Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
SRAMs |
70 Cel |
4KX8 |
4K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.08 Amp |
20 ns |
||||||||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
30 |
240 |
.015 Amp |
14 mm |
55 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
280 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
30 |
240 |
YES |
.015 Amp |
14 mm |
25 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
SRAMs |
85 Cel |
4KX8 |
4K |
2 V |
-40 Cel |
TIN |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e3 |
260 |
YES |
.08 Amp |
25 ns |
|||||||||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
25 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
SRAMs |
70 Cel |
4KX8 |
4K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.08 Amp |
20 ns |
||||||||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
20 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
25 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
280 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
30 |
240 |
.015 Amp |
14 mm |
20 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
30 |
240 |
.015 Amp |
14 mm |
35 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
30 |
240 |
.015 Amp |
14 mm |
35 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
280 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
30 |
240 |
.015 Amp |
14 mm |
20 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
SRAMs |
85 Cel |
4KX8 |
4K |
2 V |
-40 Cel |
TIN |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e3 |
260 |
YES |
.08 Amp |
25 ns |
|||||||||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
25 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
20 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
55 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
35 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
55 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
280 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
30 |
240 |
.015 Amp |
14 mm |
25 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
35 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
30 |
240 |
.015 Amp |
14 mm |
55 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
25 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
280 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
30 |
240 |
.015 Amp |
14 mm |
25 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP |
e0 |
30 |
240 |
YES |
.004 Amp |
14 mm |
55 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.004 Amp |
14 mm |
25 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
14 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.004 Amp |
10 mm |
20 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
20 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
20 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
16384 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e3 |
30 |
260 |
.015 Amp |
10 mm |
35 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
16384 bit |
4.5 V |
BATTERY BACK UP |
e3 |
30 |
260 |
.004 Amp |
10 mm |
20 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
16384 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
10 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
110 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.0015 Amp |
10 mm |
55 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.015 Amp |
10 mm |
35 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP |
e3 |
YES |
14 mm |
20 ns |
|||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.004 Amp |
14 mm |
25 ns |
||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
16KX8 |
16K |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
NOT SPECIFIED |
260 |
14 mm |
20 ns |
||||||||||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
110 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.004 Amp |
14 mm |
100 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
110 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.004 Amp |
14 mm |
100 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.004 Amp |
14 mm |
100 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
190 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.03 Amp |
14 mm |
55 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
14 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
14 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.004 Amp |
10 mm |
25 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFF |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
120 mA |
1024 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
3 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-F64 |
3 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
8192 bit |
3 V |
e3 |
30 |
260 |
.003 Amp |
10 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP |
e3 |
YES |
14 mm |
20 ns |
|||||||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
110 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.0015 Amp |
14 mm |
100 ns |
||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
25 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.