36 SRAM 982

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1049GN30-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	3		8	SMALL OUTLINE	SOJ36,.44		1.27 mm	85 Cel		3-STATE	512KX8	512K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J36	3	3.6 V	3.7592 mm	10.16 mm		4194304 bit	2.2 V				260	YES	.008 Amp	23.495 mm	10 ns
CY7C1049GN30-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	3		8	SMALL OUTLINE	SOJ36,.44		1.27 mm	85 Cel		3-STATE	512KX8	512K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J36	3	3.6 V	3.7592 mm	10.16 mm		4194304 bit	2.2 V				260	YES	.008 Amp	23.495 mm	10 ns
CY7C1049G30-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel			512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.7592 mm	10.16 mm		4194304 bit	2.2 V				260			23.495 mm	10 ns
CY7C1049G30-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel			512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.7592 mm	10.16 mm		4194304 bit	2.2 V			40	260			23.495 mm	10 ns
CY7C1049D-10VXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-J36	3	5.5 V	3.7592 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e4	40	260		.01 Amp	23.495 mm	10 ns
AS7C4096A-12JIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	4.5 V	-40 Cel	TIN	DUAL		R-PDSO-J36	3	5.5 V	3.7592 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3	40	245		.01 Amp	23.495 mm	12 ns
CY62148EV30LL-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B36	3	3.6 V	1 mm	6 mm	Not Qualified	4194304 bit	2.2 V		e1	20	260	YES	.000007 Amp	8 mm	45 ns
AS6C4008-55BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	3/5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		BOTTOM		R-PBGA-B36	3	5.5 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V						.00003 Amp	8 mm	55 ns
CY62148EV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B36	3	3.6 V	1 mm	6 mm	Not Qualified	4194304 bit	2.2 V		e1		260	YES	.000007 Amp	8 mm	45 ns
CY7C1049CV33-12VC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36		3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	23.495 mm	12 ns
DS1270Y-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel			2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-PDMA-P36		5.5 V			Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION	e0						70 ns
DS1270Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2097152 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	85 Cel		3-STATE	2MX8	2M		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDMA-P36		5.5 V			Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION PERIOD	e0			YES	.00015 Amp		70 ns
DS1270Y-70IND#	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	IN-LINE			2.54 mm	85 Cel			2MX8	2M		-40 Cel		DUAL		R-PDIP-P36		5.5 V	10.922 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION		NOT SPECIFIED	NOT SPECIFIED			53.213 mm	70 ns
CY7C1049D-10VXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-J36	3	5.5 V	3.7592 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e4	40	260		.01 Amp	23.495 mm	10 ns
71V424L12YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.495 mm	12 ns
71V424L15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.495 mm	15 ns
IDT71V424L12YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-J36		3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3					23.495 mm	12 ns
IS61LV5128AL-10KLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	95 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	3.14 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J36		3.63 V	3.75 mm	10.16 mm	Not Qualified	4194304 bit	3.135 V		e3	10	260		.02 Amp	23.495 mm	10 ns
AS7C34096A-12JIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			512KX8	512K		-40 Cel		DUAL		R-PDSO-J36	3	3.6 V	3.7592 mm	10.16 mm		4194304 bit	3 V		e3/e6					23.495 mm	12 ns
DS1270W-100-IND	Dallas Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	2097152 words		3.3	3.3	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	85 Cel			2MX8	2M		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T36					Not Qualified	16777216 bit			e0				.0002 Amp		100 ns
DS1270W-100IND#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	IN-LINE			2.54 mm	85 Cel			2MX8	2M		-40 Cel	MATTE TIN	DUAL		R-PDIP-P36		3.6 V	10.922 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e3					53.213 mm	100 ns
DS1270W-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel			2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-XDMA-P36		3.6 V			Not Qualified	16777216 bit	3 V		e0						100 ns
IS63LV1024L-12BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B36	3	3.45 V	1.2 mm	8 mm	Not Qualified	1048576 bit	3.15 V		e1	10	260		.0015 Amp	10 mm	12 ns
71V424L10YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V			Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp		10 ns
71V424L15YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.5 mm	15 ns
71V424S12YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.495 mm	12 ns
AS7C34096A-12JINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			512KX8	512K		-40 Cel		DUAL		R-PDSO-J36	3	3.6 V	3.7592 mm	10.16 mm		4194304 bit	3 V		e3/e6					23.495 mm	12 ns
