BGA SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
71V67603S166BG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	340 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			133 MHz		Not Qualified	9437184 bit			e0	20	225		.05 Amp		3.5 ns
UPD44164095AF5-E40-EQ2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX9	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	18874368 bit							.28 Amp		.45 ns
IDT71V2546XS100BG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		128KX36	128K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0					22 mm	5 ns
IDT71V257980BQI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON		2.5,3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			100 MHz		Not Qualified	4718592 bit			e0	30	225		.035 Amp		8 ns
71V65703S80BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY					70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V					9437184 bit	3.135 V	FLOW-THROUGH	e1	30	260				8 ns
IDT71V3559S85BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	235 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	90 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.045 Amp	22 mm	8.5 ns
71V3556XSA100BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	255 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			100 MHz		Not Qualified	4718592 bit			e0	20	225		.045 Amp		5 ns
IDT71T75602S166BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	166 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225		.06 Amp	22 mm	3.5 ns
IDT71V67602S166B	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0					22 mm	3.5 ns
71V3558XSA166BQ8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			166 MHz		Not Qualified	4718592 bit			e0				.04 Amp		3.5 ns
IDT71V67903S75BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	285 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.07 Amp	22 mm	7.5 ns
RMWV3216AGBG-5S2	Renesas Electronics	SRAM STD	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	GRID ARRAY					85 Cel		2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V					33554432 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED				55 ns
UPD44164094AF5-E40Y-EQ2	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	390 mA	2097152 words	COMMON		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX9	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	18874368 bit							.3 Amp		.45 ns
RMLV1616AGBG-5S2#KC0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3		16	GRID ARRAY	BGA48,6X8,30	8		.75 mm	85 Cel		1MX16	1M	2.7 V	-40 Cel		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		7.5 mm		16777216 bit	2.7 V	CAN ALSO BE ORGANISED AS 2M X 8				YES	.0003 Amp	8.5 mm	55 ns
IDT71V3558XS100BQG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3			100 MHz	13 mm	Not Qualified	4718592 bit			e1	30	260		.04 Amp	15 mm	5 ns
71V3556XS166BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			166 MHz		Not Qualified	4718592 bit			e1	30	260		.04 Amp		3.5 ns
UPD464318LS1-A5	Renesas Electronics	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		BICMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON		1.5,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm		3-STATE	256KX18	256K	3.15 V		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119						Not Qualified	4718592 bit			e0				.6 Amp		2.6 ns
70V658S15BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	490 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V				Not Qualified	2359296 bit	3.15 V		e0				.015 Amp		15 ns
71V3556XS100BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	255 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.045 Amp	22 mm	5 ns
IDT71V416S15BEG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	4194304 bit	3 V		e1	40	260		.02 Amp	9 mm	15 ns
71V65903S75BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.06 Amp	22 mm	7.5 ns
71V65803133BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	4.2 ns
UPD44324094F5-E50Y-EQ2	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	630 mA	4194304 words	COMMON		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX9	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	37748736 bit							.45 Amp		.45 ns
70V26WS55GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	BGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		16384 words		3.3		16	GRID ARRAY					70 Cel		16KX16	16K		0 Cel	MATTE TIN	BOTTOM		S-CBGA-B84		3.6 V				Not Qualified	262144 bit	3 V		e3						55 ns
71V416L15BEG	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V				Not Qualified	4194304 bit	3 V		e1	40	260		.01 Amp		15 ns
71V25761YS166BGGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.5 ns
71V3557S80BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	18	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	95 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260		.045 Amp	22 mm	8 ns
IDT71V3558XS133BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.045 Amp	22 mm	4.2 ns
71V6570375BGGI8	Renesas Electronics	ZBT SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3		36	GRID ARRAY	BGA119,7X17,50			1.27 mm	85 Cel	3-STATE	256KX36	256K	3.135 V	-40 Cel		BOTTOM		R-PBGA-B119		3.465 V	1.2 mm	100 MHz	14 mm		9437184 bit	3.135 V	FLOW-THROUGH				YES	.06 Amp	22 mm	7.5 ns
71V6790385BQGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY					85 Cel		512KX18	512K		-40 Cel		BOTTOM		R-PBGA-B165		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE							8.5 ns
UPD44322183F1-A50Y-FQ2	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	3.14 V	-40 Cel		BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	37748736 bit									3.1 ns
IDT71V65903S80BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1					22 mm	8 ns
71V3558XS166BQ	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel		BOTTOM		R-PBGA-B165				166 MHz		Not Qualified	4718592 bit							.04 Amp		3.5 ns
UPD44321322F1-A44Y-FQ2	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	440 mA	1048576 words	COMMON		2.5/3.3,3.3	32	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	1MX32	1M	3.14 V	-40 Cel		BOTTOM		R-PBGA-B165				225 MHz		Not Qualified	33554432 bit							.06 Amp		2.8 ns
71V3559S85BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	235 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	18	SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	90 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260		.045 Amp	22 mm	8.5 ns
UPD44645084F5-E37-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE		1.5/1.8,1.8	8	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX8	8M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				270 MHz		Not Qualified	67108864 bit									.45 ns
IDT71V2556XS133BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0					22 mm	4.2 ns
71V2556XS133BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	22 mm	4.2 ns
71V67803S150BGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			150 MHz		Not Qualified	9437184 bit			e0	20	225		.07 Amp		3.8 ns
UPD44165084F5-E50-EQ1	Renesas Electronics	STANDARD SRAM		165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	330 mA	2097152 words	SEPARATE		1.5/1.8,1.8	8	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm		3-STATE	2MX8	2M	1.7 V			BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	16777216 bit							.17 Amp		.38 ns
71V6790385BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY					70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE							8.5 ns
UPD44646185F5-E33-FQ1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				300 MHz		Not Qualified	75497472 bit									.45 ns
71V3558SA200BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			200 MHz		Not Qualified	4718592 bit			e1	30	260		.04 Amp		3.2 ns
71V3558XSA100BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	255 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			100 MHz		Not Qualified	4718592 bit			e0	20	225		.045 Amp		5 ns
UPD44325364F5-E40-EQ2-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1050 mA	1048576 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	37748736 bit							.4 Amp		.45 ns
UPD464618ALS1-A7	Renesas Electronics	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	420 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm		3-STATE	256KX18	256K	3.15 V		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119						Not Qualified	4718592 bit			e0				.045 Amp		3.5 ns
71T75802S200BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	1MX18	1M	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	200 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	3.2 ns
IDT71V3558S166BQ8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			166 MHz		Not Qualified	4718592 bit			e0				.04 Amp		3.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.