

3.7084 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

.01 Amp

20.955 mm

15 ns

CY62148EV30LL-45ZSXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

524288 words

COMMON

3

2.5/3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

1.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.2 V

e3

20

260

.000007 Amp

20.95 mm

45 ns

IS61C1024AL-12JLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-G32

3

5.5 V

3.76 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

e3

10

260

YES

.00045 Amp

20.955 mm

12 ns

M5M51008DVP-70H#BT

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

128KX8

128K

0 Cel

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

18.4 mm

70 ns

RMLV0408EGSP-4S2#CA0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

8

SMALL OUTLINE

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-G32

3

3.6 V

4194304 bit

2.7 V

45 ns

71V124SA12PHGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.95 mm

12 ns

AS7C31024B-15JCN

Alliance Memory

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

3.6 V

3.7084 mm

10.16 mm

1048576 bit

3 V

e3

40

245

20.955 mm

15 ns

CY62148GN-45ZSXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

PURE TIN

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

10.16 mm

4194304 bit

4.5 V

260

20.95 mm

45 ns

IDT71124S15YGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J32

3

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

30

260

.01 Amp

20.955 mm

15 ns

IDT71V124SA15PHGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

120 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3.15 V

e3

40

260

.01 Amp

20.95 mm

15 ns

IDT71V124SA15PHGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

120 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.95 mm

15 ns

IS62C1024AL-35TLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e3

30

260

.00001 Amp

18.4 mm

35 ns

STK14C88-NF25I

Cypress Semiconductor

NON-VOLATILE SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

32768 words

5

5

8

SMALL OUTLINE

SOP32,.4

SRAMs

1.27 mm

85 Cel

32KX8

32K

-40 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G32

3

5.5 V

2.54 mm

7.505 mm

Not Qualified

262144 bit

4.5 V

e3

20

260

.0015 Amp

20.726 mm

25 ns

STK14C88-NF25ITR

Cypress Semiconductor

NON-VOLATILE SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

32768 words

5

5

8

SMALL OUTLINE

SOP32,.4

SRAMs

1.27 mm

85 Cel

32KX8

32K

-40 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G32

3

5.5 V

2.54 mm

7.505 mm

Not Qualified

262144 bit

4.5 V

e3

20

260

.0015 Amp

20.726 mm

25 ns

71V124SA15PHGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

120 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.95 mm

15 ns

IDT71V124SA20PHGI8

Integrated Device Technology

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

115 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.95 mm

20 ns

IS61C1024AL-12KLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-G32

3

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

10

260

YES

.00045 Amp

20.95 mm

12 ns

R1LP0408DSP-5SI#S0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

DUAL

R-PDSO-G32

3

5.5 V

3.05 mm

11.4 mm

Not Qualified

4194304 bit

4.5 V

.00001 Amp

20.75 mm

55 ns

71V124SA10PHGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3.15 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3.15 V

e3

40

260

.01 Amp

20.95 mm

10 ns

CY62128ELL-45ZXAT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e3

20

260

.000004 Amp

18.4 mm

45 ns

IDT71024S15TYI

Integrated Device Technology

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J32

3

5.5 V

3.759 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

e0

30

225

.01 Amp

20.96 mm

15 ns

IDT71V124SA10PHGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3.15 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3.15 V

e3

40

260

.01 Amp

20.95 mm

10 ns

IDT71V124SA12TYGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

3.6 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.955 mm

12 ns

STK14C88-NF25

Cypress Semiconductor

NON-VOLATILE SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

97 mA

32768 words

5

5

8

SMALL OUTLINE

SOP32,.4

SRAMs

1.27 mm

70 Cel

32KX8

32K

0 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G32

3

5.5 V

2.54 mm

7.505 mm

Not Qualified

262144 bit

4.5 V

e3

20

260

.0015 Amp

20.726 mm

25 ns

IDT71V124SA15PHG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.95 mm

15 ns

71024S12TYGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-J32

3

5.5 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

YES

.04 Amp

20.995 mm

12 ns

71024S20TYGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-J32

3

5.5 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

YES

.04 Amp

20.995 mm

20 ns

71V124SA12TYG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J32

3

3.6 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.955 mm

12 ns

71V124SA12TYG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J32

3

3.6 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.955 mm

12 ns

71V124SA15PHGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

120 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.95 mm

15 ns

DS1245W

Analog Devices

NON-VOLATILE SRAM MODULE

COMMERCIAL

32

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

131072 words

3.3

8

MICROELECTRONIC ASSEMBLY

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-XDMA-N32

Not Qualified

1048576 bit

10 YEARS OF DATA RETENTION PERIOD

e0

150 ns

IDT71024S12YG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-J32

3

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

30

260

YES

.01 Amp

20.96 mm

12 ns

IDT71V124SA12TYG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

3.6 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.955 mm

12 ns

IS62WV1288BLL-55HLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

15 mA

131072 words

COMMON

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

1.2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

3.6 V

1.25 mm

8 mm

Not Qualified

1048576 bit

2.5 V

e3

30

260

.000005 Amp

11.8 mm

55 ns

71024S15YGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-J32

3

5.5 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

e3

30

260

YES

.04 Amp

20.995 mm

15 ns

71V124SA10PHGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3.15 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3.15 V

e3

40

260

.01 Amp

20.95 mm

10 ns

IDT71V124SA10TYG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

145 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3.15 V

0 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

3.6 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

3.15 V

e3

40

260

.01 Amp

20.955 mm

10 ns

IDT71V124SA12TYGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

3.6 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

3.15 V

e3

40

260

.01 Amp

20.955 mm

12 ns

IS62C1024L-70W

Integrated Silicon Solution

STANDARD SRAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

SRAMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T32

5.5 V

4.572 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.00025 Amp

41.91 mm

70 ns

IS62C1024L-70WI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

SRAMs

2.54 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

1

R-PDIP-T32

5.5 V

4.572 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.0004 Amp

41.91 mm

70 ns

KM681000CLG-5

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.00002 Amp

20.47 mm

55 ns

KM681000CLG-5L

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.00001 Amp

20.47 mm

55 ns

LY62W5128WL-55LLI

Lyontek

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

Tin (Sn)

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

10.16 mm

4194304 bit

2.7 V

e3

30

260

20.95 mm

55 ns

71V124SA15PHG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.95 mm

15 ns

AS6C1008-55SINL

Alliance Memory

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G32

3

5.5 V

2.997 mm

11.303 mm

1048576 bit

2.7 V

LG-MAX

20.75 mm

55 ns

CY62128ELL-45ZXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e3

20

260

.000004 Amp

18.4 mm

45 ns

CY7C109B-35VI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J32

2

5.5 V

3.7592 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

.01 Amp

20.955 mm

35 ns

HM628128BLFP-75

Hitachi

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

1

5.5 V

3 mm

11.3 mm

Not Qualified

1048576 bit

4.5 V

e0

40

260

.00005 Amp

20.45 mm

70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.