BGA SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
UPD44644185F5-E50-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	75497472 bit								.45 ns
UPD44646186F5-E30-FQ1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON		1.5,1.8	8	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX8	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				333 MHz		Not Qualified	75497472 bit								.45 ns
UPD464318LS1-A6	Renesas Electronics	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		BICMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON		1.5,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm		3-STATE	256KX18	256K	3.15 V		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119						Not Qualified	4718592 bit			e0			.6 Amp		3 ns
IDT71V65903S75B	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0				22 mm	7.5 ns
IDT70V525ML55BZ	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		3		16	GRID ARRAY					85 Cel		8KX16	8K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B144		3.3 V				Not Qualified	131072 bit	2.7 V		e0					55 ns
71V3558XS100BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			100 MHz		Not Qualified	4718592 bit			e0	20	225	.04 Amp		5 ns
IDT71V3558S166BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260	.045 Amp	22 mm	3.5 ns
IDT71V3556XS133BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			133 MHz	14 mm	Not Qualified	4718592 bit			e0	20	225	.045 Amp	22 mm	4.2 ns
71V3557S80BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	95 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225	.045 Amp	22 mm	8 ns
71V65603S100BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.04 Amp	22 mm	5 ns
UPD44165184FX-E60-EQX	Renesas Electronics	STANDARD SRAM		165	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	1048576 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165(UNSPEC)		SRAMs			3-STATE	1MX18	1M	1.7 V			BOTTOM						167 MHz		Not Qualified	18874368 bit						.145 Amp		.4 ns
IDT71V65603Z133BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	85 Cel		256KX36	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1				22 mm	3.8 ns
71V2556SA200BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3			200 MHz		Not Qualified	4718592 bit			e1	30	260	.04 Amp		3.2 ns
UPD44644082F5-E50-FQ1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	COMMON		1.5/1.8,1.8	8	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX8	8M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	67108864 bit								.45 ns
UPD464536ALS1-A6	Renesas Electronics	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		BICMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm		3-STATE	128KX36	128K	3.15 V		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119						Not Qualified	4718592 bit			e0			.045 Amp		6 ns
UPD44165362FX-E75-EQX	Renesas Electronics	STANDARD SRAM		165	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165(UNSPEC)		SRAMs			3-STATE	512KX36	512K	1.7 V			BOTTOM						133 MHz		Not Qualified	18874368 bit						.135 Amp		.4 ns
IDT70T3589S166BCI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	65536 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256				166 MHz		Not Qualified	2359296 bit			e0			.02 Amp		12 ns
IDT71V3559S80BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	95 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260	.04 Amp	22 mm	8 ns
UPD44647094AF5-E33-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	520 mA	8388608 words	SEPARATE	1.8	1.8	9	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				300 MHz		Not Qualified	75497472 bit						.37 Amp		.45 ns
UPD44646362AF5-E25-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	730 mA	2097152 words	COMMON		1.5,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				400 MHz		Not Qualified	75497472 bit						.48 Amp		.45 ns
UPD44322363F1-A44-FQ2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	3.14 V	0 Cel		BOTTOM		R-PBGA-B165				225 MHz		Not Qualified	37748736 bit								2.8 ns
UPD44324094F5-E40Y-EQ2	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	4194304 words	COMMON		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX9	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	37748736 bit						.55 Amp		.45 ns
R1LV1616RBG-5SW	Renesas Electronics	STANDARD SRAM	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY		8			85 Cel		1MX16	1M		-20 Cel		BOTTOM		R-PBGA-B48		3.6 V				Not Qualified	16777216 bit	2.7 V							55 ns
IDT71V3558SA100BQG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3			100 MHz	13 mm	Not Qualified	4718592 bit			e1	30	260	.04 Amp	15 mm	5 ns
IDT71V3558XSA100BQG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3			100 MHz	13 mm	Not Qualified	4718592 bit			e1	30	260	.04 Amp	15 mm	5 ns
UPD44164182AF5-E40Y-EQ2	Renesas Electronics	STANDARD SRAM		165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm		3-STATE	1MX18	1M	1.7 V			BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	18874368 bit								.45 ns
IDT71V67803S166BG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	340 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.05 Amp	22 mm	3.5 ns
IDT71V67602S150BGG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1				22 mm	3.8 ns
IDT71V65803S100BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	BURST COUNTER	e1	30	260	.04 Amp	22 mm	5 ns
70V26S25GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	BGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	170 mA	16384 words	COMMON	3.3	3.3	16	GRID ARRAY	PGA84M,11X11		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	3 V	0 Cel	MATTE TIN	BOTTOM	2	S-CBGA-B84		3.6 V				Not Qualified	262144 bit	3 V		e3			.006 Amp		25 ns
IDT71V35761SA166BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	22 mm	3.5 ns
UPD44325082F5-E50Y-EQ2-A	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	4194304 words	SEPARATE		1.5/1.8,1.8	8	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX8	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	33554432 bit						.35 Amp		.45 ns
71T75602S166BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	166 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225	.06 Amp	22 mm	3.5 ns
71V3558S200BQG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3			200 MHz		Not Qualified	4718592 bit			e1	30	260	.04 Amp		3.2 ns
71V2556XSA150BGGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	335 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		X-PBGA-B119	3	3.465 V		150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260	.045 Amp	22 mm	3.8 ns
71V2556XS166BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.04 Amp	22 mm	3.5 ns
UPD44646186F5-E25-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON		1.5,1.8	8	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX8	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				400 MHz		Not Qualified	75497472 bit								.45 ns
IDT71V3558XS133BQ	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			133 MHz	13 mm	Not Qualified	4718592 bit			e0			.04 Amp	15 mm	4.2 ns
71V2556SA150BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.04 Amp	22 mm	3.8 ns
UPD44321321F1-A65-FQ2	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	1048576 words	COMMON		2.5/3.3,3.3	32	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX32	1M	3.14 V	0 Cel		BOTTOM		R-PBGA-B165				133 MHz		Not Qualified	33554432 bit						.06 Amp		6.5 ns
UPD44646187F5-E25-FQ1-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				400 MHz		Not Qualified	75497472 bit								.45 ns
71V3558SA100BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			100 MHz		Not Qualified	4718592 bit			e1	30	260	.04 Amp		5 ns
71V65903S80BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	60 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	95 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0		225	.06 Amp	22 mm	8 ns
IDT71V3558XS166BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			166 MHz	14 mm	Not Qualified	4718592 bit			e1	30	260	.04 Amp	22 mm	3.5 ns
71V3558XSA133BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			133 MHz		Not Qualified	4718592 bit			e0	20	225	.04 Amp		4.2 ns
71V3556XSA166BQI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			166 MHz		Not Qualified	4718592 bit			e0			.045 Amp		3.5 ns
IDT71V3556SA100BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	255 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0	20	225	.045 Amp	22 mm	5 ns
UPD44646184F5-E27-FQ1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON		1.5,1.8	8	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX8	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165				375 MHz		Not Qualified	75497472 bit								.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.