32 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M48Z512A-70PM9	STMicroelectronics	NON-VOLATILE SRAM MODULE		32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE			2.54 mm		3-STATE	512KX8	512K			DUAL	1	R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP				YES		42.8 mm	70 ns
M48Z128Y-85CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	5	5	8	SMALL OUTLINE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V			Not Qualified	1048576 bit	4.5 V	REQUIRES A SNAPHAT BATTERY PACKAGE	e0				.004 Amp		85 ns
M48Z128V-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K	0 Cel	MATTE TIN	DUAL		R-PDMA-P32		3.6 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	3 V		e3				.003 Amp	42.8 mm	85 ns
M48Z512AV-70PM6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	IN-LINE			2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDIP-T32		3.6 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	3 V							42.8 mm	70 ns
M48Z129V-85PM1TR	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	3.3		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K	0 Cel		DUAL		R-PDIP-T32		3.6 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	3 V							42.8 mm	85 ns
M48Z512AV-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	IN-LINE			2.54 mm	70 Cel		512KX8	512K	0 Cel	MATTE TIN	DUAL		R-PDIP-T32		3.6 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	3 V		e3					42.8 mm	70 ns
M48Z256Y-85PL1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	262144 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T32		5.5 V			Not Qualified	2097152 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		85 ns
M48Z128V-85CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	3.3		8	SMALL OUTLINE				70 Cel		128KX8	128K	0 Cel		DUAL		R-PDSO-G32		3.6 V			Not Qualified	1048576 bit	3 V	REQUIRES A SNAPHAT BATTERY PACKAGE							85 ns
M48Z512AV-85PM6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	3.3	3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDIP-T32		3.6 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	3 V						.003 Amp	42.8 mm	85 ns
M48Z512A-85PM9	STMicroelectronics	NON-VOLATILE SRAM MODULE		32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE			2.54 mm		3-STATE	512KX8	512K			DUAL	1	R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP				YES		42.8 mm	85 ns
M48Z256-85PL1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	262144 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T32		5.5 V			Not Qualified	2097152 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		85 ns
M48Z128-120CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	5	5	8	SMALL OUTLINE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V			Not Qualified	1048576 bit	4.75 V	REQUIRES A SNAPHAT BATTERY PACKAGE	e0				.004 Amp		120 ns
M48Z512Y-120PL1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 5 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.005 Amp	52.96 mm	120 ns
M48Z512AY-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL	1	R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e0	NOT SPECIFIED	NOT SPECIFIED	YES	.005 Amp	42.8 mm	85 ns
M48Z129V-70PM1TR	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	3.3		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K	0 Cel		DUAL		R-PDIP-T32		3.6 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	3 V							42.8 mm	70 ns
M48Z129Y-70PM1TR	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K	0 Cel		DUAL		R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							42.8 mm	70 ns
M48Z512AV-70CS9	STMicroelectronics	STANDARD SRAM		32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	SMALL OUTLINE						512KX8	512K			DUAL		R-PDSO-G32		3.6 V			Not Qualified	4194304 bit	3 V								70 ns
M48Z512-85PL1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 5 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.005 Amp	52.96 mm	85 ns
M48Z129Y-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	131072 words	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K	0 Cel	MATTE TIN	DUAL		R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3				.004 Amp	42.8 mm	85 ns
M48Z128Y-120PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	1	R-PDMA-P32		5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e0			YES	.004 Amp	42.8 mm	120 ns
M48Z512AV-70PM9	STMicroelectronics	NON-VOLATILE SRAM MODULE		32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	IN-LINE			2.54 mm			512KX8	512K			DUAL		R-PDIP-T32		3.6 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	3 V							42.8 mm	70 ns
M48Z128V-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words	3.3		8	MICROELECTRONIC ASSEMBLY			2.54 mm	70 Cel		128KX8	128K	0 Cel	MATTE TIN	DUAL		R-PDMA-P32		3.6 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	3 V		e3					42.8 mm	70 ns
M48Z512-120PL1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 5 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.005 Amp	52.96 mm	120 ns
M48Z128V-120CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	3.3		8	SMALL OUTLINE				70 Cel		128KX8	128K	0 Cel		DUAL		R-PDSO-G32		3.6 V			Not Qualified	1048576 bit	3 V	REQUIRES A SNAPHAT BATTERY PACKAGE							120 ns