IDT71V424L15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-J36		3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3					23.495 mm	15 ns
IDT71V424S12YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-J36		3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3					23.495 mm	12 ns
CY62138FV30LL-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX8	256K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B36	3	3.6 V	1 mm	6 mm	Not Qualified	2097152 bit	2.2 V		e1	20	260		.000004 Amp	8 mm	45 ns
CY7C1049DV33-10VXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	3.3		8	SMALL OUTLINE	SOJ36,.44		1.27 mm	85 Cel	NO	3-STATE	512KX8	512K	3 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	1	R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e4	40	260	YES	.01 Amp	23.495 mm	10 ns
TMS4C2973DT-26	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		3.3		12	SMALL OUTLINE, SHRINK PITCH			1 mm	70 Cel			240KX12	240K		0 Cel		DUAL		R-PDSO-G36		3.6 V	3 mm	9.9 mm	Not Qualified	2949120 bit	3 V							18.4 mm	21 ns
5962-9560006M8X	Texas Instruments	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel			512KX8	512K		-55 Cel	TIN LEAD	DUAL		R-XDSO-J36		5.5 V	2.79 mm	10.795 mm	Not Qualified	4194304 bit	4.5 V		e0					23.37 mm	35 ns
5962-9560004M8X	Texas Instruments	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel			512KX8	512K		-55 Cel	TIN LEAD	DUAL		R-XDSO-J36		5.5 V	2.79 mm	10.795 mm	Not Qualified	4194304 bit	4.5 V		e0					23.37 mm	20 ns
SMJ684002-25HKE	Texas Instruments	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		524288 words		5		8	FLATPACK				125 Cel		3-STATE	512KX8	512K		-55 Cel		DUAL	1	R-CDFP-F36		5.5 V			Not Qualified	4194304 bit	4.5 V					YES			25 ns
SMJ684002-20HJA	Texas Instruments	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE				125 Cel		3-STATE	512KX8	512K		-55 Cel		DUAL	1	R-CDSO-J36		5.5 V			Not Qualified	4194304 bit	4.5 V					YES			20 ns
5962-9560006MTA	Texas Instruments	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	225 mA	524288 words	COMMON	5	5	8	FLATPACK	FL36,.5	SRAMs	1.27 mm	125 Cel		3-STATE	512KX8	512K	2 V	-55 Cel		DUAL		R-XDFP-F36		5.5 V	3.18 mm	12.954 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.002 Amp	23.365 mm	35 ns
5962-9560004M8A	Texas Instruments	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	225 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	125 Cel		3-STATE	512KX8	512K	4.5 V	-55 Cel		DUAL		R-XDSO-J36		5.5 V	2.79 mm	10.795 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.025 Amp	23.37 mm	20 ns
SMJ684002-20HKE	Texas Instruments	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		524288 words		5		8	FLATPACK				125 Cel		3-STATE	512KX8	512K		-55 Cel		DUAL	1	R-CDFP-F36		5.5 V			Not Qualified	4194304 bit	4.5 V					YES			20 ns
TMS4C2973-24DTL	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		3.3		12	SMALL OUTLINE, SHRINK PITCH			1 mm	70 Cel			240KX12	240K		0 Cel		DUAL		R-PDSO-G36		3.6 V	3 mm	9.9 mm	Not Qualified	2949120 bit	3 V							18.4 mm	19 ns
5962-9560007M8X	Texas Instruments	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel			512KX8	512K		-55 Cel	TIN LEAD	DUAL		R-XDSO-J36		5.5 V	2.79 mm	10.795 mm	Not Qualified	4194304 bit	4.5 V		e0					23.37 mm	25 ns
SMJ684002-25HJA	Texas Instruments	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE				125 Cel		3-STATE	512KX8	512K		-55 Cel		DUAL	1	R-CDSO-J36		5.5 V			Not Qualified	4194304 bit	4.5 V					YES			25 ns
5962-9560004MTA	Texas Instruments	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	225 mA	524288 words	COMMON	5	5	8	FLATPACK	FL36,.5	SRAMs	1.27 mm	125 Cel		3-STATE	512KX8	512K	4.5 V	-55 Cel		DUAL		R-XDFP-F36		5.5 V	3.18 mm	12.954 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.025 Amp	23.365 mm	20 ns
TMS4C2973DT-24	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		3.3		12	SMALL OUTLINE, SHRINK PITCH			1 mm	70 Cel			240KX12	240K		0 Cel		DUAL		R-PDSO-G36		3.6 V	3 mm	9.9 mm	Not Qualified	2949120 bit	3 V							18.4 mm	19 ns
5962-9560003MTX	Texas Instruments	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		524288 words		5		8	FLATPACK			1.27 mm	125 Cel			512KX8	512K		-55 Cel		DUAL		R-XDFP-F36		5.5 V	3.18 mm	12.954 mm	Not Qualified	4194304 bit	4.5 V							23.365 mm	25 ns
5962-9560004MTX	Texas Instruments	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		524288 words		5		8	FLATPACK			1.27 mm	125 Cel			512KX8	512K		-55 Cel		DUAL		R-XDFP-F36		5.5 V	3.18 mm	12.954 mm	Not Qualified	4194304 bit	4.5 V							23.365 mm	20 ns
TMS4C2972-28DT	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	50 mA	245760 words		5	5	12	SMALL OUTLINE, SHRINK PITCH	SOP36,.47,40	Other Memory ICs	1 mm	70 Cel			240KX12	240K		0 Cel		DUAL		R-PDSO-G36		5.5 V	3 mm	9.9 mm	Not Qualified	2949120 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.015 Amp	18.4 mm	23 ns
SMJ684002-35HJA	Texas Instruments	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE				125 Cel		3-STATE	512KX8	512K		-55 Cel		DUAL	1	R-CDSO-J36		5.5 V			Not Qualified	4194304 bit	4.5 V					YES			35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.