36 SRAM 982

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
KM684002BJI-1500	Samsung	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						23.5 mm	15 ns
K6R4008C1D-KC100	Samsung	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-J36	2	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						23.5 mm	10 ns
K6R4008C1A-JI15	Samsung	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	175 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			.01 Amp	23.5 mm	15 ns
K6R4008V1B-TI15T	Samsung	STANDARD SRAM	INDUSTRIAL	36	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	195 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP36,.46,40	SRAMs	1 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G36					Not Qualified	4194304 bit			e0			.01 Amp		15 ns
K6R4008V1C-JI12	Samsung	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0			.01 Amp	23.5 mm	12 ns
K6R4008V1C-JP12T	Samsung	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0			.0007 Amp		12 ns
K6R4008V1C-JC150	Samsung	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	135 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36	3				Not Qualified	4194304 bit				240		.01 Amp		15 ns
K6R4008V1C-JC10	Samsung	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0			.01 Amp	23.5 mm	10 ns
KM684002LJ-25	Samsung	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS AND OUTPUTS	e0		YES	.0002 Amp	23.5 mm	25 ns
K6R4008C1C-JI15T	Samsung	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0			.01 Amp		15 ns
KM68V4002BT-10	Samsung	STANDARD SRAM	COMMERCIAL	36	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP36,.46,40	SRAMs	1 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G36		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0			.01 Amp	18.41 mm	10 ns
KM684002J-20	Samsung	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0		YES	.01 Amp	23.5 mm	20 ns
KM68U4100CLZI-10L	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B36		3.3 V	.94 mm	6.1 mm	Not Qualified	4194304 bit	2.7 V		e0			.00002 Amp	8.9 mm	100 ns
K6R4008V1B-JL10T	Samsung	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	205 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0			.0007 Amp		10 ns
KM68V4002AJ-17	Samsung	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0			.01 Amp		17 ns
KM684002AJI-17	Samsung	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			.01 Amp	23.5 mm	17 ns
KM684002BIJ-12	Samsung	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS					23.5 mm	12 ns
KM68B4002AJ-12	Samsung	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	200 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0			.01 Amp		12 ns
MT5LC512K8D4DJ-35LP	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	145 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36		3.63 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	3 V		e0		YES	.0007 Amp	23.52 mm	35 ns
MT5C512K8B2DJ20	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	175 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0			.002 Amp		20 ns
MT5C512K8B2TG-15PXT	Micron Technology	STANDARD SRAM	MILITARY	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		512KX8	512K		-55 Cel	MATTE TIN	DUAL	1	R-PDSO-G36		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3		YES		23.52 mm	15 ns
MT5C4108DJ-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		23.52 mm	15 ns
MT5C512K8B2TG20	Micron Technology	STANDARD SRAM	COMMERCIAL	36	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	175 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP36,.46	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G36					Not Qualified	4194304 bit			e0			.002 Amp		20 ns
MT5C512K8B2TG-12L	Micron Technology	STANDARD SRAM	COMMERCIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP36,.46	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0		YES	.001 Amp	23.49 mm	12 ns
MT5C512K8B2DJ-25L	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V		e0		YES	.001 Amp	23.52 mm	25 ns
MT5C512K8B2DJ-12PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		512KX8	512K		-40 Cel		DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		23.52 mm	12 ns
MT5C4108DJ-12LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		23.52 mm	12 ns
MT5C512K8B2DJ12LP	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0			.001 Amp		12 ns
MT5C512K8B2TG-25P	Micron Technology	STANDARD SRAM	COMMERCIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP36,.46	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0		YES	.002 Amp	23.49 mm	25 ns
MT5LC512K8D4TG-15PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3		YES		23.52 mm	15 ns
MT5C512K8B2TG-35PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3		YES		23.52 mm	35 ns
MT5C512K8B2TG-35PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3		YES		23.52 mm	35 ns
MT5C4108DJ-12LXT	Micron Technology	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-55 Cel		DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		23.52 mm	12 ns
MT5LC512K8D4DJ-20LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36		3.6 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	3 V		e0		YES		23.52 mm	20 ns
MT5LC512K8D4TG-20LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0		YES		23.52 mm	20 ns
MT5LC512K8D4DJ-20PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		512KX8	512K		-40 Cel		DUAL	1	R-PDSO-J36		3.6 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	3 V				YES		23.52 mm	20 ns
MT5C512K8B2DJ-25LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		23.52 mm	25 ns
MT5C512K8B2TG-15PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3		YES		23.52 mm	15 ns
MT5C512K8B2TG-15L	Micron Technology	STANDARD SRAM	COMMERCIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP36,.46	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0		YES	.001 Amp	23.49 mm	15 ns
MT5LC512K8D4TG-25	Micron Technology	STANDARD SRAM	COMMERCIAL	36	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP36,.46	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G36					Not Qualified	4194304 bit			e0			.001 Amp		25 ns
MT5LC512K8D4DJ-25LP	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36		3.63 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	3 V		e0		YES	.0007 Amp	23.52 mm	25 ns
MT5C4108DJ-15LXT	Micron Technology	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-55 Cel		DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		23.52 mm	15 ns
MT5C4108DJ-12LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		23.52 mm	12 ns
MT5C4108DJ-12LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V				YES		23.52 mm	12 ns
MT5C512K8B2TG-12LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3		YES		23.52 mm	12 ns
MT5LC512K8D4TG-35LP	Micron Technology	STANDARD SRAM	COMMERCIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP36,.46	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36		3.63 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0		YES	.0007 Amp	23.52 mm	35 ns
MT5LC512K8D4TG-35PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3		YES		23.52 mm	35 ns
MT5LC512K8D4DJ-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-J36		3.6 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	3 V				YES		23.52 mm	35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.