DIP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
HM62256LP-8	Renesas Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V						35.6 mm	85 ns
HM62256LP8	Advanced Electronic Packaging	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.00005 Amp	35.6 mm	85 ns
IDT6116LA45TDB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0		YES	.0002 Amp	32.004 mm	45 ns
IDT71256SA15TPG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.572 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e3			.015 Amp	34.671 mm	15 ns
M48Z02-200PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3		YES	.003 Amp	34.545 mm	200 ns
M48Z128Y-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3		YES	.004 Amp	42.8 mm	85 ns
MB8464A-10LPSK	Fujitsu Semiconductor America	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel		8KX8	8K	2 V	0 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.25 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				YES		35.36 mm	100 ns
MB8464A-10LP-SK	Fujitsu	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0			.000025 Amp		100 ns
NTE2114	Nte Electronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3		SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K	5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T18		5.25 V			Not Qualified	4096 bit	4.75 V		e0			.1 Amp		300 ns
STK12C68-5C55M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-CDIP-T28	1	5.5 V	4.14 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES				.004 Amp	35.56 mm	35 ns
X24C44PI	Xicor	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	16 words		5	5	16	IN-LINE	DIP8,.3		SRAMs	2.54 mm	85 Cel	3-STATE	16X16	16		-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T8		5.5 V	4.07 mm	7.62 mm	Not Qualified	256 bit	4.5 V	EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES	e0		NO	.00005 Amp	10.03 mm	375 ns
DS1249Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		262144 words		5		8	MICROELECTRONIC ASSEMBLY				2.54 mm	70 Cel		256KX8	256K		0 Cel	TIN LEAD	DUAL		R-XDMA-P32		5.5 V	10.29 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	10 YEAR DATA RETENTION	e0				53.085 mm	100 ns
HM1-6514-8	Intersil	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	14 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3		SRAMs	2.54 mm	125 Cel	3-STATE	1KX4	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0			.000025 Amp		320 ns
DS1220Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6		SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.5 V			Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e0			.004 Amp		100 ns
DS1220Y-100-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V		e0			.004 Amp		100 ns
DS1220Y-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6		SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P24		5.5 V			Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e0			.004 Amp		100 ns
M48Z18-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE			SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3		YES	.003 Amp	39.625 mm	100 ns
CY7C132-55PC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.334 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; INTERRUPT FLAG	e0		YES	.015 Amp	61.976 mm	55 ns
DS1225Y	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP	e0				38.862 mm	200 ns
SN74LS219AN	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3		SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL		R-PDIP-T16					Not Qualified
M48Z128Y-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3	225	YES	.004 Amp	42.8 mm	70 ns
K6T1008C2E-DB70	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDIP-T32	1	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						41.91 mm	70 ns
D2001	Intel	NON-VOLATILE SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				128 words				8	IN-LINE	DIP18,.3		SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1024 bit			e0					300 ns
MCM2018AN45	Motorola	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24		5.5 V	4.44 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0		YES		31.69 mm	45 ns
K6T1008C2C-DB70	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						41.91 mm	70 ns
KM62256ALP-10	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	BATTERY BACKUP	e0		YES	.00005 Amp	36.45 mm	100 ns
LH5268A-10LL	Sharp Corporation	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.2 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0		YES		36 mm	100 ns
MB81C78A-45PSK	Fujitsu Semiconductor America	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel		8KX8	8K		0 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.25 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN			YES		35.36 mm	45 ns
MB81C78A-45P-SK	Fujitsu	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0			.015 Amp		45 ns
MCM60L64P10	Motorola	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0		YES		36.83 mm	100 ns
MCM60L64P12	Motorola	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0		YES		36.83 mm	120 ns
TC551001APL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0		YES		42 mm	70 ns
TC551001APL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0		YES		42 mm	70 ns
TC551001BPL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						42 mm	70 ns
TC5588P-20	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.45 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			.001 Amp	34.9 mm	20 ns
21L02HPC	Fairchild Semiconductor	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	SEPARATE	5		1	IN-LINE	DIP16,.3		SRAMs	2.54 mm	70 Cel	3-STATE	1KX1	1K		0 Cel	TIN LEAD	DUAL		R-PDIP-T16	2A	5.5 V			Not Qualified	1024 bit	4.5 V		e0					250 ns
6206-100/BXAJC	Motorola	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	5.84 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0		YES	.02 Amp	37.145 mm	100 ns
93L412PC	Fairchild Semiconductor	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	4	IN-LINE	DIP22,.4		SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	256X4	256		0 Cel	TIN LEAD	DUAL		R-PDIP-T22	2A				Not Qualified	1024 bit			e0					60 ns
93L422DMQB	National Semiconductor	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	256 words		5	5	4	IN-LINE	DIP22,.4		SRAMs	2.54 mm	125 Cel	3-STATE	256X4	256		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	1024 bit			e0					75 ns
CY62256LL-70PC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.000005 Amp	36.322 mm	70 ns
CY7C122-15PC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	256 words		5	5	4	IN-LINE	DIP22,.4		SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T22		5.5 V	5.08 mm	10.16 mm	Not Qualified	1024 bit	4.5 V		e0		YES	.09 Amp	28.067 mm	15 ns
CY7C128-35PC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24		5.5 V	4.826 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0		YES	.02 Amp	30.099 mm	35 ns
CY7C128A-20DMB	Cypress Semiconductor	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0		YES	.02 Amp	31.877 mm	20 ns
CY7C128A-45PC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	1	5.5 V	4.826 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0		YES	.02 Amp	31.75 mm	45 ns
CY7C128A-55DMB	Cypress Semiconductor	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0		YES	.02 Amp	31.877 mm	55 ns
CY7C167A-15PC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		1	IN-LINE				2.54 mm	70 Cel		16KX1	16K		0 Cel	TIN LEAD	DUAL		R-PDIP-T20		5.5 V	4.826 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0				25.527 mm	15 ns
CY7C199-35PC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.826 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0				35.4965 mm	35 ns
CYM1641HD-35C	Cypress Semiconductor	SRAM MODULE	COMMERCIAL	48	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1800 mA	1048576 words	COMMON	5	5	4	MICROELECTRONIC ASSEMBLY	DIP48,.9	8	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T48		5.5 V			Not Qualified	4194304 bit	4.5 V	CONFIGURABLE AS 256K X 16	e0		NO	.32 Amp		35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.