DIP SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

DS1225Y-150-IND

Dallas Semiconductor

NON-VOLATILE SRAM MODULE

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

85 mA

8192 words

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

85 Cel

8KX8

8K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

5.5 V

Not Qualified

65536 bit

4.5 V

e0

.005 Amp

150 ns

DS1225Y-150IND

Maxim Integrated

NON-VOLATILE SRAM MODULE

INDUSTRIAL

28

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

8192 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

85 Cel

8KX8

8K

-40 Cel

TIN LEAD

DUAL

R-XDMA-P28

5.5 V

Not Qualified

65536 bit

4.5 V

10 YEAR DATA RETENTION

e0

.005 Amp

150 ns

M48Z02-70PC1

STMicroelectronics

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

4.75 V

0 Cel

MATTE TIN

DUAL

1

R-PDIP-T24

5.5 V

9.65 mm

15.24 mm

Not Qualified

16384 bit

4.75 V

e3

YES

.003 Amp

34.545 mm

DM74LS189J

National Semiconductor

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16X4

16

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T16

Not Qualified

e0

DM74LS189N

National Semiconductor

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16X4

16

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T16

Not Qualified

e0

DS1230Y-70

Maxim Integrated

NON-VOLATILE SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-XDMA-P28

1

5.5 V

Not Qualified

262144 bit

4.5 V

10 YEARS DATA RETENTION PERIOD

e0

20

240

.005 Amp

70 ns

DS1230Y-70+

Analog Devices

NON-VOLATILE SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

32KX8

32K

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-XDIP-P28

5.5 V

9.4 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e3

.0006 Amp

38.227 mm

70 ns

IDT7130LA100CB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

125 Cel

3-STATE

1KX8

1K

2 V

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

2

R-CDIP-T48

5.5 V

4.826 mm

15.24 mm

Not Qualified

8192 bit

4.5 V

e0

20

240

.004 Amp

60.96 mm

100 ns

SN74LS189AJ

Texas Instruments

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16X4

16

0 Cel

DUAL

R-XDIP-T16

Not Qualified

80 ns

SN74LS189AN

Texas Instruments

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16X4

16

0 Cel

DUAL

R-PDIP-T16

Not Qualified

80 ns

7132LA55PDGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

85 Cel

2KX8

2K

-40 Cel

Matte Tin (Sn)

