BGA SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
IDT71T75602S150BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	235 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	150 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225	.06 Amp	22 mm	3.8 ns
71V65703S80BG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	95 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225	.04 Amp	22 mm	8 ns
71V3556XS133BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.04 Amp	22 mm	4.2 ns
71V3579S75BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY					85 Cel		256KX18	256K		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V					4718592 bit	3.135 V							7.5 ns
UPD44164362AF5-E33-EQ2	Renesas Electronics	STANDARD SRAM		165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	610 mA	524288 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm		3-STATE	512KX36	512K	1.7 V			BOTTOM		R-PBGA-B165				300 MHz		Not Qualified	18874368 bit						.3 Amp		.45 ns
71V65603S100BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	270 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	BURST COUNTER	e1	30	260	.06 Amp	22 mm	5 ns
71V65803Z100BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm		9437184 bit	3.135 V	PIPELINED ARCHITECTURE		30	260		22 mm	5 ns
IDT71V416S10BEG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	4194304 bit	3 V		e1	40	260	.02 Amp	9 mm	10 ns
71V2556XS100BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		X-PBGA-B119		3.465 V			14 mm		4718592 bit	3.135 V						22 mm	5 ns
71V3558XSA100BQI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	255 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel		BOTTOM		R-PBGA-B165				100 MHz		Not Qualified	4718592 bit						.045 Amp		5 ns
71V3557S80BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	95 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260	.045 Amp	22 mm	8 ns
UPD44646097F5-E30-FQ1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE		1.5,1.8	9	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				333 MHz		Not Qualified	75497472 bit								.45 ns
71V3558XS166BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			166 MHz		Not Qualified	4718592 bit			e0	20	225	.045 Amp		3.5 ns
UPD461318-55LS1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words	COMMON	3.3	3.3,1.2	36	GRID ARRAY	BGA119(UNSPEC)	16	SRAMs		70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119		3.45 V		182 MHz		Not Qualified	1179648 bit	3.15 V		e0					3.25 ns
UPD44164182FX-E30-EQX	Renesas Electronics	STANDARD SRAM		165	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	525 mA	1048576 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165(UNSPEC)		SRAMs			3-STATE	1MX18	1M	1.7 V			BOTTOM						333 MHz		Not Qualified	18874368 bit						.255 Amp		.27 ns
IDT71V65803100BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1				22 mm	3.8 ns
71V3558XSA133BQI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel		BOTTOM		R-PBGA-B165				133 MHz		Not Qualified	4718592 bit						.045 Amp		4.2 ns
IDT71V3556XSA133BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			133 MHz	14 mm	Not Qualified	4718592 bit			e1	30	260	.045 Amp	22 mm	4.2 ns
71V67603S150BG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	150 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.05 Amp	22 mm	3.8 ns
71V6790385BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY					85 Cel		512KX18	512K		-40 Cel		BOTTOM		R-PBGA-B165		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE						8.5 ns
UPD44325184F5-E40-EQ2-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	950 mA	2097152 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	37748736 bit						.4 Amp		.45 ns
UPD44646096F5-E25-FQ1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	COMMON		1.5,1.8	9	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				400 MHz		Not Qualified	75497472 bit								.45 ns
71V2556XS150BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	131072 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		X-PBGA-B119		3.465 V			14 mm		4718592 bit	3.135 V						22 mm	3.8 ns
71V3558S166BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260	.045 Amp	22 mm	3.5 ns
IDT71V67602S133B	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0				22 mm	4.2 ns
IDT70T3319S166BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	262144 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			166 MHz		Not Qualified	4718592 bit			e1	30	260	.02 Amp		12 ns
UPD44645094F5-E37-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				270 MHz		Not Qualified	75497472 bit
UPD44325092F5-E50Y-EQ2	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	4194304 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX9	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	37748736 bit						.35 Amp		.45 ns
IDT70T633S10BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	405 mA	524288 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40		SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3					Not Qualified	9437184 bit			e1	30	260	.01 Amp		10 ns
UPD44645092F5-E40-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit								.45 ns
UPD44324364F5-E40-EQ2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1000 mA	1048576 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	37748736 bit						.5 Amp		.45 ns
UPD464536LS1-A8	Renesas Electronics	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		BICMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm		3-STATE	128KX36	128K	3.15 V		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119						Not Qualified	4718592 bit			e0			.15 Amp		8 ns
71V67803ZS133BGG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V		133 MHz		Not Qualified	9437184 bit	3.135 V		e1	30	260	.05 Amp		4.2 ns
UPD44164082FX-E60-EQX	Renesas Electronics	STANDARD SRAM		165	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	2097152 words	COMMON		1.5/1.8,1.8	8	GRID ARRAY	BGA165(UNSPEC)		SRAMs			3-STATE	2MX8	2M	1.7 V			BOTTOM						167 MHz		Not Qualified	16777216 bit						.15 Amp		.4 ns
UPD44164185FX-E30-EQX	Renesas Electronics	STANDARD SRAM		165	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	525 mA	1048576 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165(UNSPEC)		SRAMs			3-STATE	1MX18	1M	1.7 V			BOTTOM						333 MHz		Not Qualified	18874368 bit						.255 Amp		.27 ns
UPD44644182F5-E40-FQ1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit								.45 ns
UPD44165184FX-E40-EQX	Renesas Electronics	STANDARD SRAM		165	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	1048576 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165(UNSPEC)		SRAMs			3-STATE	1MX18	1M	1.7 V			BOTTOM						250 MHz		Not Qualified	18874368 bit						.2 Amp		.35 ns
71V67603150BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	85 Cel		256KX36	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1				22 mm	3.8 ns
71V3558S133BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260	.04 Amp	22 mm	4.2 ns
IDT71V3556XSA166BG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			166 MHz	14 mm	Not Qualified	4718592 bit			e0	20	225	.04 Amp	22 mm	3.5 ns
UPD44165084FX-E33-EQX	Renesas Electronics	STANDARD SRAM		165	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	475 mA	2097152 words	SEPARATE		1.5/1.8,1.8	8	GRID ARRAY	BGA165(UNSPEC)		SRAMs			3-STATE	2MX8	2M	1.7 V			BOTTOM						300 MHz		Not Qualified	16777216 bit						.235 Amp		.29 ns
IDT71V3556XS133BG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			133 MHz	14 mm	Not Qualified	4718592 bit			e0	20	225	.04 Amp	22 mm	4.2 ns
71V2556SA100BGGI	Renesas Electronics	ZBT SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3		36	GRID ARRAY	BGA119,7X17,50			1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.045 Amp	22 mm	5 ns
IDT71V3558XSA100BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	255 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			100 MHz	14 mm	Not Qualified	4718592 bit			e1	30	260	.045 Amp	22 mm	5 ns
71V3558XS133BQI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			133 MHz		Not Qualified	4718592 bit			e0			.045 Amp		4.2 ns
71V65803ZS150BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	BURST COUNTER	e1				22 mm	3.8 ns
IDT71V65903S75BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1				22 mm	7.5 ns
71V3558XS166BQ8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			166 MHz		Not Qualified	4718592 bit			e0			.04 Amp		3.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.