36 SRAM 982

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5C512K8B2DJ35	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36				Not Qualified	4194304 bit		e0		.002 Amp		35 ns
MT5C512K8B2DJ-35LP	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36	5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V	e0	YES	.001 Amp	23.52 mm	35 ns
MT5LC512K8D4DJ-25PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		512KX8	512K		-40 Cel		DUAL	1	R-PDSO-J36	3.6 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	3 V		YES		23.52 mm	25 ns
MT5C512K8B2TG-35P	Micron Technology	STANDARD SRAM	COMMERCIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP36,.46	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	e0	YES	.002 Amp	23.49 mm	35 ns
MT5C512K8B2TG-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	e3	YES		23.52 mm	35 ns
MT5LC512K8D4TG-35PXT	Micron Technology	STANDARD SRAM	MILITARY	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		512KX8	512K		-55 Cel	MATTE TIN	DUAL	1	R-PDSO-G36	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	e3	YES		23.52 mm	35 ns
MT5LC512K8D4TG-12LXT	Micron Technology	STANDARD SRAM	MILITARY	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		512KX8	512K	2 V	-55 Cel	MATTE TIN	DUAL	1	R-PDSO-G36	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	e3	YES		23.52 mm	12 ns
MT5LC512K8D4DJ-25L	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36	3.6 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	3 V	e0	YES	.0007 Amp	23.52 mm	25 ns
MT5C512K8B2TG-12PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	e3	YES		23.52 mm	12 ns
MT5C512K8B2DJ-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-J36	5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V		YES		23.52 mm	35 ns
MT5C512K8B2TG-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	e3	YES		23.52 mm	35 ns
MT5LC512K8D4DJ-25	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36				Not Qualified	4194304 bit		e0		.001 Amp		25 ns
MT5LC512K8D4DJ-25PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	1	R-PDSO-J36	3.6 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	3 V		YES		23.52 mm	25 ns
MT5LC512K8D4TG-20PXT	Micron Technology	STANDARD SRAM	MILITARY	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		512KX8	512K		-55 Cel	MATTE TIN	DUAL	1	R-PDSO-G36	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	e3	YES		23.52 mm	20 ns
MT5LC512K8D4DJ-12PIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	1	R-PDSO-J36	3.6 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	3 V		YES		23.52 mm	12 ns
MT5LC512K8D4DJ-15LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36	3.6 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	3 V	e0	YES		23.52 mm	15 ns
MT5C512K8B2DJ-20LPTR	Micron Technology	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J36	5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V	e0	YES		23.52 mm	20 ns
MT5C512K8B2DJ-20PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		512KX8	512K		-40 Cel		DUAL	1	R-PDSO-J36	5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V		YES		23.52 mm	20 ns
MT5LC512K8D4DJ-35PXT	Micron Technology	STANDARD SRAM	MILITARY	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		512KX8	512K		-55 Cel		DUAL	1	R-PDSO-J36	3.6 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	3 V		YES		23.52 mm	35 ns
MT5C512K8B2TG-25LPTR	Micron Technology	STANDARD SRAM	COMMERCIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	e0	YES		23.52 mm	25 ns
MT5LC512K8D4TG-20LP	Micron Technology	STANDARD SRAM	COMMERCIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP36,.46	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G36	3.63 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	e0	YES	.0007 Amp	23.52 mm	20 ns
MT5C512K8B2TG-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	36	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G36	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	e3	YES		23.52 mm	15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.