DUAL

R-PDIP-T48

1

5.5 V

16384 bit

4.5 V

e3

NOT SPECIFIED

260

55 ns

M48Z08-100PC1

STMicroelectronics

NON-VOLATILE SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

8192 words

5

5

8

IN-LINE

SRAMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

MATTE TIN

DUAL

1

R-PDIP-T28

5.5 V

9.65 mm

15.24 mm

Not Qualified

65536 bit

4.75 V

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

e3

YES

.003 Amp

39.625 mm

100 ns

DS1220Y-200IND

Maxim Integrated

NON-VOLATILE SRAM MODULE

INDUSTRIAL

24

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

2048 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP24,.6

SRAMs

2.54 mm

85 Cel

2KX8

2K

-40 Cel

TIN LEAD

DUAL

R-XDMA-P24

5.5 V

Not Qualified

16384 bit

4.5 V

10 YEAR DATA RETENTION

e0

.004 Amp

200 ns

DS1220Y-200IND+

Maxim Integrated

NON-VOLATILE SRAM MODULE

INDUSTRIAL

24

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

2048 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP24,.6

SRAMs

2.54 mm

85 Cel

2KX8

2K

-40 Cel

MATTE TIN

DUAL

R-XDMA-P24

5.5 V

Not Qualified

16384 bit

4.5 V

10 YEAR DATA RETENTION

e3

.004 Amp

200 ns

DS1220Y-200-IND

Dallas Semiconductor

NON-VOLATILE SRAM MODULE

INDUSTRIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

85 mA

2048 words

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

85 Cel

2KX8

2K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

e0

.004 Amp

200 ns

M48Z35AV-10PC1

STMicroelectronics

NON-VOLATILE SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

32768 words

3.3

3.3

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

32KX8

32K

0 Cel

MATTE TIN

DUAL

R-PDIP-T28

3.6 V

9.65 mm

15.24 mm

Not Qualified

262144 bit

3 V

e3

.003 Amp

39.625 mm

100 ns

M48Z35Y-70PC1

STMicroelectronics

SRAM STD

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

32768 words

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

MATTE TIN

DUAL

1

R-PDIP-T28

5.5 V

9.65 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e3

YES

.003 Amp

39.625 mm

70 ns

DS1220Y-200

Maxim Integrated

NON-VOLATILE SRAM MODULE

COMMERCIAL

24

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

75 mA

2048 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP24,.6

SRAMs

2.54 mm

70 Cel

2KX8

2K

0 Cel

TIN LEAD

DUAL

R-XDMA-P24

5.5 V

Not Qualified

16384 bit

4.5 V

10 YEAR DATA RETENTION

e0

.004 Amp

200 ns

DS1220Y-200+

Maxim Integrated

NON-VOLATILE SRAM MODULE

COMMERCIAL

24

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

75 mA

2048 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP24,.6

SRAMs

2.54 mm

70 Cel

2KX8

2K

0 Cel

MATTE TIN

DUAL

R-XDMA-P24

5.5 V

Not Qualified

16384 bit

4.5 V

10 YEAR DATA RETENTION

e3

.004 Amp

200 ns

DS1230Y-100-IND

Maxim Integrated

NON-VOLATILE SRAM MODULE

INDUSTRIAL

28

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

85 Cel

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-XDMA-T28

5.5 V

Not Qualified

262144 bit

4.5 V

10 YEARS DATA RETENTION PERIOD

e0

.005 Amp

100 ns

74F189PC

Texas Instruments

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

5

4

IN-LINE

2.54 mm

70 Cel

16X4

16

0 Cel

DUAL

R-PDIP-T16

5.5 V

5.08 mm

7.62 mm

64 bit

4.5 V

19.305 mm

27 ns

DS1225Y-200IND

Maxim Integrated

NON-VOLATILE SRAM MODULE

INDUSTRIAL

28

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

8192 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

85 Cel

8KX8

8K

-40 Cel

TIN LEAD

DUAL

R-XDMA-P28

5.5 V

Not Qualified

65536 bit

4.5 V

10 YEAR DATA RETENTION

e0

.005 Amp

200 ns

DS1225Y-200-IND

Dallas Semiconductor

NON-VOLATILE SRAM MODULE

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

85 mA

8192 words

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

85 Cel

8KX8

8K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

5.5 V

Not Qualified

65536 bit

4.5 V

e0

.005 Amp

200 ns

DS1225Y-200IND+

Maxim Integrated

NON-VOLATILE SRAM MODULE

INDUSTRIAL

28

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

8192 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

85 Cel

8KX8

8K

-40 Cel

MATTE TIN

DUAL

R-XDMA-P28

5.5 V

Not Qualified

65536 bit

4.5 V

10 YEAR DATA RETENTION

e3

.005 Amp

200 ns

X24C44P

Xicor

NON-VOLATILE SRAM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

10 mA

16 words

5

5

16

IN-LINE

DIP8,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16X16

16

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T8

5.5 V

4.07 mm

7.62 mm

Not Qualified

256 bit

4.5 V

EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES

e0

NO

.00005 Amp

10.03 mm

375 ns

DS1270Y-70-IND

Dallas Semiconductor

NON-VOLATILE SRAM MODULE

INDUSTRIAL

36

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

2097152 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP36,.6

SRAMs

2.54 mm

85 Cel

3-STATE

2MX8

2M

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDMA-P36

5.5 V

Not Qualified

16777216 bit

4.5 V

5 YEAR DATA RETENTION PERIOD

e0

YES

.00015 Amp

70 ns

DS1270Y-70IND#

Analog Devices

NON-VOLATILE SRAM MODULE

INDUSTRIAL

36

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

2097152 words

5

8

IN-LINE

2.54 mm

85 Cel

2MX8

2M

-40 Cel

DUAL

R-PDIP-P36

5.5 V

10.922 mm

15.24 mm

Not Qualified

16777216 bit

4.5 V

5 YEAR DATA RETENTION

NOT SPECIFIED

NOT SPECIFIED

53.213 mm

70 ns

IDT7130LA100P

Integrated Device Technology

MULTI-PORT SRAM

COMMERCIAL

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

110 mA

1024 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

70 Cel

3-STATE

1KX8

1K

2 V

0 Cel

Tin/Lead (Sn85Pb15)

