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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TTS92256GC-15C-1	Infineon Technologies	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		QUAD	R-XQCC-N32					Not Qualified	262144 bit						.015 Amp		15 ns
5962-1821101QXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				125 Cel		32KX8	32K		-55 Cel	GOLD	DUAL	R-XDIP-T32	1	5.5 V			Qualified	262144 bit	4.5 V	e4						35 ns
CY62148EV30LL-55SXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	3.6 V	2.997 mm	11.303 mm	Not Qualified	4194304 bit	2.2 V	e4	20	260		.000007 Amp	20.4465 mm	55 ns
STK14CA8C-5C35M	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	COMMON	5		8	IN-LINE	DIP32,.3		2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	GOLD	DUAL	R-CDIP-T32	1	5.5 V	3.96 mm	7.62 mm		1048576 bit	4.5 V	e4			YES	.01 Amp	40.64 mm	35 ns
CY14B101LA-SZ25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL	R-PDSO-G32	3	3.6 V	2.54 mm	7.5 mm	Not Qualified	1048576 bit	2.7 V	e3	20	260		.005 Amp	20.726 mm	25 ns
CY62148G18-55ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		1.8		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL	R-PDSO-G32	3	2.2 V	1.2 mm	10.16 mm		4194304 bit	1.65 V			260			20.95 mm	55 ns
CY62148GN30-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm		4194304 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			20.95 mm	45 ns
CY62128ELL-45ZXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V	e3	20	260		.000004 Amp	18.4 mm	45 ns
CY7C1019D-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-J32	3	5.5 V	3.7592 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e4	40	260		.003 Amp	20.955 mm	10 ns
CY62148GN30-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm		4194304 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			20.95 mm	45 ns
CY62138FLL-45SXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3				Not Qualified	2097152 bit		e4	20	260		.000005 Amp		45 ns
CY7C109D-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-J32	3	5.5 V	3.7592 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e4	40	260		.003 Amp	20.955 mm	10 ns
CY62128ELL-55SXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	5.5 V	2.997 mm	11.303 mm	Not Qualified	1048576 bit	4.5 V	e4	20	260		.00003 Amp	20.4465 mm	55 ns
CY7C1019DL-12ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G32	3				Not Qualified	1048576 bit		e3	20	260		.0012 Amp		12 ns
CY7C1019DL-10ZXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G32	3				Not Qualified	1048576 bit		e3	20	260		.0012 Amp		10 ns
CY7C1019DL-12VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-J32	3				Not Qualified	1048576 bit		e4	40	260		.0012 Amp		12 ns
CY62128ELL-55SXET	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	5.5 V	2.997 mm	11.303 mm	Not Qualified	1048576 bit	4.5 V	e4	20	260		.00003 Amp	20.4465 mm	55 ns
CY14B101LA-SZ25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL	R-PDSO-G32	3	3.6 V	2.54 mm	7.5 mm	Not Qualified	1048576 bit	2.7 V	e3	20	260		.005 Amp	20.726 mm	25 ns
CY62128ELL-55ZXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V	e3	20	260		.00003 Amp	18.4 mm	55 ns
CY62128L-70SCTR	Infineon Technologies	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0				.0001 Amp		70 ns
STK14CA8C-35C35MTR	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	COMMON	3.3		8	IN-LINE	DIP32,.3		2.54 mm	125 Cel	3-STATE	128KX8	128K	3 V	-55 Cel		DUAL	R-CDIP-T32		3.6 V	3.96 mm	7.62 mm		1048576 bit	3 V				YES	.01 Amp	40.64 mm	35 ns
CY62128ELL-45SXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	5.5 V	2.997 mm	11.303 mm	Not Qualified	1048576 bit	4.5 V	e4	20	260		.000004 Amp	20.4465 mm	45 ns
CY7C1019DL-12VXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-J32	3				Not Qualified	1048576 bit		e4	40	260		.0012 Amp		12 ns
CY62148G30-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL	R-PDSO-G32	3	3.6 V	1.2 mm	10.16 mm		4194304 bit	2.2 V			260			20.95 mm	45 ns
