52 SRAM 1,359

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT58LC64K18D7EJ-4.5	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	425 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0		.005 Amp		4.5 ns
MT58LC1616LG-25TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		16	FLATPACK				1 mm	70 Cel		16KX16	16K		TIN LEAD	QUAD	1	S-PQFP-G52	3.63 V	2.45 mm	14 mm	Not Qualified	262144 bit	3 V	BYTE WRITE	e0	YES		14 mm
MT58LC64K18B2EJ-14LP	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0				14 ns
MT58LC64K18B2EJ-11PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX18	64K		TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	INTERLEAVED BURST	e0	YES		19.1262 mm	11 ns
MT56C0818EJ-25	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.75 V	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES	.02 Amp	19.1262 mm	25 ns
MT56C2818LG-28TR	Micron Technology	CACHE SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		9	FLATPACK		18		.65 mm	70 Cel	3-STATE	16KX9	16K		TIN LEAD	QUAD	1	S-PQFP-G52	5.25 V	2.44 mm	10 mm	Not Qualified	147456 bit	4.75 V		e0	YES		10 mm	28 ns
MT56C0818EJ45	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.75 V	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	147456 bit			e0		.02 Amp		45 ns
MT5LC2516EJ-20	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	16KX16	16K	3 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.63 V	4.57 mm	19.1262 mm	Not Qualified	262144 bit	3 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES	.01 Amp	19.1262 mm	20 ns
MT56C3816EJ-20TR	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		16	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	8KX16	8K		TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	131072 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES		19.1262 mm	20 ns
MT56C16K16B2LG-25TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		16	FLATPACK				1 mm	70 Cel		16KX16	16K		TIN LEAD	QUAD	1	S-PQFP-G52	5.5 V	2.45 mm	14 mm	Not Qualified	262144 bit	4.5 V	BYTE READ/WRITE; ADDRESS/DATA INPUT LATCH	e0	YES		14 mm	25 ns
MT5C2516LG-15	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	16384 words	COMMON	5	5	16	FLATPACK	QFP52,.68SQ,40		SRAMs	1 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	TIN LEAD	QUAD	1	S-PQFP-G52	5.5 V	2.45 mm	14 mm	Not Qualified	262144 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES	.015 Amp	14 mm	15 ns
MT58LC64K18M1EJ-17	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	175 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.125 mm	Not Qualified	1179648 bit	3.135 V	BURST COUNTER; BYTE WRITE CONTROL; SELF TIMED REGISTER	e0	YES	.002 Amp	19.125 mm	17 ns
MT58LC64K18M1EJ-11PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX18	64K		TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	LINEAR BURST	e0	YES		19.1262 mm	11 ns
MT58LC64K18M1EJ-9	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.125 mm	Not Qualified	1179648 bit	3.135 V	BURST COUNTER; BYTE WRITE CONTROL; SELF TIMED REGISTER	e0	YES	.005 Amp	19.125 mm	9 ns
MT56C2818LG-24TR	Micron Technology	CACHE SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		18	FLATPACK				.65 mm	70 Cel	3-STATE	8KX18	8K		TIN LEAD	QUAD	1	S-PQFP-G52	5.25 V	2.44 mm	10 mm	Not Qualified	147456 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES		10 mm	24 ns
MT58LC1616EJ-25TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		16384 words		3.3		16	CHIP CARRIER				1.27 mm	70 Cel		16KX16	16K		TIN LEAD	QUAD	1	S-PQCC-J52	3.63 V	4.57 mm	19.1262 mm	Not Qualified	262144 bit	3 V	BYTE WRITE	e0	YES		19.1262 mm
MT56C3818EJ-20	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.75 V	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES	.02 Amp	19.1262 mm	20 ns
MT58LC64K18M1EJ-11L	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	225 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	LINEAR BURST	e0	YES		19.1262 mm	11 ns
MT58LC64K18C4EJ-6PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX18	64K		TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm	6 ns
MT58LC64K18C4EJ-8L	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	210 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm	8 ns
MT56C16K16B2EJ-15	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	16384 words	COMMON	5	5	16	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	262144 bit	4.5 V	BYTE READ/WRITE; ADDRESS/DATA INPUT LATCH	e0	YES	.015 Amp	19.1262 mm	15 ns
MT5C2818LG-15TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		18	FLATPACK				1 mm	70 Cel	3-STATE	16KX18	16K		TIN LEAD	QUAD	1	S-PQFP-G52	5.5 V	2.45 mm	14 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES		14 mm	15 ns
MT5C2516LG-12	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	16384 words	COMMON	5	5	16	FLATPACK	QFP52,.68SQ,40		SRAMs	1 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	TIN LEAD	QUAD	1	S-PQFP-G52	5.5 V	2.45 mm	14 mm	Not Qualified	262144 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES	.015 Amp	14 mm	12 ns
