BGA SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
71V2578YSA150BGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.035 Amp	3.8 ns
71V2576YS133BG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.03 Amp	4.2 ns
71V2576SA150BG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	3.8 ns
71V2578SA150BQI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.035 Amp	3.8 ns
71V2578SA133BQ	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp	4.2 ns
71V2576YSA150BGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.035 Amp	3.8 ns
71V2578S133BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.13 V	-40 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.035 Amp	4.2 ns
71V2576SA150BQ	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp	3.8 ns
71V2576YS133BQI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp	4.2 ns
71V2578YS133BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.03 Amp	4.2 ns
71V2576YS150BQ	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.03 Amp	3.8 ns
71V2578YSA133BQ	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.03 Amp	4.2 ns
71V2576YSA133BQI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp	4.2 ns
71V2576YS150BG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.03 Amp	3.8 ns
71V2578YS133BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.035 Amp	4.2 ns
71V2578S150BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.13 V	-40 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.035 Amp	3.8 ns
71V2578SA150BG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	3.8 ns
71V2578SA150BQ	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp	3.8 ns
71V2578S133BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.13 V	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.03 Amp	4.2 ns
71V2578S133BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp	4.2 ns
71V2576YS150BGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.035 Amp	3.8 ns
71V2576S150BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.13 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	3.8 ns
71V2578S150BG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.13 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	3.8 ns
71V2578YS150BG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.03 Amp	3.8 ns
71V2578SA150BGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.035 Amp	3.8 ns
71V2576SA133BQI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.035 Amp	4.2 ns
71V2578YSA133BGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.035 Amp	4.2 ns
71V2578S150BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.03 Amp	3.8 ns
71V2576YS150BQI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp	3.8 ns
71V2576YS133BQ	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.03 Amp	4.2 ns
71V2576YSA133BG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.03 Amp	4.2 ns
71V2576S150BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp	3.8 ns
71V2576YSA150BQI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp	3.8 ns
71V2578YS133BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp	4.2 ns
71V2576S133BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp	4.2 ns
71V2578S150BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp	3.8 ns
71V2578YSA150BG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.03 Amp	3.8 ns
71V2578YS150BQ	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.03 Amp	3.8 ns
71V2578SA133BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				85 Cel		256KX18	256K		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V			4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		4.2 ns
71V2578YSA133BQI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp	4.2 ns
71V2576S133BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp	4.2 ns
71V2576S150BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.13 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.035 Amp	3.8 ns
71V2576YSA150BQ	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.03 Amp	3.8 ns
71V2576YSA133BGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V		e0	20	225	.035 Amp	4.2 ns
71V2576SA133BQ	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp	4.2 ns
71V2576SA150BGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.035 Amp	3.8 ns
71V2576S133BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.13 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	133 MHz	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	4.2 ns
71V2578YSA150BQI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	150 MHz	Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp	3.8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.