Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1440 mA |
262144 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
2 V |
0 Cel |
SINGLE |
R-PSMA-N64 |
15.494 mm |
Not Qualified |
8388608 bit |
.0024 Amp |
20 ns |
|||||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
260 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
3.6 V |
15.113 mm |
Not Qualified |
4194304 bit |
3 V |
YES |
.0002 Amp |
25 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1040 mA |
65536 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
5.5 V |
15.113 mm |
Not Qualified |
2097152 bit |
4.5 V |
YES |
.0024 Amp |
25 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1360 mA |
65536 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
4.5 V |
0 Cel |
SINGLE |
R-PSMA-N64 |
15.113 mm |
Not Qualified |
2097152 bit |
.04 Amp |
15 ns |
|||||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
720 mA |
65536 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SSIM64,.2 |
16 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
5.5 V |
Not Qualified |
524288 bit |
4.5 V |
CONFIGURABLE AS 16K X 32 |
YES |
.002 Amp |
45 ns |
|||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1520 mA |
262144 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
2 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
1 |
R-XZMA-T64 |
5.5 V |
15.494 mm |
Not Qualified |
8388608 bit |
4.5 V |
e0 |
YES |
.0012 Amp |
15 ns |
||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
340 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
3.6 V |
15.113 mm |
Not Qualified |
4194304 bit |
3 V |
YES |
.0002 Amp |
17 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
480 mA |
524288 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
ZIP64/68,.1,.1 |
16 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
1 |
R-XZMA-T64 |
5.5 V |
15.367 mm |
Not Qualified |
4194304 bit |
4.5 V |
CONFIGURABLE AS 128K X 32 |
e0 |
YES |
.002 Amp |
45 ns |
||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1240 mA |
262144 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
2 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
1 |
R-XZMA-T64 |
5.5 V |
15.494 mm |
Not Qualified |
8388608 bit |
4.5 V |
e0 |
YES |
.0012 Amp |
20 ns |
||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
520 mA |
262144 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
3.6 V |
15.113 mm |
Not Qualified |
8388608 bit |
3 V |
YES |
.0004 Amp |
25 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
760 mA |
131072 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
5.5 V |
15.113 mm |
Not Qualified |
4194304 bit |
4.5 V |
YES |
.0006 Amp |
15 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
720 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T64 |
13.843 mm |
Not Qualified |
4194304 bit |
e0 |
.0012 Amp |
20 ns |
|||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1120 mA |
262144 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
5.5 V |
15.113 mm |
Not Qualified |
8388608 bit |
4.5 V |
CONFIGURABLE AS 256K X 32 |
YES |
.0012 Amp |
25 ns |
|||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
720 mA |
65536 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
5.5 V |
15.113 mm |
Not Qualified |
2097152 bit |
4.5 V |
YES |
.04 Amp |
30 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
720 mA |
16384 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64,.2 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX32 |
16K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
5.5 V |
Not Qualified |
524288 bit |
4.5 V |
CONFIGURABLE AS 16K X 32 |
YES |
.002 Amp |
35 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
720 mA |
65536 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
2 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
1 |
R-XZMA-T64 |
5.5 V |
12.7 mm |
Not Qualified |
2097152 bit |
4.5 V |
e0 |
YES |
.04 Amp |
30 ns |
||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
680 mA |
262144 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
3 V |
0 Cel |
SINGLE |
R-PSMA-N64 |
15.113 mm |
Not Qualified |
8388608 bit |
.0024 Amp |
17 ns |
|||||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
950 mA |
16384 words |
COMMON |
5 |
5 |
32 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX32 |
16K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T64 |
Not Qualified |
524288 bit |
e0 |
.008 Amp |
15 ns |
||||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
300 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
3.6 V |
15.113 mm |
Not Qualified |
4194304 bit |
3 V |
YES |
.0002 Amp |
20 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
560 mA |
131072 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
5.5 V |
15.113 mm |
Not Qualified |
4194304 bit |
4.5 V |
YES |
.0006 Amp |
25 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1520 mA |
16384 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64,.2 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX32 |
16K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
5.5 V |
Not Qualified |
524288 bit |
4.5 V |
YES |
.0024 Amp |
10 ns |
|||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1320 mA |
16384 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX32 |
16K |
2 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
1 |
R-XZMA-T64 |
5.5 V |
Not Qualified |
524288 bit |
4.5 V |
CONFIGURABLE AS 16K X 32 |
