36 SRAM 982

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
UPD434008ALLE-A17	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36					Not Qualified	4194304 bit							.005 Amp		17 ns
HM628511HLJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS						23.25 mm	10 ns
HM62W8511HCLJPI-12	Renesas Electronics	CACHE SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V							23.25 mm	12 ns
UPD431009LLE-A20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	9	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX9	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	1179648 bit			e0				.005 Amp		20 ns
71V424L10YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.5 mm	10 ns
IDT71V424L10YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.495 mm	10 ns
71V424S10YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.495 mm	10 ns
HM628511HCJPI-12	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							23.25 mm	12 ns
HM628511HCJP-12	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel		DUAL		R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						.005 Amp	23.25 mm	12 ns
UPD441000LF1-BA1-B70X	Renesas Electronics	STANDARD SRAM	OTHER	36	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON		3/3.3	8	GRID ARRAY	BGA36,6X6,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B36					Not Qualified	1048576 bit			e0				.0003 Amp		70 ns
71V424S12YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.495 mm	12 ns
HM628511HCLJP-10	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-J36					Not Qualified	4194304 bit									10 ns
HM62W8201HJP-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V							23.25 mm	12 ns
UPD441000LF1-BA1-D15X	Renesas Electronics	STANDARD SRAM	OTHER	36	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON		2/3.3	8	GRID ARRAY	BGA36,6X6,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	1.5 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B36					Not Qualified	1048576 bit			e0				.0003 Amp		150 ns
71V424S15YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.495 mm	15 ns
HM62W8201HLJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V							23.25 mm	10 ns
HM62W8511HJP-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS					.01 Amp	23.25 mm	12 ns
UPD444008LE-8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel		DUAL		R-PDSO-J36	1	5.5 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						.01 Amp	23.6 mm	8 ns
HM62W8511HJP-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS					.01 Amp	23.25 mm	15 ns
IDT71V424S10YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel	MATTE TIN	DUAL		R-PDSO-J36		3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3					23.495 mm	10 ns
IDT71V424S12YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260	YES	.02 Amp	23.495 mm	12 ns
71V424L10YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.495 mm	10 ns
UPD431009LE-17	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	5	5	9	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX9	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	1179648 bit			e0				.01 Amp		17 ns
UPD441000LF1-BA1-C10X	Renesas Electronics	STANDARD SRAM	OTHER	36	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON		2.2/3.6	8	GRID ARRAY	BGA36,6X6,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	1.5 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B36					Not Qualified	1048576 bit			e0				.0003 Amp		100 ns
IDT71V424L15YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	145 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.495 mm	15 ns
71V424L15YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	145 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.5 mm	15 ns
R1RP0408DGE-0PR	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel		DUAL		R-PDSO-J36		5.5 V			Not Qualified	4194304 bit	4.5 V						.005 Amp		12 ns
UPD434008ALE-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0				.01 Amp		15 ns
HM62W8201HJP-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V							23.25 mm	15 ns
R1RP0408DGE-2PI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	4.5 V	-40 Cel		DUAL		R-PDSO-J36	2	5.5 V	3.55 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						.005 Amp	23.49 mm	12 ns
UPD444008LLE-A8-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	185 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36		3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.005 Amp	23.6 mm	8 ns
UPD44008LLE-A12	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36		3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.005 Amp	23.6 mm	12 ns
HM628511HLJP-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0				.0003 Amp	23.25 mm	12 ns
UPD431009LE-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	9	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX9	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	1179648 bit			e0				.01 Amp		20 ns
IDT71V424L12YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.495 mm	12 ns
HM629127HJP-17	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		9	SMALL OUTLINE			1.27 mm	70 Cel		128KX9	128K		0 Cel		DUAL		R-PDSO-J36		5.5 V	4.39 mm	10.16 mm	Not Qualified	1179648 bit	4.5 V							23.25 mm	17 ns
HM62W8201HLJP-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V							23.25 mm	15 ns
IDT71V424L10YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel	MATTE TIN	DUAL		R-PDSO-J36		3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3					23.495 mm	10 ns
71V424S10YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.5 mm	10 ns
HM62W8511HLJP-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS						23.25 mm	15 ns
UPD444008LE-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0				.01 Amp		15 ns
HM62W8511HLJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS						23.25 mm	10 ns
UPD444008LLE-A12-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36		3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.005 Amp	23.6 mm	12 ns
IDT71V424L12YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	23.495 mm	12 ns
UPD431009LLE-A17	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	3.3	3.3	9	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX9	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	1179648 bit			e0				.005 Amp		17 ns
71V424S12YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.5 mm	12 ns
UPD434008ALE-20	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0				.01 Amp		20 ns
UPD434008LE-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36					Not Qualified	4194304 bit			e0				.01 Amp		25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.