36 SRAM 982

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
DS1270Y-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	IN-LINE				85 Cel		2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-PDIP-T36		5.5 V			Not Qualified	16777216 bit	4.5 V	5 YEARS OF DATA RETENTION PERIOD	e0						70 ns
DS1265Y	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		5		8	IN-LINE				70 Cel		1MX8	1M		0 Cel	TIN LEAD	DUAL		R-PDIP-T36		5.5 V			Not Qualified	8388608 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0						70 ns
DS1265Y-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P36		5.5 V			Not Qualified	8388608 bit	4.5 V		e3				.0002 Amp		70 ns
M48Z2M1Y-70PL1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2097152 words		5	5	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2MX8	2M		0 Cel		DUAL	1	R-PDIP-T36		5.5 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0	NOT SPECIFIED	NOT SPECIFIED	YES	.008 Amp	52.96 mm	70 ns
M48Z2M1V-85PL1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words		3.3	3.3	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDIP-T36		3.6 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e0				.001 Amp	52.96 mm	85 ns
M48Z2M1Y-85PL9	STMicroelectronics	NON-VOLATILE SRAM		36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	IN-LINE			2.54 mm			2MX8	2M			TIN LEAD	DUAL		R-PDIP-T36		5.5 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0					52.96 mm	85 ns
M48Z2M1-70PL9	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2097152 words		5	5	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2MX8	2M		-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T36		5.5 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V		e0			YES	.008 Amp	52.96 mm	70 ns
M48Z2M1Y-70PL9	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2097152 words		5	5	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2MX8	2M		-40 Cel		DUAL	1	R-PDIP-T36		5.5 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	YES	.008 Amp	52.96 mm	70 ns
M48Z2M1Y-85PL1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	IN-LINE			2.54 mm	70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDIP-T36		5.5 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0					52.96 mm	85 ns
M48Z2M1V-85PL9	STMicroelectronics	NON-VOLATILE SRAM		36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	IN-LINE			2.54 mm			2MX8	2M				DUAL		R-PDIP-T36		3.6 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			52.96 mm	85 ns
M48Z2M1V-70PL9	STMicroelectronics	NON-VOLATILE SRAM		36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	IN-LINE			2.54 mm			2MX8	2M			TIN LEAD	DUAL		R-PDIP-T36		3.6 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e0					52.96 mm	70 ns
M48Z2M1-70PL1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2097152 words		5	5	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2MX8	2M		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T36		5.5 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V		e0			YES	.008 Amp	52.96 mm	70 ns
M48Z2M1V-70PL1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	IN-LINE			2.54 mm	70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDIP-T36		3.6 V	9.52 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e0					52.96 mm	70 ns
SCM6946YJ8	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm		4194304 bit	3.135 V							23.495 mm	8 ns
MCM6946YJ15R	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3.135 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES		23.5 mm	15 ns
MCM6946YJ10R	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3.135 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES		23.5 mm	10 ns
MCM6946YJ10	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3.135 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES		23.5 mm	10 ns
MCM6946YJ12R	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3.135 V		e0			YES		23.5 mm	12 ns
MCM6946YJ15	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3.135 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES		23.5 mm	15 ns
MCM6946YJ12	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3.135 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES		23.5 mm	12 ns
CYRS1049DV33-12FZMB	Infineon Technologies	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	95 mA	524288 words	COMMON	3.3	3.3	8	FLATPACK	FL36,.5	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-55 Cel	GOLD OVER NICKEL	DUAL		R-CDFP-F36	1	3.6 V	2.99 mm	12.19 mm	Not Qualified	4194304 bit	3 V		e4				.015 Amp	23.37 mm	12 ns
CY7S1049GE30-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.7592 mm	10.16 mm		4194304 bit	2.2 V							23.495 mm	10 ns
CY7S1049G30-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.7592 mm	10.16 mm		4194304 bit	2.2 V							23.495 mm	10 ns
