DIP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
SM64C16-35JD	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K		-55 Cel	DUAL		R-XDIP-T20				Not Qualified	16384 bit								35 ns
BQ4013YMA-70	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	DUAL		R-PDMA-P32	5.5 V	9.53 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	42.8 mm	70 ns
TMS4045-25JDL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	DUAL		R-XDIP-T18				Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED				250 ns
BQ4013YMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	DUAL		R-PDMA-P32	5.5 V	9.53 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	42.8 mm	70 ns
5962-8874002LX	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel	DUAL		R-GDIP-T24	5.5 V			Not Qualified	16384 bit	4.5 V							25 ns
TMS6716N	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	DUAL		R-PDIP-T24				Not Qualified	16384 bit								25 ns
SM61CD256-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.6	SRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K		-55 Cel	DUAL	1	R-CDIP-T24	5.5 V			Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	NO			45 ns
SM69CE72-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	9	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX9	8K	2 V	-55 Cel	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	73728 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0002 Amp		35 ns
MM2114N-3	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE				70 Cel		1KX4	1K		0 Cel	DUAL		R-PDIP-T18	5.25 V			Not Qualified	4096 bit	4.75 V							300 ns
SMJ64C16-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	DUAL	1	R-CDIP-T20	5.5 V			Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	NO			45 ns
SMJ61CD64-30JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel	DUAL		R-XDIP-T22				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED		.00001 Amp		30 ns
TMS4039-2JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	256 words	SEPARATE			4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel	DUAL		R-XDIP-T22				Not Qualified	1024 bit			NOT SPECIFIED	NOT SPECIFIED				450 ns
TMS40L45-25NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	DUAL		R-PDIP-T18				Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED				250 ns
8413204RX	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		1	IN-LINE			2.54 mm	125 Cel		16KX1	16K		-55 Cel	DUAL		R-GDIP-T20	5.5 V	5.08 mm	7.62 mm		16384 bit	4.5 V						25.3365 mm	35 ns
SMJ5C1008-25JDC	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel	DUAL	1	R-CDIP-T32	5.5 V			Not Qualified	1048576 bit	4.5 V				YES			25 ns
SM64C16-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	DUAL	1	R-CDIP-T20	5.5 V			Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	NO			35 ns
8403614LX	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	DUAL		R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V					.02 Amp	31.877 mm	35 ns
TMS40L46-20NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	2.4 V	0 Cel	DUAL		R-PDIP-T20				Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED				200 ns
SN54LS670J-00	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	4X4	4		-55 Cel	DUAL	1	R-GDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.5 V				NO		19.56 mm	45 ns
TMS4000JC	Texas Instruments	CONTENT ADDRESSABLE SRAM	OTHER	40	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				16 words				8	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		16X8	16		-25 Cel	DUAL		R-XDIP-T40				Not Qualified
TMS62256-12NW	Texas Instruments	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	DUAL		R-PDIP-T28				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED		.002 Amp		120 ns
BQ4010MA-150	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	DUAL		R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	150 ns
SN5484AJ	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	16X1	16		-55 Cel	DUAL		R-XDIP-T16				Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SMJ64C16-25JD	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K		-55 Cel	DUAL		R-XDIP-T20				Not Qualified	16384 bit								25 ns
TMS2147H-4JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	DUAL		R-XDIP-T18				Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED				45 ns
SM64C64-25JDM	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel	DUAL	1	R-CDIP-T22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		25 ns
5962-8670509RX	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	DUAL		R-GDIP-T20	5.5 V			Not Qualified	16384 bit	4.5 V							70 ns
SMJ69CE288-45JD	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX9	32K	4.5 V	-55 Cel	DUAL		R-XDIP-T32				Not Qualified	294912 bit			NOT SPECIFIED	NOT SPECIFIED		.0002 Amp		45 ns
BQ4025MA-120	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			200 mA	262144 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		256KX16	256K		0 Cel	DUAL		R-PDIP-T40				Not Qualified	4194304 bit			NOT SPECIFIED	NOT SPECIFIED		.005 Amp		120 ns
TMS1101NC	Texas Instruments	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	256X1	256		-25 Cel	DUAL		R-PDIP-T16				Not Qualified									750 ns
SN54LS170J	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	OPEN-COLLECTOR	4X4	4		-55 Cel	DUAL	1	R-GDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NO		19.56 mm	45 ns
8413206RX	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		1	IN-LINE			2.54 mm	125 Cel		16KX1	16K		-55 Cel	DUAL		R-GDIP-T20	5.5 V	5.08 mm	7.62 mm		16384 bit	4.5 V						25.3365 mm	25 ns
TMS4045-45JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	DUAL		R-XDIP-T18				Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED				450 ns
TMS4016-20NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	DUAL		R-PDIP-T24				Not Qualified	16384 bit			NOT SPECIFIED	NOT SPECIFIED				200 ns
BQ4011MA-100	Texas Instruments	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	DUAL		R-PDMA-P28	5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	100 ns
TMS4043-2JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel	DUAL		R-XDIP-T16				Not Qualified	1024 bit			NOT SPECIFIED	NOT SPECIFIED				450 ns
5962-8959838MZX	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	125 Cel		128KX8	128K		-55 Cel	DUAL		R-CDIP-T32	5.5 V	3.937 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V						40.64 mm	20 ns
TMS4035JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	SEPARATE			1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX1	1K		0 Cel	DUAL		R-XDIP-T16				Not Qualified	1024 bit			NOT SPECIFIED	NOT SPECIFIED				1000 ns
SMJ68CE16-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	DUAL	1	R-CDIP-T24	5.5 V			Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	NOT SPECIFIED	NOT SPECIFIED	YES	.0001 Amp		35 ns
5962-8601506XX	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel	DUAL		R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V					.001 Amp	27.94 mm	55 ns
SMJ69CE288-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		9	IN-LINE				125 Cel	3-STATE	32KX9	32K		-55 Cel	DUAL	1	R-CDIP-T32	5.5 V			Not Qualified	294912 bit	4.5 V	AUTOMATIC POWER-DOWN			YES			45 ns
5962-8959837MZX	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	125 Cel		128KX8	128K		-55 Cel	DUAL		R-CDIP-T32	5.5 V	3.937 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V						40.64 mm	25 ns
BQ4010YMA-150N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	DUAL		R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	37.72 mm	150 ns
SNC54ALS218J	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		TTL	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32 words				8	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32X8	32		-55 Cel	DUAL		R-XDIP-T20				Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BQ4115YMA-150	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			65 mA	524288 words		5	5	8	IN-LINE	DIP40,.6	SRAMs	2.54 mm	55 Cel		512KX8	512K		0 Cel	DUAL		R-PDIP-T40				Not Qualified	4194304 bit						.0002 Amp		150 ns
TMS6788-30N	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	DUAL		R-PDIP-T22				Not Qualified	65536 bit						.01 Amp		30 ns
SN54S189AJ	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16X4	16		-55 Cel	DUAL		R-XDIP-T16				Not Qualified									50 ns
TMS4035NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	SEPARATE			1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX1	1K		0 Cel	DUAL		R-PDIP-T16				Not Qualified	1024 bit			NOT SPECIFIED	NOT SPECIFIED				1000 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.