Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.004 Amp |
14 mm |
55 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
110 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
100 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
280 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
Not Qualified |
8192 bit |
e0 |
30 |
240 |
.03 Amp |
25 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.015 Amp |
14 mm |
25 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
14 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
20 ns |
||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
190 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
55 ns |
||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
20 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
Not Qualified |
8192 bit |
e0 |
30 |
240 |
.015 Amp |
20 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
110 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
100 ns |
||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
35 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
190 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.03 Amp |
14 mm |
100 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
280 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.03 Amp |
14 mm |
25 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.004 Amp |
14 mm |
100 ns |
||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
185 mA |
16384 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
30 |
260 |
.0025 Amp |
14 mm |
15 ns |
|||||||||||
Renesas Electronics |
SRAM MODULE |
MILITARY |
64 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1600 mA |
262144 words |
COMMON |
5 |
5 |
32 |
IN-LINE |
DIP64,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
256KX32 |
256K |
-55 Cel |
TIN LEAD |
DUAL |
R-XDIP-T64 |
Not Qualified |
8388608 bit |
e0 |
20 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
185 mA |
8192 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
e3 |
30 |
260 |
.0025 Amp |
14 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.6SQ,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
131072 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
70 ns |
|||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
14 mm |
25 ns |
||||||||||||||||||||||
Renesas Electronics |
SRAM MODULE |
COMMERCIAL |
64 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1200 mA |
262144 words |
COMMON |
5 |
5 |
32 |
IN-LINE |
DIP64,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-XDIP-T64 |
Not Qualified |
8388608 bit |
e0 |
.08 Amp |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e0 |
30 |
240 |
.03 Amp |
14 mm |
35 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.6SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
14 mm |
35 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
940 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
1048576 bit |
e0 |
.125 Amp |
40 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
14 mm |
35 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1130 mA |
131072 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP64,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-CDMA-T64 |
5.5 V |
9.652 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.245 Amp |
81.28 mm |
30 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
370 mA |
16384 words |
5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
125 Cel |
16KX8 |
16K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
14 mm |
20 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
14 mm |
20 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.6SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
16KX8 |
16K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
LOW POWER STANDBY; BATTERY BACK UP |
e3 |
14 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1200 mA |
262144 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
4.5 V |
0 Cel |
TIN LEAD |
SINGLE |
R-PSMA-N64 |
16.002 mm |
Not Qualified |
8388608 bit |
e0 |
.08 Amp |
45 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
8192 words |
2.5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
2.6 V |
1.4 mm |
14 mm |
Not Qualified |
65536 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
30 |
240 |
14 mm |
20 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
2.5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
16KX8 |
16K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
2.6 V |
1.4 mm |
14 mm |
Not Qualified |
131072 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
30 |
240 |
14 mm |
25 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
2.5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
2.6 V |
1.4 mm |
14 mm |
Not Qualified |
131072 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
30 |
240 |
14 mm |
20 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
2.5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
2.6 V |
1.4 mm |
14 mm |
Not Qualified |
131072 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
30 |
240 |
14 mm |
25 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
8192 words |
2.5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
2.6 V |
1.4 mm |
14 mm |
Not Qualified |
65536 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
30 |
240 |
14 mm |
25 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
8192 words |
2.5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
2.6 V |
1.4 mm |
14 mm |
Not Qualified |
65536 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
30 |
240 |
14 mm |
25 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
16384 words |
COMMON |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.6SQ,32 |
.8 mm |
85 Cel |
16KX8 |
16K |
2 V |
-40 Cel |
QUAD |
2 |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
131072 bit |
4.5 V |
YES |
.01 Amp |
14 mm |
35 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
14 mm |
35 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
16KX8 |
16K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
14 mm |
35 ns |
||||||||||||||||||||||
Renesas Electronics |
SRAM MODULE |
COMMERCIAL |
64 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1600 mA |
262144 words |
COMMON |
5 |
5 |
32 |
IN-LINE |
DIP64,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-XDIP-T64 |
Not Qualified |
8388608 bit |
e0 |
17 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
16KX8 |
16K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
14 mm |
25 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP64,.6SQ,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
14 mm |
55 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
370 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e0 |
30 |
240 |
.03 Amp |
14 mm |
20 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
295 mA |
16384 words |
5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
125 Cel |
16KX8 |
16K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
14 mm |
35 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
14 mm |
12 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
245 mA |
4096 words |
COMMON |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX9 |
4K |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
30 |
260 |
14 mm |
20 ns |
|||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
16KX8 |
16K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
14 mm |
35 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.