52 SRAM 1,359

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
KM718BV91J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm			64KX18	64K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	1179648 bit						19.05 mm	9 ns
KM718BV87J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm			64KX18	64K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	1179648 bit						19.05 mm	8 ns
KM718B521J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	12 ns
KM718BV520J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	9 ns
KM718BV90J-10	Samsung	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	240 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.13 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.47 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	3.13 V	SELF-TIMED WRITE; BYTE WRITE; BURST COUNTER	e0	YES	.08 Amp	19.05 mm	10 ns
KM718BV513J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	8 ns
KM718B86J-10	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	260 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	4.75 V		e0	YES	.09 Amp	19.05 mm	10 ns
KM718BV514J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	8 ns
KM718BV520J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	12 ns
KM718B86J-9	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	270 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	4.75 V		e0	YES	.09 Amp	19.05 mm	9 ns
KM718B87J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm			64KX18	64K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	1179648 bit						19.05 mm	8 ns
KM718B90J-9	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	270 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	4.75 V		e0	YES	.09 Amp	19.05 mm	9 ns
KM718BV86J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm			64KX18	64K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	1179648 bit						19.05 mm	12 ns
KM718BV514J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	9 ns
KM718B514J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	8 ns
KM718B91J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm			64KX18	64K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	1179648 bit						19.05 mm	12 ns
KM718B87J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm			64KX18	64K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	1179648 bit						19.05 mm	9 ns
KM718BV87T-9	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52	3.47 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.13 V					19.1262 mm	9 ns
KM718B90J-10	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	260 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	4.75 V		e0	YES	.09 Amp	19.05 mm	10 ns
KM718B513J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	9 ns
KM718BV87T-90000	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52	3.47 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.13 V					19.1262 mm	9 ns
KM718B86J-12	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	4.75 V		e0	YES	.09 Amp	19.05 mm	12 ns
KM78C80J-35	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	210 mA	8192 words	COMMON	5	5	16	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	131072 bit	4.5 V		e0	YES	.21 Amp	19.1262 mm	35 ns
KM718B514J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	12 ns
KM718BV520J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	8 ns
KM718BV514J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	12 ns
KM718BV513J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	9 ns
KM718BV513J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		3.3		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	12 ns
KM718B91J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm			64KX18	64K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	1179648 bit						19.05 mm	9 ns
KM718B91J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm			64KX18	64K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	1179648 bit						19.05 mm	8 ns
KM718B86J-8	Samsung	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	270 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	4.75 V		e0	YES	.09 Amp	19.05 mm	8 ns
KM718B521J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	9 ns
KM718B520J-9	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	9 ns
KM718B513J-12	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	12 ns
KM718BV87J-9	Samsung	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	270 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.13 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.47 V	4.52 mm	19.05 mm	Not Qualified	1179648 bit	3.13 V	SELF-TIMED WRITE; BYTE WRITE; BURST COUNTER	e0	YES	.08 Amp	19.05 mm	9 ns
KM718B520J-8	Samsung	STANDARD SRAM		52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		18	CHIP CARRIER			1.27 mm			32KX18	32K				QUAD		S-PQCC-J52		4.52 mm	19.05 mm	Not Qualified	589824 bit						19.05 mm	8 ns
MT58LC64K18A6EJ-7PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm
MT5C2818EJ-15TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	16KX18	16K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES		19.1262 mm	15 ns
MT5C2818EJ-20TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	16KX18	16K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES		19.1262 mm	20 ns
MT58LC64K18C4EJ-10	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.125 mm	Not Qualified	1179648 bit	3.135 V	BURST COUNTER; BYTE WRITE CONTROL; SELF TIMED REGISTER	e0	YES	.002 Amp	19.125 mm	10 ns
MT58LC64K18B2EJ-11	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	225 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0		.005 Amp		11 ns
MT58LC64K18C4EJ-8LP	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	210 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52				Not Qualified	1179648 bit			e0				8 ns
MT58LC64K18P3EJ-10	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	170 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V		e0		.002 Amp	19.1262 mm	10 ns
MT58LC64K18A6EJ-5PTR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm
MT58LC64K18A6EJ-4.5L	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		19.1262 mm	4.5 ns
MT5C2516EJ-12TR	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER			1.27 mm	70 Cel		16KX16	16K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	262144 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES		19.1262 mm	12 ns
MT5C2818LG-15	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	16384 words	COMMON	5	5	18	FLATPACK	QFP52,.68SQ,40	SRAMs	1 mm	70 Cel	3-STATE	16KX18	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQFP-G52	5.5 V	2.45 mm	14 mm	Not Qualified	294912 bit	4.5 V	BYTE WRITE; ADDRESS/DATA INPUT LATCH	e0	YES	.015 Amp	14 mm	15 ns
MT58LC64K18B2EJ-11P	Micron Technology	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	225 mA	65536 words	COMMON	3.3	3.3	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	3.14 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	3.465 V	4.57 mm	19.1262 mm	Not Qualified	1179648 bit	3.135 V	INTERLEAVED BURST	e0	YES	.002 Amp	19.1262 mm	11 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.