e0 |
YES |
.0024 Amp |
20 ns |
||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
880 mA |
65536 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
2 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
1 |
R-XZMA-T64 |
3.6 V |
12.954 mm |
Not Qualified |
2097152 bit |
3 V |
e0 |
YES |
.004 Amp |
20 ns |
||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
720 mA |
65536 words |
COMMON |
3.3 |
3.3 |
32 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T64 |
12.954 mm |
Not Qualified |
2097152 bit |
e0 |
.024 Amp |
35 ns |
|||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1460 mA |
16384 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64,.2 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX32 |
16K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
5.5 V |
Not Qualified |
524288 bit |
4.5 V |
CONFIGURABLE AS 16K X 32 |
YES |
.0024 Amp |
15 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
560 mA |
131072 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
2 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
1 |
R-XZMA-T64 |
5.5 V |
13.843 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
YES |
.0006 Amp |
25 ns |
||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1460 mA |
16384 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64,.2 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX32 |
16K |
4.5 V |
0 Cel |
SINGLE |
R-PSMA-N64 |
Not Qualified |
524288 bit |
.024 Amp |
15 ns |
||||||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
500 mA |
65536 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
3.6 V |
15.113 mm |
Not Qualified |
2097152 bit |
3 V |
YES |
.0028 Amp |
20 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
340 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T64 |
13.843 mm |
Not Qualified |
4194304 bit |
e0 |
.0012 Amp |
17 ns |
|||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1000 mA |
65536 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
2 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
1 |
R-XZMA-T64 |
3.6 V |
12.954 mm |
Not Qualified |
2097152 bit |
3 V |
e0 |
YES |
.004 Amp |
15 ns |
||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1520 mA |
65536 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
4.5 V |
0 Cel |
SINGLE |
R-PSMA-N64 |
15.113 mm |
Not Qualified |
2097152 bit |
.04 Amp |
12 ns |
|||||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
260 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
2 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
1 |
R-XZMA-T64 |
3.6 V |
13.843 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
YES |
.0002 Amp |
25 ns |
||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
300 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
3 V |
0 Cel |
SINGLE |
R-PSMA-N64 |
15.113 mm |
Not Qualified |
4194304 bit |
.0012 Amp |
20 ns |
|||||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
640 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T64 |
13.843 mm |
Not Qualified |
4194304 bit |
e0 |
.02 Amp |
25 ns |
|||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
920 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T64 |
13.843 mm |
Not Qualified |
4194304 bit |
e0 |
.02 Amp |
15 ns |
|||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
690 mA |
16384 words |
COMMON |
5 |
5 |
32 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX32 |
16K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T64 |
Not Qualified |
524288 bit |
e0 |
.008 Amp |
30 ns |
||||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
COMMON |
5 |
5 |
32 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX32 |
16K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T64 |
Not Qualified |
524288 bit |
e0 |
.008 Amp |
35 ns |
|||||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
440 mA |
131072 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
4.5 V |
0 Cel |
SINGLE |
R-PSMA-N64 |
15.113 mm |
Not Qualified |
4194304 bit |
.02 Amp |
45 ns |
|||||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
300 mA |
131072 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
3.6 V |
15.113 mm |
Not Qualified |
4194304 bit |
3 V |
YES |
.0002 Amp |
20 ns |
||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1080 mA |
65536 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
2 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
1 |
R-XZMA-T64 |
5.5 V |
12.954 mm |
Not Qualified |
2097152 bit |
4.5 V |
e0 |
YES |
.0024 Amp |
20 ns |
||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1520 mA |
262144 words |
COMMON |
5 |
5 |
32 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T64 |
15.494 mm |
Not Qualified |
8388608 bit |
e0 |
.04 Amp |
15 ns |
|||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1520 mA |
65536 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
2 V |
0 Cel |
SINGLE |
R-PSMA-N64 |
15.113 mm |
Not Qualified |
2097152 bit |
.0024 Amp |
12 ns |
|||||||||||||||||||||||
Micron Technology |
SRAM MODULE |
COMMERCIAL |
64 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
440 mA |
65536 words |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM64 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
2 V |
0 Cel |
SINGLE |
1 |
R-XSMA-N64 |
3.6 V |
15.113 mm |
Not Qualified |
2097152 bit |
3 V |
YES |
.0028 Amp |
25 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.