32 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1009B-15VI	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.34		1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-J32		5.5 V	3.556 mm	7.5819 mm		1048576 bit	4.5 V					YES	.01 Amp	20.828 mm	15 ns
CY7C1009B-12VC	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.34		1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-J32		5.5 V	3.556 mm	7.5819 mm		1048576 bit	4.5 V					YES	.01 Amp	20.828 mm	12 ns
CY7C109B-15ZC	Infineon Technologies	STANDARD SRAM		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-G32		5.5 V	1.2 mm	8 mm		1048576 bit	4.5 V					YES	.01 Amp	18.4 mm	15 ns
CY7C109B-15VC	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.44		1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-J32		5.5 V	3.7592 mm	10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	15 ns
CY7C109BL-15VC	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.44		1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-J32		5.5 V	3.7592 mm	10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	15 ns
CY7C109B-15VI	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.44		1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-J32		5.5 V	3.7592 mm	10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	15 ns
CY7C109B-15ZXC	Infineon Technologies	STANDARD SRAM		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-G32		5.5 V	1.2 mm	8 mm		1048576 bit	4.5 V					YES	.01 Amp	18.4 mm	15 ns
CY7C1009B-15VXC	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.34		1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-J32		5.5 V	3.556 mm	7.5819 mm		1048576 bit	4.5 V					YES	.01 Amp	20.828 mm	15 ns
CY7C109B-20ZC	Infineon Technologies	STANDARD SRAM		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	131072 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-G32		5.5 V	1.2 mm	8 mm		1048576 bit	4.5 V					YES	.01 Amp	18.4 mm	20 ns
CY7C1009B-20VC	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	75 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.34		1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-J32		5.5 V	3.556 mm	7.5819 mm		1048576 bit	4.5 V					YES	.01 Amp	20.828 mm	20 ns
CY7C109B-12VC	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.44		1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-J32		5.5 V	3.7592 mm	10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	12 ns
CY7C1009B-15VC	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.34		1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-J32		5.5 V	3.556 mm	7.5819 mm		1048576 bit	4.5 V					YES	.01 Amp	20.828 mm	15 ns
CY7C109B-20VI	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	75 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.44		1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-J32		5.5 V	3.7592 mm	10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	20 ns
CY7C109B-12ZC	Infineon Technologies	STANDARD SRAM		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	131072 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-G32		5.5 V	1.2 mm	8 mm		1048576 bit	4.5 V					YES	.01 Amp	18.4 mm	12 ns
CY62138FV30LL-45ZAXAT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000004 Amp	11.8 mm	45 ns
CY62138FLL-45SXI	Infineon Technologies	SRAM STD	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	5.5 V	2.997 mm	11.303 mm	Not Qualified	2097152 bit	4.5 V		e4	20	260		.000005 Amp	20.4465 mm	45 ns
CY7C1019DV33-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-J32	3	3.6 V	3.75 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e4	40	260		.003 Amp	20.955 mm	10 ns
CY7C109D-10ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.003 Amp	18.4 mm	10 ns
CY62148G-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL	R-PDSO-G32	3	5.5 V	1.2 mm	10.16 mm		4194304 bit	4.5 V				260			20.95 mm	45 ns
PI2C2589-35P	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	200 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	294912 bit			e0				.13 Amp		34 ns
PI2C2589-25P	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	220 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	294912 bit			e0				.13 Amp		24 ns
PI2C2589-15J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	260 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J32					Not Qualified	294912 bit			e0				.15 Amp		14 ns
PI2C2589-20P	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	240 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	294912 bit			e0				.13 Amp		19 ns
PI2C2589-25J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	220 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J32					Not Qualified	294912 bit			e0				.13 Amp		24 ns
PI2C2589-20J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	240 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J32					Not Qualified	294912 bit			e0				.13 Amp		19 ns
PI2C2589-35J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	200 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J32					Not Qualified	294912 bit			e0				.13 Amp		34 ns
PI2C2589-15P	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	260 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	294912 bit			e0				.15 Amp		14 ns
DS1647-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			95 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	4194304 bit			e0				.004 Amp		150 ns
DS1750Y-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	524288 words			3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	4194304 bit			e0				.004 Amp		150 ns
DS1750Y-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	524288 words			3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	4194304 bit			e0				.004 Amp		200 ns
DS1645Y-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	42.925 mm	85 ns
DS1645Y-70-IND	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	1048576 bit			e0				.005 Amp		70 ns
DS1646-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	1048576 bit			e0				.004 Amp		150 ns
DS1750Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL	R-PDMA-T32		5.5 V			Not Qualified	4194304 bit	2.7 V	BATTERY BACK-UP	e0						70 ns
DS1750Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL	R-PDMA-T32		5.5 V			Not Qualified	4194304 bit	2.7 V	BATTERY BACK-UP	e0						100 ns
DS1745Y-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	131072 words			3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	1048576 bit			e0				.004 Amp		200 ns
DS1745Y-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	131072 words			3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	1048576 bit			e0				.004 Amp		150 ns
DS1745Y-150IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		3	3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T32		3.6 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V	DATA RETENTION = 10 YRS	e0				.004 Amp	42.925 mm	150 ns
DS1249W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		256KX8	256K		0 Cel	TIN LEAD	DUAL	R-XDMA-P32		3.6 V			Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e0						100 ns
DS1249AB-85IND#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		262144 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		256KX8	256K		-40 Cel		DUAL	R-XDMA-P32		5.25 V			Not Qualified	2097152 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED
DS1249W-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		256KX8	256K		0 Cel	TIN LEAD	DUAL	R-XDMA-P32		3.6 V			Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e0						150 ns
DS1245W-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL	R-XDMA-P32	1	3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e0				.00015 Amp		150 ns
DS1249Y-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	262144 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		256KX8	256K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	10.29 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	DATA RETENTION = 10 YRS	e0				.00015 Amp	53.085 mm	100 ns
DS1250W-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL	R-XDMA-P32		3.6 V			Not Qualified	4194304 bit	3 V		e0				.00015 Amp		150 ns
DS1249Y-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	262144 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		256KX8	256K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	DATA RETENTION > 10 YEARS	e0				.005 Amp	53.085 mm	85 ns
DS1250W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL	R-XDMA-P32		3.6 V			Not Qualified	4194304 bit	3 V		e0				.00015 Amp		100 ns
DS1245Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL	R-XDMA-T32		5.5 V			Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		100 ns
DS1245W-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL	R-XDMA-P32		3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e0				.00015 Amp		100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.