36 SRAM 982

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
DS1265Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	TIN LEAD	DUAL		R-XDMA-P36	5.5 V	10.29 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0				.00015 Amp	53.085 mm	100 ns
DS1265W-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	85 Cel		1MX8	1M		-40 Cel	TIN LEAD	DUAL		R-XDMA-T36	3.6 V			Not Qualified	8388608 bit	3 V		e0				.00015 Amp		150 ns
DS1265Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	TIN LEAD	DUAL		R-XDMA-P36	5.5 V	10.29 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0				.00015 Amp	53.085 mm	70 ns
DS1265W-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	TIN LEAD	DUAL		R-XDMA-P36	3.6 V			Not Qualified	8388608 bit	3 V		e0				.00015 Amp		150 ns
DS1270W-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-XDMA-P36	3.6 V			Not Qualified	16777216 bit	3 V		e0						150 ns
DS1270AB-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2097152 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	85 Cel		2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-PDMA-P36	5.25 V			Not Qualified	16777216 bit	4.75 V	5 YEAR DATA RETENTION PERIOD	e0				.00015 Amp		100 ns
DS1270AB-70IND#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	IN-LINE			2.54 mm	85 Cel		2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-PDIP-P36	5.25 V	10.922 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V	5 YEAR DATA RETENTION	e0					53.213 mm	70 ns
DS1265W-100IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	85 Cel		1MX8	1M		-40 Cel	MATTE TIN	DUAL		R-XDMA-P36	3.6 V			Not Qualified	8388608 bit	3 V		e3				.00015 Amp		100 ns
DS1270Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDMA-P36	5.5 V			Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION	e0						100 ns
DS1265AB-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	TIN LEAD	DUAL		R-XDMA-P36	5.25 V	10.29 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V	10 YEAR DATA RETENTION PERIOD	e0				.00015 Amp	53.085 mm	100 ns
DS1265AB-70+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	MATTE TIN	DUAL		R-XDMA-P36	5.25 V			Not Qualified	8388608 bit	4.75 V		e3				.0002 Amp		70 ns
DS1265W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	TIN LEAD	DUAL		R-XDMA-P36	3.6 V			Not Qualified	8388608 bit	3 V		e0				.00015 Amp		100 ns
DS1270W-150#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		2MX8	2M		0 Cel	MATTE TIN	DUAL		R-XDMA-P36	3.6 V			Not Qualified	16777216 bit	3 V		e3						150 ns
DS1265AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	TIN LEAD	DUAL		R-XDMA-P36	5.25 V	10.29 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V	10 YEAR DATA RETENTION PERIOD	e0				.00015 Amp	53.085 mm	70 ns
DS1265AB-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	85 Cel		1MX8	1M		-40 Cel	TIN LEAD	DUAL		R-XDMA-P36	5.25 V			Not Qualified	8388608 bit	4.75 V		e0				.00015 Amp		70 ns
DS1270AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDMA-P36	5.25 V			Not Qualified	16777216 bit	4.75 V	5 YEAR DATA RETENTION	e0						70 ns
DS1270AB-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	IN-LINE			2.54 mm	70 Cel		2MX8	2M		0 Cel	MATTE TIN	DUAL		R-PDIP-P36	5.25 V	10.922 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V	5 YEAR DATA RETENTION	e3					53.213 mm	70 ns
DS1265W-150+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	Matte Tin (Sn)	DUAL		R-XDMA-P36	3.6 V			Not Qualified	8388608 bit	3 V		e3				.00015 Amp		150 ns
DS1265W-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	85 Cel		1MX8	1M		-40 Cel	TIN LEAD	DUAL		R-XDMA-P36	3.6 V			Not Qualified	8388608 bit	3 V		e0				.00015 Amp		100 ns
TC55VZM208AJJN08	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	23.5 mm	8 ns
TC55VZM208AJGI10	Toshiba	CACHE SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V							23.5 mm	10 ns
TC55V8512J-12(EL)	Toshiba	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36				Not Qualified	4194304 bit			e0				.004 Amp		12 ns
TC55V8512J-15(EL)	Toshiba	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36				Not Qualified	4194304 bit			e0				.004 Amp		15 ns
TC55BS8125J-10	Toshiba	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0					23.5 mm	5 ns
TC554101J-30	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	1048576 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36	5.5 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	23.5 mm	30 ns
TC55VZM208AJGN12	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V						.004 Amp	23.5 mm	12 ns
TC55VZM208AJJN12	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	23.5 mm	12 ns
TC55VZM208AJGI12	Toshiba	CACHE SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V							23.5 mm	12 ns
TC55V8512JI-12	Toshiba	CACHE SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	23.5 mm	12 ns
TC55V8512JI-15	Toshiba	CACHE SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel		DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.01 Amp	23.5 mm	15 ns
TC55VZM208AJGN10	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V						.004 Amp	23.5 mm	10 ns
TC554101J-20	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36	5.5 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	23.5 mm	20 ns
TC559128AJ-20	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		9	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	128KX9	128K		0 Cel		DUAL	1	R-PDSO-J36	5.5 V	3.7 mm	10.16 mm	Not Qualified	1179648 bit	4.5 V					YES		23.5 mm	20 ns
TC55VZM208AJJN10	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	23.5 mm	10 ns
TC55BS4258J-10	Toshiba	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		262144 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		256KX8	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	5.5 V	3.7 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V		e0					23.5 mm	5 ns
TC55BS8125J-12	Toshiba	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0					23.5 mm	6 ns
TC55VZM208AJJI10	Toshiba	CACHE SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	23.5 mm	10 ns
TC55V8512J-15	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	23.5 mm	15 ns
TC55VZM208AJGN08	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V						.004 Amp	23.5 mm	8 ns
TC55VZM208AJJI12	Toshiba	CACHE SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	23.5 mm	12 ns
TC55VZM208AJJI08	Toshiba	CACHE SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	23.5 mm	8 ns
TC55VZM208AJGI08	Toshiba	CACHE SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V							23.5 mm	8 ns
TC55V8512J-12	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	23.5 mm	12 ns
TC55V8512J-20	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.004 Amp	23.5 mm	20 ns
TC559128AJ-15	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		9	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	128KX9	128K		0 Cel		DUAL	1	R-PDSO-J36	5.5 V	3.7 mm	10.16 mm	Not Qualified	1179648 bit	4.5 V					YES		23.5 mm	15 ns
TC55BS4258J-12	Toshiba	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		262144 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		256KX8	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	5.5 V	3.7 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V		e0					23.5 mm	6 ns
TC554101J-25	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36	5.5 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	23.5 mm	25 ns
TC55V8512JI-15(EL)	Toshiba	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36				Not Qualified	4194304 bit			e0				.01 Amp		15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.