DIP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
BQ4013LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDMA-P32	3.6 V	9.53 mm	15.24 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.001 Amp	42.8 mm	70 ns
5962-8959837MXA	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T32	5.5 V	3.937 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					40.64 mm	25 ns
TMS2147-7NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				70 ns
8403609LX	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.2 V	-55 Cel		DUAL		R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V						.02 Amp	31.877 mm	45 ns
SNC54LS289AJ	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC	NO		TTL	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	16X4	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified										90 ns
TMS4043JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel		DUAL		R-XDIP-T16				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				1000 ns
TMS2114L-25NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				250 ns
TMS4044-30JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	2.4 V	0 Cel		DUAL		R-XDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
SN10140JE	Texas Instruments	STANDARD SRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC	NO		ECL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel		64X1	64		0 Cel		DUAL		R-XDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
SNJ54ALS217J	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64X4	64		-55 Cel		DUAL		R-XDIP-T20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS4045-30NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
NMC6514J-9	Texas Instruments	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4096 bit			e0				.000025 Amp		320 ns
SM69CE288-35JD	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX9	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T32				Not Qualified	294912 bit				NOT SPECIFIED	NOT SPECIFIED		.0002 Amp		35 ns
5962-8959837MZA	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T32	5.5 V	5.8928 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY	e0						25 ns
TMS4036-2JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				8	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64X8	64		0 Cel		DUAL		R-XDIP-T20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED				450 ns
TMS6264L-10NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL		R-PDIP-T28				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		100 ns
SNJ54ALS218J	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32 words				8	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32X8	32		-55 Cel		DUAL		R-XDIP-T20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS4045-45NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				450 ns
SNJ54S189BJ	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16X4	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified										50 ns
SN54LS289AJ	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	16X4	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified										90 ns
BQ4024MA-120	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			200 mA	131072 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K		0 Cel		DUAL		R-PDIP-T40				Not Qualified	2097152 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		120 ns
TMS40L46-20JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	2.4 V	0 Cel		DUAL		R-XDIP-T20				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				200 ns
5962-8670507RX	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel		DUAL		R-GDIP-T20	5.5 V			Not Qualified	16384 bit	4.5 V								55 ns
TMS2114-25NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				250 ns
SNC54S189AJ	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC	NO		TTL	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16X4	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified										50 ns
5962-8601508XC	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	125 Cel		64KX1	64K		-55 Cel	GOLD	DUAL		R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e4					27.94 mm	70 ns
SMJ64C256-55JDM	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.6	SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		DUAL	1	R-CDIP-T24	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			55 ns
SMJ61CD64-40JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP		RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00001 Amp		40 ns
SNJ54LS313J	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				12	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	16X12	16		-55 Cel		DUAL		R-XDIP-T20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS6788-20N	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP		RECTANGULAR	PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel		DUAL		R-PDIP-T22				Not Qualified	65536 bit							.01 Amp		20 ns
SNJ54S289J	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	16X4	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified										50 ns
SM64C256-55JDM	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.6	SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		DUAL	1	R-CDIP-T24	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			55 ns
SNC54LS212J	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC	NO		TTL	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				9	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16X9	16		-55 Cel		DUAL		R-XDIP-T20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
SN54AS871JD	Texas Instruments	MULTI-PORT SRAM	MILITARY	28	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	125 Cel	3-STATE	16X4	16		-55 Cel		DUAL	2	R-CDIP-T28	5.5 V			Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A		NOT SPECIFIED	NOT SPECIFIED	NO			20 ns
SN54170J	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	OPEN-COLLECTOR	4X4	4		-55 Cel		DUAL	1	R-CDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		19.56 mm	40 ns
TMS4003NC	Texas Instruments	STANDARD SRAM	OTHER	40	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words				1	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		256X1	256		-55 Cel		DUAL		R-PDIP-T40				Not Qualified
5962-01-155-3974	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		DUAL		R-PDIP-T24				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED				200 ns
TMS4C1027-15N	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel		DUAL		R-PDIP-T18				Not Qualified	1048576 bit									150 ns
DM7489N/A+	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	16X4	16		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16								e0
DM74S289N/A+	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	16X4	16		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16								e0						35 ns
DM7489J/A+	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP		RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	16X4	16		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16								e0
SN74172N-10	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		8 words		5		2	IN-LINE			2.54 mm	70 Cel	3-STATE	8X2	8		0 Cel		DUAL	2	R-PDIP-T24	5.25 V	5.08 mm	15.24 mm	Not Qualified	16 bit	4.75 V					NO		31.75 mm
SN74S207J	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP		RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel		DUAL		R-XDIP-T16				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED
SN74LS289ANP3	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	16X4	16		0 Cel		DUAL		R-PDIP-T16														80 ns
SN74S314JP4	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP		RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	155 mA	1024 words		5	5	1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	1KX1	1K		0 Cel		DUAL		R-XDIP-T16					1024 bit									70 ns
SN74ALS218NP1	Texas Instruments	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32 words				8	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32X8	32		0 Cel		DUAL		R-PDIP-T20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
SN74LS215N	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX1	1K		0 Cel		DUAL		R-PDIP-T16				Not Qualified	1024 bit
SN74LS219NP3	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL		R-PDIP-T16

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.