36 SRAM 982

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

K6R4008V1D-KC10

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

TIN SILVER COPPER

DUAL

R-PDSO-J36

3

Not Qualified

4194304 bit

e1

260

.005 Amp

10 ns

KM684002JI-25

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J36

3

Not Qualified

4194304 bit

e0

.01 Amp

25 ns

K6R4008V1D-JI10

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

75 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J36

3

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

240

.005 Amp

23.5 mm

10 ns

KM68V4002CJI-15

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.01 Amp

23.5 mm

15 ns

KM684002J-25

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

4.5 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

YES

.01 Amp

23.5 mm

25 ns

KM68B4002J-15T

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

DUAL

1

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

YES

23.5 mm

15 ns

KM684002AJI-15

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

.01 Amp

23.5 mm

15 ns

K6R4008V1B-TI10

Samsung

STANDARD SRAM

INDUSTRIAL

36

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

205 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP36,.46,40

SRAMs

1 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G36

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.01 Amp

18.41 mm

10 ns

KM68V4002BIJ-12

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

TTL COMPATIBLE INPUTS/OUTPUTS

23.5 mm

12 ns

K6R4008V1C-JP15

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.0007 Amp

23.5 mm

15 ns

KM68V4002BJI-12

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.01 Amp

23.5 mm

12 ns

K6R4008V1B-TI12T

Samsung

STANDARD SRAM

INDUSTRIAL

36

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

200 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP36,.46,40

SRAMs

1 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G36

Not Qualified

4194304 bit

e0

.01 Amp

12 ns

KM684002CIJ-15

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

23.5 mm

15 ns

KM684002CJ-20

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

185 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

.02 Amp

23.5 mm

20 ns

K6R4008C1D-JI10

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

75 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

4.5 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

3

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

30

240

.005 Amp

23.5 mm

10 ns

K6R4008C1B-JC12

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

205 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

.01 Amp

23.5 mm

12 ns

K6R4008C1D-KI10

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

75 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

4.5 V

-40 Cel

Tin/Bismuth (Sn97Bi3)

DUAL

R-PDSO-J36

3

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e6

40

260

.005 Amp

23.5 mm

10 ns

K6R4008V1B-TP15

Samsung

STANDARD SRAM

INDUSTRIAL

36

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

195 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP36,.46,40

SRAMs

1 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G36

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.0007 Amp

18.41 mm

15 ns

KM684002A-15

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

DUAL

1

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

YES

23.5 mm

15 ns

K6R4008V1B-JI10T

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

205 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

Not Qualified

4194304 bit

e0

.01 Amp

10 ns

KM684002CJE-1000

Samsung

STANDARD SRAM

OTHER

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

512KX8

512K

-25 Cel

DUAL

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

23.5 mm

10 ns

KM68V4002BT-15

Samsung

STANDARD SRAM

COMMERCIAL

36

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP36,.46,40

SRAMs

1 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G36

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.01 Amp

18.41 mm

15 ns

K6R4008V1B-TL15T

Samsung

STANDARD SRAM

COMMERCIAL

36

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

195 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP36,.46,40

SRAMs

1 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G36

Not Qualified

4194304 bit

e0

.0007 Amp

15 ns

KM684002BT-12000

Samsung

STANDARD SRAM

COMMERCIAL

36

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G36

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

18.41 mm

12 ns

KM684002JE-25

Samsung

STANDARD SRAM

OTHER

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

4.5 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-J36

3

Not Qualified

4194304 bit

e0

.01 Amp

25 ns

K6R4008V1B-JL12T

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

Not Qualified

4194304 bit

e0

.0007 Amp

12 ns

KM68B4002J-13

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

195 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

4.5 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

YES

.03 Amp

23.5 mm

13 ns

K6R4008C1B-JI10

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

210 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

.01 Amp

23.5 mm

10 ns

KM684002JI-17

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

180 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J36

3

Not Qualified

4194304 bit

e0

.01 Amp

17 ns

KM68V4002CLJI-10

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.0007 Amp

23.5 mm

10 ns

K6R4008V1C-JI150

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

DUAL

R-PDSO-J36

3

Not Qualified

4194304 bit

240

.01 Amp

15 ns

KM68V4002BLIJ-15

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

TTL COMPATIBLE INPUTS/OUTPUTS

23.5 mm

15 ns

KM68V4002CJ-1500

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

23.5 mm

15 ns

K6R4008V1C-JL12T

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

145 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J36

Not Qualified

4194304 bit

e0

.0007 Amp

12 ns

K6R4008V1C-JI120

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

DUAL

R-PDSO-J36

3

Not Qualified

4194304 bit

240

.01 Amp

12 ns

K6R4008V1C-JI12T

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J36

Not Qualified

4194304 bit

e0

.01 Amp

12 ns

K6R4008C1C-JC10T

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J36

Not Qualified

4194304 bit

e0

.01 Amp

10 ns

K6R4008C1A-JE15T

Samsung

STANDARD SRAM

OTHER

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

4.5 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

Not Qualified

4194304 bit

e0

.01 Amp

15 ns

K6R4008V1B-TC10T

Samsung

STANDARD SRAM

COMMERCIAL

36

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

205 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP36,.46,40

SRAMs

1 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G36

Not Qualified

4194304 bit

e0

.01 Amp

10 ns

KM68V4100CLZI-8L

Samsung

STANDARD SRAM

INDUSTRIAL

36

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

3.3

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA36,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B36

3.6 V

.94 mm

6.1 mm

Not Qualified

4194304 bit

3 V

e0

.00002 Amp

8.9 mm

85 ns

K6R4008C1B-TC12T

Samsung

STANDARD SRAM

COMMERCIAL

36

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

205 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP36,.46

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G36

Not Qualified

4194304 bit

e0

.01 Amp

12 ns

K6R4008V1C-JL10T

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J36

Not Qualified

4194304 bit

e0

.0007 Amp

10 ns

KM684002AJE-20

Samsung

STANDARD SRAM

OTHER

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

4.5 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

.01 Amp

23.5 mm

20 ns

K6R4008V1B-TI10T

Samsung

STANDARD SRAM

INDUSTRIAL

36

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

205 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP36,.46,40

SRAMs

1 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G36

Not Qualified

4194304 bit

e0

.01 Amp

10 ns

KM684002BIJ-15

Samsung

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

TTL COMPATIBLE INPUTS/OUTPUTS

23.5 mm

15 ns

KM68V4002CLJ-15

Samsung

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

135 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.0007 Amp

23.5 mm

15 ns

K6R4008C1C-JE12

Samsung

STANDARD SRAM

OTHER

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

175 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

4.5 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

.01 Amp

23.5 mm

12 ns

KM68BV4002J-10

Samsung

STANDARD SRAM

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE

1.27 mm

512KX8

512K

DUAL

R-PDSO-J36

3.76 mm

10.16 mm

Not Qualified

4194304 bit

23.5 mm

10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.