32 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-8969001XX	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER				125 Cel		2KX8	2K		-55 Cel		QUAD		R-XQCC-N32	5.5 V			Not Qualified	16384 bit	4.5 V								25 ns
BQ4015YMB-85	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			115 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDIP-T32				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		85 ns
SMJ69CE288-55FG	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX9	32K	4.5 V	-55 Cel		QUAD		R-XQCC-N32				Not Qualified	294912 bit				NOT SPECIFIED	NOT SPECIFIED		.0002 Amp		55 ns
SM68CE256-55FGM	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD	1	R-CQCC-N32	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		55 ns
BQ4015LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDMA-P32	3.6 V			Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.001 Amp		70 ns
BQ4013MA-120	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDMA-P32	5.5 V	9.53 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	42.8 mm	120 ns
5962-8959838MUX	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel		DUAL		R-CDSO-N32	5.5 V	2.4384 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							20.828 mm	20 ns
SM69CE288-45FGM	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		9	CHIP CARRIER				125 Cel	3-STATE	32KX9	32K		-55 Cel		QUAD	1	R-CQCC-N32	5.5 V			Not Qualified	294912 bit	4.5 V	AUTOMATIC POWER-DOWN				YES			45 ns
BQ4015LYMA-70	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	IN-LINE				85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDIP-T32	3.6 V				4194304 bit	3 V								70 ns
BQ4015YMB-85N	Texas Instruments	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			115 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDIP-T32				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		85 ns
SM68CE64-35FGM	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel		QUAD	1	R-CQCC-N32	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0001 Amp		35 ns
BQ4014YMA-85	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		256KX8	256K		0 Cel		DUAL		R-XDMA-T32	5.5 V			Not Qualified	2097152 bit	4.5 V								85 ns
SMJ68CE64-25FGM	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel		QUAD	1	R-CQCC-N32	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0001 Amp		25 ns
SMJ68CE256-35FGM	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD	1	R-CQCC-N32	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		35 ns
SM68CE256-35FGM	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD	1	R-CQCC-N32	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		35 ns
5962-8959838MXX	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	125 Cel		128KX8	128K		-55 Cel		DUAL		R-CDIP-T32	5.5 V	3.937 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							40.64 mm	20 ns
BQ4013LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDMA-P32	3.6 V	9.53 mm	15.24 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.001 Amp	42.8 mm	70 ns
5962-8959837MXA	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T32	5.5 V	3.937 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					40.64 mm	25 ns
5962-8959837MTX	Texas Instruments	STANDARD SRAM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		8	FLATPACK			1.27 mm	125 Cel		128KX8	128K		-55 Cel		DUAL		R-CDFP-F32	5.5 V	3.175 mm	10.414 mm	Not Qualified	1048576 bit	4.5 V							20.828 mm	25 ns
5962-8959838MUA	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDSO-N32	5.5 V	2.4384 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0					20.828 mm	20 ns
SM69CE288-35JD	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX9	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T32				Not Qualified	294912 bit				NOT SPECIFIED	NOT SPECIFIED		.0002 Amp		35 ns
5962-8959837MZA	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T32	5.5 V	5.8928 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY	e0						25 ns
SMJ69CE72-25FGM	Texas Instruments	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	9	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	8KX9	8K	2 V	-55 Cel		QUAD	1	R-CQCC-N32	5.5 V			Not Qualified	73728 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		25 ns
SN74ACT2160-12FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND				16384 words		5	5	4	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel		16KX4	16K		0 Cel		QUAD		R-PQCC-J32				Not Qualified	65536 bit									12 ns
