36 SRAM 982

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
71V424L12YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.495 mm	12 ns
HM629127HLJP-17	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		9	SMALL OUTLINE			1.27 mm	70 Cel		128KX9	128K		0 Cel		DUAL		R-PDSO-J36		5.5 V	4.39 mm		10.16 mm	Not Qualified	1179648 bit	4.5 V							23.25 mm	17 ns
IDT7MP4008S40S	Renesas Electronics	SRAM MODULE	COMMERCIAL	36			PLASTIC/EPOXY	NO		CMOS		PARALLEL	ASYNCHRONOUS		524288 words	COMMON	5	5	8		SIP36	SRAMs		70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	TIN LEAD	SINGLE								Not Qualified	4194304 bit			e0						40 ns
IDT71V424S10YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.495 mm	10 ns
IDT71V424S10YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-J36		3.6 V	3.683 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3					23.495 mm	10 ns
UPD434008ALLE-A12	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36						Not Qualified	4194304 bit			e0				.005 Amp		12 ns
HM628511HJPI-15	Renesas Electronics	CACHE SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V							23.25 mm	15 ns
HM62W8511HLJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS						23.25 mm	10 ns
UPD444008LLE-A12-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36		3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.005 Amp	23.6 mm	12 ns
IDT71V424L12YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.495 mm	12 ns
UPD431009LLE-A17	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	3.3	3.3	9	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX9	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36						Not Qualified	1179648 bit			e0				.005 Amp		17 ns
71V424S12YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.5 mm	12 ns
UPD434008ALE-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36						Not Qualified	4194304 bit			e0				.01 Amp		20 ns
UPD434008LE-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36						Not Qualified	4194304 bit			e0				.01 Amp		25 ns
71V424S12YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.5 mm	12 ns
71V424L12YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.5 mm	12 ns
HM628511HLJP-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0				.0003 Amp	23.25 mm	15 ns
UPD444008LLE-A10	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36		3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.005 Amp	23.6 mm	10 ns
HM62W8201HJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V							23.25 mm	10 ns
R1RP0408DGE-2PI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36	2	5.5 V	3.55 mm		10.16 mm		4194304 bit	4.5 V							23.49 mm	12 ns
R1RP0408DGE-2LR	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-J36	2	5.5 V	3.55 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V			20	245			23.49 mm	12 ns
K6T2008V2A-FF850	Samsung	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX8	256K		-40 Cel		BOTTOM		R-PBGA-B36		3.6 V	1.2 mm		6 mm	Not Qualified	2097152 bit	3 V							7 mm	85 ns
KM741006J-12.5	Samsung	STANDARD SRAM		36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm			256KX4	256K				DUAL		R-PDSO-J36			3.76 mm		10.16 mm	Not Qualified	1048576 bit								23.5 mm	12.5 ns
K6F4008R2C-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON		1.8/2	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B36						Not Qualified	4194304 bit			e0						85 ns
K6F4008S2D-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	2.5	2.5	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B36						Not Qualified	4194304 bit			e0				.000003 Amp		85 ns
K6F4008U2F-EF45	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX8	512K		-40 Cel		BOTTOM		R-PBGA-B36		3.3 V	1 mm		6 mm	Not Qualified	4194304 bit	2.7 V							7 mm	45 ns
K6T4008V2C-ZF85	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B36		3.6 V	.94 mm		6.1 mm	Not Qualified	4194304 bit	3 V		e0					8.9 mm	85 ns
K6T2008V2A-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3.3	3.3	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B36						Not Qualified	2097152 bit			e0						70 ns
K6T2008S2A-FF85	Samsung	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		2.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX8	256K		-40 Cel		BOTTOM		R-PBGA-B36		2.7 V	1.2 mm		6 mm	Not Qualified	2097152 bit	2.3 V							7 mm	85 ns
K6F4008S2F-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX8	512K		-40 Cel		BOTTOM		R-PBGA-B36		2.7 V	1 mm		6 mm	Not Qualified	4194304 bit	2.3 V							7 mm	70 ns
K6F4008S2C-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	2.5	2.5	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B36						Not Qualified	4194304 bit			e0				.000003 Amp		85 ns
K6F4008U2E-EF70T	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B36	3	3.3 V	1 mm		6 mm	Not Qualified	4194304 bit	2.7 V		e0				.000003 Amp	7 mm	70 ns
K6F4008S2C-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	2.5	2.5	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B36						Not Qualified	4194304 bit			e0				.000003 Amp		70 ns
K6T2008U2A-FF700	Samsung	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX8	256K		-40 Cel		BOTTOM		R-PBGA-B36		3.3 V	1.2 mm		6 mm	Not Qualified	2097152 bit	2.7 V							7 mm	70 ns
KM74B4006J-15	Samsung	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	180 mA	1048576 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	66.7 MHz	10.16 mm	Not Qualified	4194304 bit	4.5 V	SELF-TIMED WRITE	e0			YES		23.5 mm	7 ns
K6T2008V2A-FF700	Samsung	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX8	256K		-40 Cel		BOTTOM		R-PBGA-B36		3.6 V	1.2 mm		6 mm	Not Qualified	2097152 bit	3 V							7 mm	70 ns
K6F4008U2G-EF550	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX8	512K		-40 Cel		BOTTOM		R-PBGA-B36		3.3 V	1 mm		6 mm	Not Qualified	4194304 bit	2.7 V							7 mm	55 ns
KM74B4006J-10	Samsung	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	190 mA	1048576 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	100 MHz	10.16 mm	Not Qualified	4194304 bit	4.5 V	SELF-TIMED WRITE	e0			YES		23.5 mm	5 ns
K6F2008U2E-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX8	256K		-40 Cel		BOTTOM		R-PBGA-B36		3.3 V	1 mm		6 mm	Not Qualified	2097152 bit	2.7 V							7 mm	70 ns
K6F4008U2E-EF70	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B36		3.3 V	1 mm		6 mm	Not Qualified	4194304 bit	2.7 V		e0				.000003 Amp	7 mm	70 ns
K6F4008U2E-EF55T	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B36	3	3.3 V	1 mm		6 mm	Not Qualified	4194304 bit	2.7 V		e0				.000003 Amp	7 mm	55 ns
K6F4008R2D-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON		1.8/2	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B36						Not Qualified	4194304 bit			e0						70 ns
KM741006J-12	Samsung	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	180 mA	262144 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	4.75 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36		5.25 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.75 V	SELF-TIMED WRITE	e0			YES	.04 Amp	23.5 mm	7 ns
K6F4008R2G-EF850	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX8	512K		-40 Cel		BOTTOM		R-PBGA-B36		1.95 V	1 mm		6 mm	Not Qualified	4194304 bit	1.65 V							7 mm	85 ns
K6F4008U2E-EF55	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B36		3.3 V	1 mm		6 mm	Not Qualified	4194304 bit	2.7 V		e0				.000003 Amp	7 mm	55 ns
K6F2008U2E-EF550	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX8	256K		-40 Cel		BOTTOM		R-PBGA-B36		3.3 V	1 mm		6 mm	Not Qualified	2097152 bit	2.7 V							7 mm	55 ns
K6T2008V2A-FF70	Samsung	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B36		3.6 V	1.2 mm		6 mm	Not Qualified	2097152 bit	3 V		e0					7 mm	70 ns
K6F4008R2F-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX8	512K		-40 Cel		BOTTOM		R-PBGA-B36		2.2 V	1 mm		6 mm	Not Qualified	4194304 bit	1.65 V							7 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.