CY7C1009D-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-J32	3	5.5 V	3.556 mm	7.5819 mm	Not Qualified	1048576 bit	4.5 V	e4	40	260		.003 Amp	20.828 mm	10 ns
STK14CA8C-35C35M	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	COMMON	3.3		8	IN-LINE	DIP32,.3		2.54 mm	125 Cel	3-STATE	128KX8	128K	3 V	-55 Cel	GOLD	DUAL	R-CDIP-T32	1	3.6 V	3.96 mm	7.62 mm		1048576 bit	3 V	e4			YES	.01 Amp	40.64 mm	35 ns
CY62138FV30LL-45ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.2 V	e4	30	260		.000004 Amp	18.4 mm	45 ns
CY62148G18-55ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		1.8		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL	R-PDSO-G32	3	2.2 V	1.2 mm	10.16 mm		4194304 bit	1.65 V			260			20.95 mm	55 ns
CY62128ELL-55ZAXET	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V	e4	20	260		.00003 Amp	11.8 mm	55 ns
CY62148G30-45SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL	R-PDSO-G32	3	3.6 V	2.997 mm	11.303 mm		4194304 bit	2.2 V			260			20.446 mm	45 ns
CY7C1019DL-12ZXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G32	3				Not Qualified	1048576 bit		e3	20	260		.0012 Amp		12 ns
CY62148G-45SXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	R-PDSO-G32		5.5 V	2.997 mm	11.303 mm		4194304 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			20.4465 mm	45 ns
CY62148G30-45SXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	R-PDSO-G32		3.6 V	2.997 mm	11.303 mm		4194304 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			20.4465 mm	45 ns
CY62148EV30LL-45SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	3.6 V	2.997 mm	11.303 mm	Not Qualified	4194304 bit	2.2 V	e4	20	260		.000007 Amp	20.4465 mm	45 ns
CY62148G-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	R-PDSO-G32		5.5 V	1.2 mm	10.16 mm		4194304 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			20.95 mm	45 ns
CY62148GN30-45SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	R-PDSO-G32		3.6 V	2.997 mm	11.303 mm		4194304 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			20.446 mm	45 ns
CY62138FV30LL-45ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.5 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G32	3	3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.2 V	e3	20	260		.000004 Amp	18.4 mm	45 ns
CY7C1019DL-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-J32	3				Not Qualified	1048576 bit		e4	40	260		.0012 Amp		10 ns
CY7C109D-10ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V	e4	30	260		.003 Amp	18.4 mm	10 ns
CY7C1019DL-10VXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-J32	3				Not Qualified	1048576 bit		e4	40	260		.0012 Amp		10 ns
CY62148GN-45SXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	R-PDSO-G32		5.5 V	2.997 mm	11.303 mm		4194304 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			20.4465 mm	45 ns
CY7C1019D-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-J32	3	5.5 V	3.7592 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e4	40	260		.003 Amp	20.955 mm	10 ns
CY62148GN30-45SXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	R-PDSO-G32		3.6 V	2.997 mm	11.303 mm		4194304 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			20.4465 mm	45 ns
CY62148G30-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm		4194304 bit	2.2 V		NOT SPECIFIED	NOT SPECIFIED			20.95 mm	45 ns
CY7C1019DL-10ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G32	3				Not Qualified	1048576 bit		e3	20	260		.0012 Amp		10 ns
CY62148GN-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	R-PDSO-G32		5.5 V	1.2 mm	10.16 mm		4194304 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			20.95 mm	45 ns
CY62138FV30LL-45ZAXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.2 V	e4	20	260		.000004 Amp	11.8 mm	45 ns
CY7C109B-12ZXC	Infineon Technologies	STANDARD SRAM		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	131072 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-G32		5.5 V	1.2 mm	8 mm		1048576 bit	4.5 V				YES	.01 Amp	18.4 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.