DIP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
SNJ54LS189AJ	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16X4	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified										90 ns
5962-01-133-7565	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				450 ns
TMS6264L-12NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel		DUAL		R-PDIP-T28				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00005 Amp		120 ns
TMS62828L-10NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDIP-T32				Not Qualified	1048576 bit							.00005 Amp		100 ns
8413202RX	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		1	IN-LINE			2.54 mm	125 Cel		16KX1	16K		-55 Cel		DUAL		R-CDIP-T20	5.5 V	3.124 mm	7.62 mm		16384 bit	4.5 V							25.4 mm	40 ns
SNC54S289J	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	16X4	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified										50 ns
SN54LS212J	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				9	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16X9	16		-55 Cel		DUAL		R-XDIP-T20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
5962-8670506RX	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel		DUAL		R-GDIP-T20	5.5 V			Not Qualified	16384 bit	4.5 V								45 ns
SN10140J	Texas Instruments	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	CERAMIC	NO		ECL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel		64X1	64		0 Cel		DUAL		R-XDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS40L47-30NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T20				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
5962-8874002LA	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24	5.5 V			Not Qualified	16384 bit	4.5 V		e0						25 ns
TMS4033NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	SEPARATE			1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX1	1K		0 Cel		DUAL		R-PDIP-T16				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				450 ns
SM68CE256-55JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		55 ns
TMS21L47-7NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				70 ns
BQ4010LYMA-70	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		3.3		8	IN-LINE			2.54 mm	70 Cel		8KX8	8K		0 Cel		DUAL		R-PDIP-T28	3.6 V	9.53 mm	18.415 mm		65536 bit	3 V							37.72 mm	70 ns
MM2114N-2L	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE				70 Cel		1KX4	1K		0 Cel		DUAL		R-PDIP-T18	5.25 V			Not Qualified	4096 bit	4.75 V								200 ns
SN54LS316J	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	64X4	64		-55 Cel		DUAL		R-XDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
BQ4011YMA-100	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDMA-P28	5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	100 ns
5962-8874001LX	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel		DUAL		R-GDIP-T24	5.5 V			Not Qualified	16384 bit	4.5 V								35 ns
TMS4003JR	Texas Instruments	STANDARD SRAM	OTHER	40	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words				1	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		256X1	256		-55 Cel		DUAL		R-XDIP-T40				Not Qualified
TMS2149-5NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				55 ns
SN10145J	Texas Instruments	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	CERAMIC	NO		ECL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel		16X4	16		0 Cel		DUAL		R-XDIP-T16				Not Qualified
SMJ69CE288-55JD	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX9	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T32				Not Qualified	294912 bit				NOT SPECIFIED	NOT SPECIFIED		.0002 Amp		55 ns
SM69CE288-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		9	IN-LINE				125 Cel	3-STATE	32KX9	32K		-55 Cel		DUAL	1	R-CDIP-T32	5.5 V			Not Qualified	294912 bit	4.5 V	AUTOMATIC POWER-DOWN				YES			45 ns
54F189DLQB	Texas Instruments	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE			2.54 mm	125 Cel		16X4	16		-40 Cel		DUAL		R-GDIP-T16	5.5 V	5.08 mm	7.62 mm		64 bit	4.5 V	LG-MAX						19.94 mm	32 ns
TMS4042JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	COMMON			4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel		DUAL		R-XDIP-T18				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				1000 ns
SMJ68CE64-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	YES	.0001 Amp		45 ns
5962-8670506RA	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE				125 Cel		4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T20	5.5 V			Not Qualified	16384 bit	4.5 V		e0						45 ns
SM61CD64-30JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00001 Amp		30 ns
TMS4043-1NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel		DUAL		R-PDIP-T16				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				650 ns
5962-8601505XX	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		DUAL		R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						.02 Amp	27.94 mm	55 ns
SN54ALS870JT	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	16X4	16		-55 Cel		DUAL	2	R-GDIP-T24	5.5 V			Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED	NO			20 ns
TACT2150-20NT3	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				512 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL		R-PDIP-T24					4096 bit									20 ns
SMJ5C1008-20JDCM	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel		DUAL		R-CDIP-T32	5.5 V	4.57 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	LOW POWER STANDBY MODE		NOT SPECIFIED	NOT SPECIFIED		.002 Amp	40.645 mm	20 ns
TMS4045-20NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				200 ns
SN54LS170J-00	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5		4	IN-LINE			2.54 mm	125 Cel	OPEN-COLLECTOR	4X4	4		-55 Cel		DUAL	1	R-GDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.5 V					NO		19.56 mm	40 ns
SNC54LS319J	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	16X4	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified
TMS40L44-25NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	2.4 V	0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				250 ns
5962-7704201VEA	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL	MIL-PRF-38535 Class V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5		4	IN-LINE			2.54 mm	125 Cel		4X4	4		-55 Cel		DUAL		R-GDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.5 V							10.2 mm	45 ns
5962-01-048-2916	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X1	256		0 Cel		DUAL		R-PDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED				65 ns
SN5481AJ-00	Texas Instruments	STANDARD SRAM	MILITARY	14	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		1	IN-LINE			2.54 mm	125 Cel	OPEN-COLLECTOR	16X1	16		-55 Cel		DUAL	1	R-GDIP-T14	5.5 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.5 V					NO		19.56 mm	40 ns
SN54LS217J	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64X4	64		-55 Cel		DUAL		R-XDIP-T20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED
SNJ54S289BJ	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	16X4	16		-55 Cel		DUAL		R-XDIP-T16				Not Qualified										50 ns
SMJ64C64-40JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	65536 bit							.00001 Amp		40 ns
5962-01-077-5444	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X1	256		0 Cel		DUAL		R-PDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED				65 ns
SMJ69CE288-35JD	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX9	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T32				Not Qualified	294912 bit				NOT SPECIFIED	NOT SPECIFIED		.0002 Amp		35 ns
TMS40L44-20NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	2.4 V	0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				200 ns
BQ4013YMA-120	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDMA-P32	5.5 V	9.53 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.004 Amp	42.8 mm	120 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.