MT56C0816EJ-25	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	16	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	8KX16	8K	4.75 V	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	131072 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES	.02 Amp	19.1262 mm	25 ns
MT58LC64K18B2EJ-11LP	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	225 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0				11 ns
MT56C0818LG-25	Micron Technology	CACHE SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	18	FLATPACK	QFP52,.52SQ		SRAMs	.65 mm	70 Cel	3-STATE	8KX18	8K	4.75 V	TIN LEAD	QUAD	1	S-PQFP-G52	5.25 V	2.44 mm	10 mm	Not Qualified	147456 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES	.02 Amp	10 mm	25 ns
MT58LC64K18D7EJ-6LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.6 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V		e0	YES		19.1262 mm	6 ns
MT56LC16K16C3EJ-20	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	16KX16	16K	3 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.63 V	4.57 mm	19.1262 mm	Not Qualified	262144 bit	3 V	BYTE READ/WRITE; ADDRESS/DATA INPUT LATCH	e0	YES	.01 Amp	19.1262 mm	20 ns
MT58LC64K18A6EJ-4.5LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm
MT58C1618EJ-25	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	230 mA	16384 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	16KX18	16K	4.5 V	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE	e0	YES	.015 Amp	19.1262 mm	25 ns
MT56C3818EJ-35	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.75 V	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES	.02 Amp	19.1262 mm	35 ns
MT58LC64K18M1EJ-14L	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	LINEAR BURST	e0	YES		19.1262 mm	14 ns
MT56C2818EJ-24	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.75 V	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	147456 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES	.02 Amp	19.1262 mm	24 ns
MT58C1618LG-17	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	16384 words	COMMON	5	5	18	FLATPACK	QFP52,.8SQ,40		SRAMs	1 mm	70 Cel	3-STATE	16KX18	16K	4.5 V	Tin/Lead (Sn/Pb)	QUAD	1	S-PQFP-G52	5.5 V	2.45 mm	14 mm	Not Qualified	294912 bit	4.5 V		e0	YES	.015 Amp	14 mm	17 ns
MT58LC64K18D7EJ-5LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.6 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V		e0	YES		19.1262 mm	5 ns
MT56C0816EJ-35TR	Micron Technology	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		16	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	8KX16	8K		TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	131072 bit	4.75 V	ADDRESS LATCH; 2-WAY SET ASSOCIATIVE	e0	YES		19.1262 mm	35 ns
MT58LC64K18A6EJ-6P	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	300 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES	.002 Amp	19.1262 mm	6 ns
MT58C1618LG-20	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	16384 words	COMMON	5	5	18	FLATPACK	QFP52,.68SQ,40		SRAMs	1 mm	70 Cel	3-STATE	16KX18	16K	4.5 V	TIN LEAD	QUAD	1	S-PQFP-G52	5.5 V	2.45 mm	14 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE	e0	YES	.015 Amp	14 mm	20 ns
MT58LC64K18A6EJ-5L	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	335 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm	5 ns
MT58LC64K18C4EJ-6L	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	300 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm	6 ns
MT56C2818LG-28	Micron Technology	CACHE SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	16384 words	COMMON	5	5	9	FLATPACK	QFP52,.52SQ	18	SRAMs	.65 mm	70 Cel	3-STATE	16KX9	16K	4.75 V	Tin/Lead (Sn/Pb)	QUAD	1	S-PQFP-G52	5.25 V	2.44 mm	10 mm	Not Qualified	147456 bit	4.75 V		e0	YES	.02 Amp	10 mm	28 ns
MT58LC64K18A6EJ-7LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm
MT58LC1618LG-20TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		18	FLATPACK				1 mm	70 Cel		16KX18	16K		TIN LEAD	QUAD	1	S-PQFP-G52	3.63 V	2.45 mm	14 mm	Not Qualified	294912 bit	3 V	BYTE WRITE	e0	YES		14 mm
MT58LC64K18C4EJ-5L	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	335 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm	5 ns
MT5LC2818LG-20	Micron Technology	CACHE SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	3.3	3.3	18	FLATPACK	QFP52,.68SQ,40		SRAMs	1 mm	70 Cel	3-STATE	16KX18	16K	3 V	TIN LEAD	QUAD	1	S-PQFP-G52	3.63 V	2.45 mm	14 mm	Not Qualified	294912 bit	3 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES	.01 Amp	14 mm	20 ns
MT58LC64K18D7EJ-6PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX18	64K		TIN LEAD	QUAD	1	S-PQCC-J52	3.6 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V		e0	YES		19.1262 mm	6 ns
MT58LC64K18D7EJ-4.5LP	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	425 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0				4.5 ns
MT58LC64K18M1EJ-9P	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	LINEAR BURST	e0	YES	.002 Amp	19.1262 mm	9 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.