DIP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
D2141L-3	Intel	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18						Not Qualified	4096 bit			e0						150 ns
D2142-2	Intel	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20						Not Qualified	4096 bit			e0						200 ns
DM7489N	National Semiconductor	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	16X4	16		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified				e0
DM85S68N	National Semiconductor	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		16 words		5		4	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.25 V	5.08 mm		7.62 mm	Not Qualified	64 bit	4.75 V		e0			YES		21.755 mm
HT6256DC	Honeywell	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	225 Cel	3-STATE	32KX8	32K	2.5 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V	4.445 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.00033 Amp	35.56 mm	50 ns
K6T1008C2E-DL70	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			41.91 mm	70 ns
K6X0808C1D-DF55	Samsung	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDIP-T28	3	5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V				240		.00001 Amp	36.32 mm	55 ns
K6X4008C1F-DB55	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDIP-T32						Not Qualified	4194304 bit							.000012 Amp		55 ns
KM681000CLP-7L	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00001 Amp	41.91 mm	70 ns
KM681000LP-8	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	BATTERY BACKUP	e0			YES	.00005 Amp	42.035 mm	85 ns
LH5116-10F	Sharp Corporation	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24		5.5 V	5.3 mm		15.24 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			31 mm	100 ns
LH5116H-10	Sharp Corporation	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel		DUAL	1	R-PDIP-T24		5.5 V	5.3 mm		15.24 mm	Not Qualified	16384 bit	4.5 V					YES		31 mm	100 ns
LH5164A-10L	Sharp Corporation	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	-10 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.2 mm		15.24 mm	Not Qualified	65536 bit	4.5 V					YES		36 mm	100 ns
MCM2018AN35	Motorola	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24		5.5 V	4.44 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0			YES		31.69 mm	35 ns
MCM2114P20	Motorola	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	TIN LEAD	DUAL		R-PDIP-T18						Not Qualified	4096 bit			e0						200 ns
MCM2114P45	Motorola	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18						Not Qualified	4096 bit			e0						450 ns
MCM2128P15	Motorola	STANDARD SRAM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm		3-STATE	2KX8	2K			Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0						150 ns
MCM60256AP12	Motorola	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00005 Amp	36.83 mm	120 ns
MCM6810P	Motorola	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		128 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	128X8	128		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24		5.25 V	5.08 mm		15.24 mm	Not Qualified	1024 bit	4.75 V		e0			NO		31.75 mm	450 ns
MT5C2561-20	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	262144 bit			e0				.005 Amp		20 ns
NMC2116N20L	National Semiconductor	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0						200 ns
P5164SL-10	Intel	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V	4.44 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	LG-MAX, SEATED HT-CALCULATED	e0				.00005 Amp	37.2 mm	100 ns
STK11C68-C35I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-CDIP-T28	1	5.5 V	4.11 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	STORE/RECAL TO EEPROM SOFTWARE	e0				.00075 Amp	35.56 mm	35 ns
STK12C68-5C45M	Simtek	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K		-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	4.14 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	EEPROM HARDWARE/SOFTWARE STORE; SOFTWARE RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES	e0		240	YES	.004 Amp	35.56 mm	45 ns
STK12C68-PF25	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDIP-T28	1	5.5 V	4.82 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e4	40	260		.0015 Amp	34.67 mm	25 ns
STK12C68-WF25I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDIP-T28	1	5.5 V	5.08 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e4	40	260		.0025 Amp	36.322 mm	25 ns
STK14C88-5C45M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T32	1	5.5 V	4.11 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000	e0				.003 Amp	40.64 mm	45 ns
STK20C04-WF25I	Simtek	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	512 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		512X8	512		-40 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.57 mm		15.24 mm	Not Qualified	4096 bit	4.5 V		e3		260		.00075 Amp	36.83 mm	25 ns
TC551001CP-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDIP-T32		5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V					YES	.00001 Amp	42 mm	85 ns
TC551001PL-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES		42 mm	85 ns
TC5514AP-3	Toshiba	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18						Not Qualified	4096 bit			e0				.00002 Amp		300 ns
TC5517APL-2	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0				.000001 Amp		200 ns
TC55257BSPL-10L	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00002 Amp	34.9 mm	100 ns
23LCV512-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON			8	IN-LINE	DIP8,.3		2.54 mm	85 Cel	3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		5.5 V	5.334 mm	20 MHz	7.62 mm		524288 bit	2.5 V		e3			NO	.00001 Amp	9.271 mm
M38510/29104BJX	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel		DUAL		R-XDIP-T24		5.5 V				Not Qualified	16384 bit	4.5 V								90 ns
SN54ALS217J	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64X4	64		-55 Cel		DUAL		R-XDIP-T20						Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS2114-15NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18						Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				150 ns
5962-8959837MXX	Texas Instruments	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	125 Cel		128KX8	128K		-55 Cel		DUAL		R-CDIP-T32		5.5 V	3.937 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V							40.64 mm	25 ns
SMJ64C64-30JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel		DUAL		R-XDIP-T22						Not Qualified	65536 bit							.00001 Amp		30 ns
BQ4025YMA-120	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			200 mA	262144 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDIP-T40						Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		120 ns
5962-8685924TX	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel		DUAL		R-XDIP-T22		5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V							29.335 mm	35 ns
SNJ54LS319AJ	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	16X4	16		-55 Cel		DUAL		R-XDIP-T16						Not Qualified										90 ns
SNC54ALS317J	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		TTL	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	OPEN-COLLECTOR	64X4	64		-55 Cel		DUAL		R-XDIP-T20						Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS2147-5NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel		DUAL		R-PDIP-T18						Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				55 ns
TMS4008NL0	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K		0 Cel		DUAL		R-PDIP-T24						Not Qualified	8192 bit									450 ns
SMJ61CD16-25JDM	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T20		5.5 V				Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO			25 ns
7704201EA	Texas Instruments	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-55 Cel	TIN LEAD	DUAL		R-GDIP-T16		5.25 V	5.08 mm	35 MHz	7.62 mm	Qualified	16 bit	4.75 V		e0			NO	.05 Amp	21.34 mm	45 ns
TMS4034NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	SEPARATE			1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX1	1K		0 Cel		DUAL		R-PDIP-T16						Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				650 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.