M48Z128V-70CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	3.3		8	SMALL OUTLINE				70 Cel		128KX8	128K	0 Cel		DUAL		R-PDSO-G32		3.6 V			Not Qualified	1048576 bit	3 V	SNAPHAT BATTERY TOP TO BE ORDERED SEPARATELY TO USE THE DEVICE AS A NON-VOLATILE SRAM							70 ns
M48Z512A-70CS1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE				70 Cel		512KX8	512K	0 Cel		DUAL		R-PDSO-G32		5.5 V			Not Qualified	4194304 bit	4.75 V	REQUIRES A SNAPHAT BATTERY PACKAGE							70 ns
M48Z512AV-85PM9	STMicroelectronics	NON-VOLATILE SRAM MODULE		32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	IN-LINE			2.54 mm			512KX8	512K			DUAL		R-PDIP-T32		3.6 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	3 V							42.8 mm	85 ns
M48Z129V-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K	0 Cel	MATTE TIN	DUAL		R-PDIP-T32		3.6 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION; BATTERY BACKUP; WRITE PROTECT	e3				.003 Amp	42.8 mm	70 ns
M48Z129V-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K	0 Cel	MATTE TIN	DUAL		R-PDIP-T32	1	3.6 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	3 V		e3				.003 Amp	42.8 mm	85 ns
M48Z512AV-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	3.3	3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K	0 Cel	MATTE TIN	DUAL		R-PDIP-T32		3.6 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	3 V		e3				.003 Amp	42.8 mm	85 ns
M48Z512A-70CS9	STMicroelectronics	NON-VOLATILE SRAM MODULE		32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE						512KX8	512K			DUAL		R-PDSO-G32		5.5 V			Not Qualified	4194304 bit	4.75 V	REQUIRES A SNAPHAT BATTERY PACKAGE							70 ns
M48Z512AY-85PM6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V						.003 Amp	42.8 mm	85 ns
M48Z512AY-85CS1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE				70 Cel		512KX8	512K	0 Cel		DUAL		R-PDSO-G32		5.5 V			Not Qualified	4194304 bit	4.5 V	REQUIRES A SNAPHAT BATTERY PACKAGE							85 ns
M48Z128-70CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	5	5	8	SMALL OUTLINE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V			Not Qualified	1048576 bit	4.75 V	REQUIRES A SNAPHAT BATTERY PACKAGE	e0				.004 Amp		70 ns
M48Z512AY-85CS9	STMicroelectronics	NON-VOLATILE SRAM MODULE		32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE						512KX8	512K			DUAL		R-PDSO-G32		5.5 V			Not Qualified	4194304 bit	4.5 V	REQUIRES A SNAPHAT BATTERY PACKAGE							85 ns
M48Z512BV-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL		R-PDMA-P32		3.6 V			Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.003 Amp		85 ns
M48Z512A-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL	1	R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e0	NOT SPECIFIED	NOT SPECIFIED	YES	.005 Amp	42.8 mm	85 ns
M48Z512Y-85PL1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 5 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.005 Amp	52.96 mm	85 ns
M48Z256-120PL1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	262144 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T32		5.5 V			Not Qualified	2097152 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		120 ns
M48Z128-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	1	R-PDMA-P32		5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e0			YES	.004 Amp	42.8 mm	85 ns
M48Z128-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3			YES	.004 Amp	42.8 mm	70 ns
M48Z512AY-70CS1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE				70 Cel		512KX8	512K	0 Cel		DUAL		R-PDSO-G32		5.5 V			Not Qualified	4194304 bit	4.5 V	REQUIRES A SNAPHAT BATTERY PACKAGE							70 ns
M48Z512AV-85CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	SMALL OUTLINE				70 Cel		512KX8	512K	0 Cel		DUAL		R-PDSO-G32		3.6 V			Not Qualified	4194304 bit	3 V	REQUIRES A SNAPHAT BATTERY PACKAGE							85 ns
M48Z128Y-120CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	5	5	8	SMALL OUTLINE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V			Not Qualified	1048576 bit	4.5 V	REQUIRES A SNAPHAT BATTERY PACKAGE	e0				.004 Amp		120 ns
M48Z128Y-70CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	5	5	8	SMALL OUTLINE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V			Not Qualified	1048576 bit	4.5 V	REQUIRES A SNAPHAT BATTERY PACKAGE	e0				.004 Amp		70 ns
M48Z128V-120PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K	0 Cel	MATTE TIN	DUAL		R-PDMA-P32		3.6 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	3 V		e3				.003 Amp	42.8 mm	120 ns
M48Z512A-85CS9	STMicroelectronics	NON-VOLATILE SRAM MODULE		32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE						512KX8	512K			DUAL		R-PDSO-G32		5.5 V			Not Qualified	4194304 bit	4.75 V	REQUIRES A SNAPHAT BATTERY PACKAGE							85 ns
M48Z512AY-70PM9	STMicroelectronics	NON-VOLATILE SRAM MODULE		32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE			2.54 mm		3-STATE	512KX8	512K			DUAL	1	R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP				YES		42.8 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.