DUAL

2

R-PDIP-T48

5.5 V

5.08 mm

15.24 mm

Not Qualified

8192 bit

4.5 V

e0

30

225

.004 Amp

61.849 mm

100 ns

IDT7130LA100PI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

TIN LEAD

DUAL

2

R-PDIP-T48

5.5 V

5.08 mm

15.24 mm

Not Qualified

8192 bit

4.5 V

e0

.004 Amp

61.849 mm

100 ns

23K640-E/P

Microchip Technology

STANDARD SRAM

AUTOMOTIVE

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

TS 16949

THROUGH-HOLE

SERIAL

SYNCHRONOUS

10 mA

8192 words

SEPARATE

3

3/3.3

8

IN-LINE

DIP8,.3

SRAMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

2.7 V

-40 Cel

MATTE TIN

DUAL

1

R-PDIP-T8

3.6 V

5.334 mm

16 MHz

7.62 mm

Not Qualified

65536 bit

2.7 V

e3

NO

.00001 Amp

9.271 mm

23K640-I/P

Microchip Technology

STANDARD SRAM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

TS 16949

THROUGH-HOLE

SERIAL

SYNCHRONOUS

10 mA

8192 words

SEPARATE

3

3/3.3

8

IN-LINE

DIP8,.3

SRAMs

2.54 mm

85 Cel

3-STATE

8KX8

8K

2.7 V

-40 Cel

MATTE TIN

DUAL

1

R-PDIP-T8

3.6 V

5.334 mm

20 MHz

7.62 mm

Not Qualified

65536 bit

2.7 V

e3

NO

.000004 Amp

9.271 mm

M48Z12-70PC1

STMicroelectronics

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

4.5 V

0 Cel

MATTE TIN

DUAL

1

R-PDIP-T24

5.5 V

9.65 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

e3

YES

.003 Amp

34.545 mm

23A1024-I/P

Microchip Technology

STANDARD SRAM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

TS 16949

THROUGH-HOLE

SERIAL

SYNCHRONOUS

10 mA

131072 words

COMMON/SEPARATE

1.8/2

8

IN-LINE

DIP8,.3

SRAMs

2.54 mm

85 Cel

3-STATE

128KX8

128K

1.7 V

-40 Cel

MATTE TIN

DUAL

1

R-PDIP-T8

2.2 V

5.334 mm

20 MHz

7.62 mm

Not Qualified

1048576 bit

1.7 V

e3

NO

.000004 Amp

9.271 mm

DS1225AD-85

Maxim Integrated

NON-VOLATILE SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

75 mA

8192 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDMA-P28

5.5 V

10.54 mm

15.24 mm

Not Qualified

65536 bit

4.5 V

10 YEAR DATA RETENTION

e0

.005 Amp

38.865 mm

85 ns

DS1225AD-85+

Analog Devices

NON-VOLATILE SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

75 mA

8192 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

70 Cel

8KX8

8K

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDMA-P28

5.5 V

Not Qualified

65536 bit

4.5 V

10 YEAR DATA RETENTION

e3

.01 Amp

85 ns

DS1230Y-200-IND

Dallas Semiconductor

NON-VOLATILE SRAM MODULE

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

85 Cel

32KX8

32K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

5.5 V

Not Qualified

262144 bit

4.5 V

10 YEARS DATA RETENTION PERIOD

e0

.005 Amp

200 ns

DS1230Y-200IND

Maxim Integrated

NON-VOLATILE SRAM MODULE

INDUSTRIAL

28

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

85 Cel

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-XDMA-P28

5.5 V

Not Qualified

262144 bit

4.5 V

e0

.005 Amp

200 ns

DS1230Y-200IND+

Analog Devices

NON-VOLATILE SRAM MODULE

INDUSTRIAL

28

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

85 Cel

32KX8

32K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-XDMA-P28

5.5 V

Not Qualified

262144 bit

4.5 V

e3

.0006 Amp

200 ns

IS62C1024L-70W

Integrated Silicon Solution

STANDARD SRAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

SRAMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T32

5.5 V

4.572 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.00025 Amp

41.91 mm

70 ns

IS62C1024L-70WI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

SRAMs

2.54 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

1

R-PDIP-T32

5.5 V

4.572 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.0004 Amp

41.91 mm

70 ns

M5M5256DP-70LL

Mitsubishi Electric

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

45 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T28

5.5 V

5.5 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e0

YES

.00001 Amp

36.7 mm

70 ns

DS1230Y-200

Maxim Integrated

NON-VOLATILE SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-XDMA-P28

1

5.5 V

Not Qualified

262144 bit

4.5 V

10 YEARS DATA RETENTION PERIOD

e0

.005 Amp

200 ns

DS1230Y-200+

Analog Devices

NON-VOLATILE SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

70 Cel

32KX8

32K

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-XDMA-P28

5.5 V

Not Qualified

262144 bit

4.5 V

e3

.0006 Amp

200 ns

K6X0808C1D-DF70

Samsung

STANDARD SRAM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

25 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

DUAL

R-PDIP-T28

1

5.5 V

5.08 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

.00001 Amp

36.32 mm

70 ns

M5M5178P-35

Mitsubishi Electric

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

4.5 V

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T28

5.5 V

Not Qualified

65536 bit

4.5 V

e0

YES

.002 Amp

35 ns

DS1270W-100-IND

Dallas Semiconductor

NON-VOLATILE SRAM

INDUSTRIAL

36

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

50 mA

2097152 words

3.3

3.3

8

IN-LINE

DIP36,.6

SRAMs

2.54 mm

85 Cel

2MX8

2M

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T36

Not Qualified

16777216 bit

e0

.0002 Amp

100 ns

DS1270W-100IND#

Maxim Integrated

NON-VOLATILE SRAM MODULE

INDUSTRIAL

36

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

8

IN-LINE

2.54 mm

85 Cel

2MX8

2M

-40 Cel

MATTE TIN

DUAL

R-PDIP-P36

3.6 V

10.922 mm

15.24 mm

Not Qualified

16777216 bit

3 V

e3

53.213 mm

100 ns

HM628128DLPI-7

Renesas Technology

STANDARD SRAM

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

2.54 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDIP-T32

5.5 V

5.08 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

41.9 mm

70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.