32 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT71024S20YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.01 Amp	20.96 mm	20 ns
IS62WV5128BLL-55HLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	2.8	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	512KX8	512K	1.2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.25 mm	8 mm	Not Qualified	4194304 bit	2.5 V		e3	30	260		.000015 Amp	11.8 mm	55 ns
CY62128EV30LL-45ZAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.2 V		e3	30	260		.000003 Amp	11.8 mm	45 ns
AS6C4008-55ZINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON		3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN	DUAL		R-PDSO-G32	3				Not Qualified	4194304 bit			e3				.00003 Amp		55 ns
CY62128EV30LL-45SXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	2.997 mm	11.303 mm	Not Qualified	1048576 bit	2.2 V		e4	20	260		.000003 Amp	20.4465 mm	45 ns
IS62WV1288BLL-55QLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	1.2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	3 mm	11.305 mm	Not Qualified	1048576 bit	2.5 V		e3	30	260		.000005 Amp	20.445 mm	55 ns
AS6C1008-55SIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	1.5 V	-40 Cel	TIN	DUAL	1	R-PDSO-G32	3	5.5 V	2.997 mm	11.303 mm	Not Qualified	1048576 bit	2.7 V	LG_MAX	e3	40	260	YES	.00003 Amp	20.75 mm	55 ns
R1LP0408DSP-5SI#B1	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE				85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G32	3	5.5 V				4194304 bit	4.5 V								55 ns
IS62WV1288BLL-55TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.5 V		e3	40	260		.000005 Amp	18.4 mm	55 ns
71024S15TYGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	15 ns
AS6C4008-55ZIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e3				.00003 Amp	20.95 mm	55 ns
CY7C1018DV33-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	3.63 V	3.556 mm	7.5819 mm	Not Qualified	1048576 bit	2.97 V		e4	20	260		.003 Amp	20.828 mm	10 ns
IS63LV1024L-10HL	Integrated Silicon Solution	STANDARD SRAM	COMMERCIAL	32	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G32		3.6 V	1.25 mm	8 mm	Not Qualified	1048576 bit	3 V		e3	10	260		.0015 Amp	11.8 mm	10 ns
71V124SA12TYGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm	7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	12 ns
IDT71024S15TYGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260		.01 Amp	20.96 mm	15 ns
AS6C4008-55TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V						.00003 Amp	18.4 mm	55 ns
R1LP0408DSP-5SI#S1	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE				85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G32	3	5.5 V				4194304 bit	4.5 V								55 ns
UPD431000AGZ-70LL-KJH-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e6				.00001 Amp	18.4 mm	70 ns
UPD431000AGZ-70X-KJH-A	Renesas Electronics	STANDARD SRAM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-25 Cel	TIN BISMUTH	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e6				.00002 Amp	18.4 mm	70 ns
R1LP0408DSP-5SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	3	5.5 V	3.05 mm	11.4 mm	Not Qualified	4194304 bit	4.5 V						.00001 Amp	20.75 mm	55 ns
X2004J-25	Xicor	NON-VOLATILE SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	NMOS	J BEND	PARALLEL	ASYNCHRONOUS		512 words		5	5	8	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	512X8	512		0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQCC-J32		5.25 V			Not Qualified	4096 bit	4.75 V		e0			YES			250 ns
71V124SA12TYGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm	7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	12 ns
CY62128EV30LL-45SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	2.997 mm	11.303 mm	Not Qualified	1048576 bit	2.2 V		e4	20	260		.000003 Amp	20.4465 mm	45 ns
CY62138FV30LL-45ZAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000004 Amp	11.8 mm	45 ns
CY62148GN-45SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm	11.303 mm		4194304 bit	4.5 V				260			20.446 mm	45 ns
CY7C1019DV33-10ZSXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e3	20	260		.003 Amp	20.95 mm	10 ns
71024S15TYGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	15 ns
71V124SA12PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.95 mm	12 ns
AS7C1024B-12JIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel		DUAL		R-PDSO-J32	3	5.5 V	3.7084 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V						.01 Amp	20.995 mm	12 ns
IDT71V124SA12PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.95 mm	12 ns
AS6C4008-55STINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G32	3				Not Qualified	4194304 bit							.00003 Amp		55 ns
AS7C1024B-12JCN	Alliance Memory	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL		R-PDSO-J32	3	5.5 V	3.7084 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V						.01 Amp	20.995 mm	12 ns
DS1245AB-120-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32		5.25 V			Not Qualified	1048576 bit	4.75 V		e0				.005 Amp		120 ns
DS1245AB-120IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-T32		5.25 V			Not Qualified	1048576 bit	4.75 V		e0				.005 Amp		120 ns
DS1245AB-120IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-T32		5.25 V			Not Qualified	1048576 bit	4.75 V		e3				.0006 Amp		120 ns
HM628128BLFP-7	Hitachi	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	11.3 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	20.45 mm	70 ns
R1LV0408DSP-5SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G32	2	3.6 V	3.05 mm	11.4 mm		4194304 bit	2.7 V							20.75 mm	55 ns
AS7C1024B-12TJIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.683 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V			40	245		.01 Amp	20.995 mm	12 ns
AS7C31025B-12JIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-J32	3	3.6 V	3.7084 mm	10.16 mm		1048576 bit	3 V		e3/e6					20.955 mm	12 ns
CY7C1018DV33-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	3.63 V	3.556 mm	7.5819 mm	Not Qualified	1048576 bit	2.97 V		e4	20	260		.003 Amp	20.828 mm	10 ns
DS1245Y-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-T32	1	5.5 V			Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		120 ns
DS1245Y-120+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-T32		5.5 V			Not Qualified	1048576 bit	4.5 V		e3				.0006 Amp		120 ns
71024S15TYG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	15 ns
HM628512BLFP-7	Renesas Electronics	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	-20 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm	11.3 mm	Not Qualified	4194304 bit	4.5 V	LG-MAX					.00002 Amp	20.95 mm	70 ns
M5M51008DVP-70H	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	70 ns
71V124SA15TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm	7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	15 ns
R1LV0408DSP-5SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3		8	SMALL OUTLINE	SOP32,.56		1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	2	3.6 V	3.05 mm	11.4 mm		4194304 bit	2.7 V					YES	.0003 Amp	20.75 mm	55 ns
71V124SA12YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	30	260		.01 Amp	20.955 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.