52 SRAM 1,359

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT7130SA35JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.03 Amp	19.1262 mm	35 ns
RMLV3216AGSD-5S2	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE		8			85 Cel		2MX16	2M		-40 Cel		DUAL		R-PDSO-G52		3.6 V				33554432 bit	2.7 V								55 ns
IDT71342LA25JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3			YES		19.1262 mm	25 ns
IDT7130SA25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.03 Amp	19.1262 mm	25 ns
IDT7014S20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	4KX9	4K		-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	36864 bit	4.5 V		e3	30	260			19.1262 mm	20 ns
7134LA45JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	125 Cel	3-STATE	4KX8	4K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e3	30	260		.004 Amp	19.1262 mm	45 ns
7132LA25JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V		e0	20	225		.004 Amp	19.1262 mm	25 ns
IDT7140SA100JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e0	20	225		.03 Amp	19.1262 mm	100 ns
IDT71321SA25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.015 Amp	19.1262 mm	25 ns
IDT71321SA55JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e3	30	260		.03 Amp	19.1262 mm	55 ns
HM62A188CP-45	Renesas Electronics	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		18	CHIP CARRIER				1.27 mm	70 Cel		8KX18	8K		0 Cel		QUAD		S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.5 V							19.1262 mm	45 ns
7134LA55JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.004 Amp	19.1262 mm	55 ns
IDT7142SA55JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V		e0	20	225		.03 Amp	19.1262 mm	55 ns
IDT7142SA55JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.015 Amp	19.1262 mm	55 ns
IDT7140LA25JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.004 Amp	19.1262 mm	25 ns
7134SA55JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	125 Cel	3-STATE	4KX8	4K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	32768 bit	4.5 V		e3	30	260		.03 Amp	19.1262 mm	55 ns
IDT7140LA25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	25 ns
IDT7014S25JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		9	CHIP CARRIER				1.27 mm	85 Cel		4KX9	4K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	36864 bit	4.5 V		e3					19.1262 mm	25 ns
IDT70121S35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	18432 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e3	30	260	YES	.015 Amp	19.1262 mm	35 ns
HM62A168BCP-25	Renesas Electronics	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		16	CHIP CARRIER				1.27 mm	70 Cel		8KX16	8K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm	19.1262 mm	Not Qualified	131072 bit	4.75 V	ADDRESS LATCH						19.1262 mm	25 ns
IDT71321LA35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm	19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.0015 Amp	19.1262 mm	35 ns
7130SA100JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm	19.1262 mm	Not Qualified	8192 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	100 ns
KM718BV87J-10	Samsung	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	260 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.13 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		3.47 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	3.13 V	SELF-TIMED WRITE; BYTE WRITE; BURST COUNTER	e0			YES	.08 Amp	19.05 mm	10 ns
KM718BV521J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER				1.27 mm			32KX18	32K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	589824 bit								19.05 mm	8 ns
KM718BV90J-12	Samsung	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.13 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		3.47 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	3.13 V	SELF-TIMED WRITE; BYTE WRITE; BURST COUNTER	e0			YES	.08 Amp	19.05 mm	12 ns
KM718BV87T-10	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		3.47 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.13 V							19.1262 mm	10 ns
KM718BV87T-10000	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		3.47 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.13 V							19.1262 mm	10 ns
KM718B90J-11	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.25 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	4.75 V		e0			YES	.09 Amp	19.05 mm	11 ns
KM718BV87T-12000	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		3.47 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.13 V							19.1262 mm	12 ns
KM718BV87T-12	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		3.47 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.13 V							19.1262 mm	12 ns
KM718B90J-8	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	270 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.25 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	4.75 V		e0			YES	.09 Amp	19.05 mm	8 ns
KM78C80J-20	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	230 mA	8192 words	COMMON	5	5	16	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	131072 bit	4.5 V		e0			YES	.23 Amp	19.1262 mm	20 ns
KM718BV90J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm			64KX18	64K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	1179648 bit								19.05 mm	8 ns
KM718B87J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER				1.27 mm			64KX18	64K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	1179648 bit								19.05 mm	12 ns
KM718B521J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER				1.27 mm			32KX18	32K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	589824 bit								19.05 mm	8 ns
KM718B514J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER				1.27 mm			32KX18	32K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	589824 bit								19.05 mm	9 ns
KM718B90J-12	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel		QUAD	1	S-PQCC-J52		5.25 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	4.75 V	SELF-TIMED WRITE; BYTE WRITE; BURST COUNTER				YES		19.05 mm
KM718BV91J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm			64KX18	64K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	1179648 bit								19.05 mm	8 ns
KM718BV86J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm			64KX18	64K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	1179648 bit								19.05 mm	9 ns
KM718BV521J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER				1.27 mm			32KX18	32K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	589824 bit								19.05 mm	9 ns
KM78C80J-25	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	16	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.5 V	4.57 mm	19.1262 mm	Not Qualified	131072 bit	4.5 V		e0			YES	.22 Amp	19.1262 mm	25 ns
KM718BV87J-12	Samsung	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.13 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		3.47 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	3.13 V	SELF-TIMED WRITE; BYTE WRITE; BURST COUNTER	e0			YES	.08 Amp	19.05 mm	12 ns
KM718BV91J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm			64KX18	64K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	1179648 bit								19.05 mm	12 ns
KM718B513J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER				1.27 mm			32KX18	32K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	589824 bit								19.05 mm	8 ns
KM718BV521J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER				1.27 mm			32KX18	32K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	589824 bit								19.05 mm	12 ns
KM718B520J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER				1.27 mm			32KX18	32K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	589824 bit								19.05 mm	12 ns
KM718BV86J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm			64KX18	64K				QUAD		S-PQCC-J52			4.52 mm	19.05 mm	Not Qualified	1179648 bit								19.05 mm	8 ns
KM718BV90J-9	Samsung	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.13 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		3.47 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	3.13 V	SELF-TIMED WRITE; BYTE WRITE; BURST COUNTER	e0			YES	.08 Amp	19.05 mm	9 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.