SN74BCT2164FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		5	CHIP CARRIER				70 Cel	3-STATE	16KX5	16K		0 Cel		QUAD	1	R-PQCC-J32				Not Qualified	81920 bit						NO			12 ns
SN74ACT2160-17FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	16384 words		5	5	4	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel		QUAD	1	R-PQCC-J32	5.25 V			Not Qualified	65536 bit	4.75 V	8K X 4 2-WAY CACHE ADDRESS COMPARATOR/DATA RAM		NOT SPECIFIED	NOT SPECIFIED	NO	.15 Amp		17 ns
SN74BCT2166FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		5	CHIP CARRIER				70 Cel	3-STATE	16KX5	16K		0 Cel		QUAD	1	R-PQCC-J32				Not Qualified	81920 bit						NO			12 ns
SN74ACT2164FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		5	CHIP CARRIER				70 Cel		16KX5	16K		0 Cel		QUAD		R-PQCC-J32				Not Qualified	81920 bit
SN74BCT2166-12FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES				J BEND				16384 words				5	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm			16KX5	16K				QUAD		R-PQCC-J32				Not Qualified	81920 bit									12 ns
SN74ACT2164-18FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	16384 words		5	5	5	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	16KX5	16K		0 Cel		QUAD	1	R-PQCC-J32	5.25 V			Not Qualified	81920 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	NO	.15 Amp		18 ns
SN74ACT2163-20FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	16384 words		5	5	5	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	16KX5	16K		0 Cel		QUAD	1	R-PQCC-J32	5.25 V			Not Qualified	81920 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	NO	.15 Amp		20 ns
SN74BCT2165FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words				4	CHIP CARRIER						8KX4	8K				QUAD		R-PQCC-J32				Not Qualified	32768 bit
SN74BCT2160-12FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES				J BEND				16384 words				4	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm			16KX4	16K				QUAD		R-PQCC-J32				Not Qualified	65536 bit									12 ns
SN74BCT2165-12FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES				J BEND				16384 words				4	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm			16KX4	16K				QUAD		R-PQCC-J32				Not Qualified	65536 bit									12 ns
SN74ACT2160-17FMR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND				16384 words		5	5	4	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel		16KX4	16K		0 Cel		QUAD		R-PQCC-J32				Not Qualified	65536 bit									17 ns
SN74BCT2160FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER					3-STATE	16KX4	16K				QUAD	1	R-PQCC-J32				Not Qualified	65536 bit		8K X 4 2-WAY CACHE ADDRESS COMPARATOR/DATA RAM				NO			12 ns
SN74BCT2164-12FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES				J BEND				16384 words				5	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm			16KX5	16K				QUAD		R-PQCC-J32				Not Qualified	81920 bit									12 ns
SN74BCT2163-12FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES				J BEND				16384 words				5	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm			16KX5	16K				QUAD		R-PQCC-J32				Not Qualified	81920 bit									12 ns
SN74ACT2160FM	Texas Instruments	CACHE TAG SRAM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words				4	CHIP CARRIER						8KX4	8K				QUAD		R-PQCC-J32				Not Qualified	32768 bit
SN74BCT2163FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		5	CHIP CARRIER				70 Cel	3-STATE	16KX5	16K		0 Cel		QUAD	1	R-PQCC-J32				Not Qualified	81920 bit						NO			12 ns
SN74ACT2163FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		5	CHIP CARRIER				70 Cel		16KX5	16K		0 Cel		QUAD		R-PQCC-J32				Not Qualified	81920 bit
DS1750Y-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			40 mA	524288 words			3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32				Not Qualified	4194304 bit			e0				.004 Amp		150 ns
DS1645EE-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32				Not Qualified	1048576 bit			e0				.005 Amp		100 ns
DS1650AB-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32				Not Qualified	4194304 bit			e0				.005 Amp		70 ns
DS1650Y-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32				Not Qualified	4194304 bit			e0				.005 Amp		70 ns
DS1650Y-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32				Not Qualified	4194304 bit			e0				.005 Amp		70 ns
DS1650Y-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	42.925 mm	100 ns
DS1645AB-120-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.25 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0				.005 Amp	42.925 mm	120 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.