CY7S1049G30-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm	10.16 mm		4194304 bit	2.2 V							23.495 mm	10 ns
5962F1123501VXC	Infineon Technologies	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	300k Rad(Si)	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	FLATPACK			1.27 mm	125 Cel		512KX8	512K		-55 Cel	NICKEL GOLD	DUAL		R-XDFP-F36	1	3.6 V	2.99 mm	12.19 mm	Qualified	4194304 bit	3 V		e4					23.37 mm	12 ns
CYPT1049DV33-12FZMB	Infineon Technologies	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	FLATPACK			1.27 mm	125 Cel		512KX8	512K		-55 Cel	GOLD OVER NICKEL	DUAL		R-CDFP-F36	1	3.6 V	2.99 mm	12.19 mm		4194304 bit	3 V		e4					23.37 mm	12 ns
CY7S1049GE30-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm	10.16 mm		4194304 bit	2.2 V							23.495 mm	10 ns
CY7C1049G-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J36	3	5.5 V	3.7592 mm	10.16 mm		4194304 bit	4.5 V		e4	30	260			23.495 mm	10 ns
CY7C1049GN-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	5		8	SMALL OUTLINE	SOJ36,.44		1.27 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J36	3	5.5 V	3.7592 mm	10.16 mm		4194304 bit	4.5 V				260	YES	.008 Amp	23.495 mm	10 ns
CY7C1049GN-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	5		8	SMALL OUTLINE	SOJ36,.44		1.27 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J36	3	5.5 V	3.7592 mm	10.16 mm		4194304 bit	4.5 V				260	YES	.008 Amp	23.495 mm	10 ns
CY7C1010DV33-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J36	3	3.6 V	2.75 mm	10.16 mm	Not Qualified	2097152 bit	3 V		e4	40	260		.01 Amp	23.495 mm	10 ns
CY7C1049G-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36		5.5 V	3.7592 mm	10.16 mm		4194304 bit	4.5 V							23.495 mm	10 ns
CY62148EV30LL-45BVIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B36	3	3.6 V	1 mm	6 mm	Not Qualified	4194304 bit	2.2 V		e0		260		.000007 Amp	8 mm	45 ns
CY62138FV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX8	256K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B36	3	3.6 V	1 mm	6 mm	Not Qualified	2097152 bit	2.2 V		e1		260		.000004 Amp	8 mm	45 ns
CY62148EV30LL-45BVI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B36	3	3.6 V	1 mm	6 mm	Not Qualified	4194304 bit	2.2 V		e0		260	YES	.000007 Amp	8 mm	45 ns
CY7C1010DV33-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J36	3	3.6 V	2.75 mm	10.16 mm	Not Qualified	2097152 bit	3 V		e4	40	260		.01 Amp	23.495 mm	10 ns
DS1270Y-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2097152 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	85 Cel		2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-PDMA-P36		5.5 V			Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION PERIOD	e0				.00015 Amp		100 ns
DS1270AB-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-PDMA-P36		5.25 V			Not Qualified	16777216 bit	4.75 V	5 YEAR DATA RETENTION	e0						70 ns
DS1270Y-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDMA-P36		5.5 V			Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION	e0						100 ns
DS1270W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	IN-LINE			2.54 mm	70 Cel		2MX8	2M		0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-P36		3.6 V	10.922 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e3					53.213 mm	100 ns
DS1265AB-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	85 Cel		1MX8	1M		-40 Cel	TIN LEAD	DUAL		R-XDIP-P36		5.25 V	10.29 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V	10 YEAR DATA RETENTION PERIOD	e0				.00015 Amp	53.085 mm	100 ns
DS1270W-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	85 Cel		2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-XDMA-T36		3.6 V			Not Qualified	16777216 bit	3 V		e0				.0002 Amp		150 ns
DS1265W-100+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	MATTE TIN	DUAL		R-XDMA-P36		3.6 V			Not Qualified	8388608 bit	3 V		e3				.00015 Amp		100 ns
DS1270Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDMA-P36		5.5 V			Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION	e0						70 ns
DS1270AB-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDMA-P36		5.25 V			Not Qualified	16777216 bit	4.75 V	5 YEAR DATA RETENTION	e0						100 ns
DS1265Y-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	85 Cel		1MX8	1M		-40 Cel	TIN LEAD	DUAL		R-XDMA-P36		5.5 V			Not Qualified	8388608 bit	4.5 V		e0				.00015 Amp		70 ns
DS1265Y-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	85 Cel		1MX8	1M		-40 Cel	TIN LEAD	DUAL		R-XDIP-P36		5.5 V	10.29 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0				.00015 Amp	53.085 mm	100 ns
DS1270W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR		UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-XDMA-P36		3.6 V			Not Qualified	16777216 bit	3 V		e0						100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.