DIP SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

TMS40L47-25NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

20

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP20,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T20

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

250 ns

TMS4043-1JL

Texas Instruments

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

70 Cel

3-STATE

256X4

256

0 Cel

DUAL

R-XDIP-T16

Not Qualified

1024 bit

NOT SPECIFIED

NOT SPECIFIED

650 ns

BQ4013YMA-85N

Texas Instruments

NON-VOLATILE SRAM MODULE

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

105 mA

131072 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP32,.6

SRAMs

2.54 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDMA-P32

5.5 V

9.53 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

42.8 mm

85 ns

5962-01-208-5824

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

150 ns

8102403VA

Texas Instruments

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

7 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

125 Cel

3-STATE

4KX1

4K

2 V

-55 Cel

DUAL

R-GDIP-T18

5.5 V

5.08 mm

7.62 mm

Not Qualified

4096 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.000025 Amp

220 ns

SNJ5481AJ

Texas Instruments

STANDARD SRAM

MILITARY

14

DIP

RECTANGULAR

CERAMIC

NO

TTL

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

1

IN-LINE

DIP14,.3

SRAMs

2.54 mm

125 Cel

OPEN-COLLECTOR

16X1

16

-55 Cel

DUAL

R-XDIP-T14

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SMJ64C64-25JDM

Texas Instruments

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

130 mA

16384 words

COMMON

5

5

4

IN-LINE

DIP22,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

DUAL

1

R-CDIP-T22

5.5 V

Not Qualified

65536 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

.0001 Amp

25 ns

5962-8959838MXA

Texas Instruments

STANDARD SRAM

MILITARY

32

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

2.54 mm

125 Cel

128KX8

128K

-55 Cel

TIN LEAD

DUAL

R-CDIP-T32

5.5 V

3.937 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

40.64 mm

20 ns

SM68CE256-35JDM

Texas Instruments

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

1

R-CDIP-T28

5.5 V

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0002 Amp

35 ns

5962-8959820MZX

Texas Instruments

STANDARD SRAM

MILITARY

32

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

2.54 mm

125 Cel

128KX8

128K

-55 Cel

DUAL

R-CDIP-T32

5.5 V

3.937 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

40.64 mm

25 ns

SM68CE16-35JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0001 Amp

35 ns

SNJ54LS213J

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

TTL

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

12

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16X12

16

-55 Cel

DUAL

R-XDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

54F189DL

Texas Instruments

STANDARD SRAM

AUTOMOTIVE

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

5

4

IN-LINE

2.54 mm

125 Cel

16X4

16

-40 Cel

DUAL

R-GDIP-T16

5.5 V

5.08 mm

7.62 mm

64 bit

4.5 V

LG-MAX

19.94 mm

32 ns

BQ4011YMA-150

Texas Instruments

NON-VOLATILE SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

75 mA

32768 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDMA-P28

5.5 V

9.53 mm

18.415 mm

Not Qualified

262144 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

37.72 mm

150 ns

TMS2114L-20NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

200 ns

SNJ54LS212J

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

TTL

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

9

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16X9

16

-55 Cel

DUAL

R-XDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SN54170J-00

Texas Instruments

STANDARD SRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

5

4

IN-LINE

2.54 mm

125 Cel

OPEN-COLLECTOR

4X4

4

-55 Cel

DUAL

1

R-GDIP-T16

5.5 V

5.08 mm

7.62 mm

Not Qualified

16 bit

4.5 V

NO

19.56 mm

40 ns

BQ4010YMA-85

Texas Instruments

NON-VOLATILE SRAM MODULE

COMMERCIAL

28

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

75 mA

8192 words

5

5

8

MICROELECTRONIC ASSEMBLY

DIP28,.6

SRAMs

2.54 mm

70 Cel

8KX8

8K

0 Cel

DUAL

R-XDMA-T28

5.5 V

9.53 mm

18.415 mm

Not Qualified

65536 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

37.72 mm

85 ns

SN54LS219AJ

Texas Instruments

STANDARD SRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16X4

16

-55 Cel

DUAL

R-XDIP-T16

Not Qualified

MM2114N-15

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

4

IN-LINE

70 Cel

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

5.25 V

Not Qualified

4096 bit

4.75 V

150 ns

SN54LS317J

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

4

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

OPEN-COLLECTOR

64X4

64

-55 Cel

DUAL

R-XDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SMJ5517-20JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

90 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

DUAL

R-XDIP-T24

Not Qualified

16384 bit

NOT SPECIFIED

NOT SPECIFIED

.0001 Amp

200 ns

TMS2149-4NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

45 ns

SM61CD64-40JD

Texas Instruments

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

SEPARATE

5

5

1

IN-LINE

DIP22,.3

SRAMs

2.54 mm

125 Cel

3-STATE

64KX1

64K

4.5 V

-55 Cel

DUAL

R-XDIP-T22

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

.00001 Amp

40 ns

SM68CE64-45JDM

Texas Instruments

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

2 V

-55 Cel

DUAL

1

R-CDIP-T28

5.5 V

Not Qualified

65536 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0001 Amp

45 ns

SN54ALS317J

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

4

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

OPEN-COLLECTOR

64X4

64

-55 Cel

DUAL

R-XDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TMS4042-2JL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

COMMON

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

256X4

256

0 Cel

DUAL

R-XDIP-T18

Not Qualified

1024 bit

NOT SPECIFIED

NOT SPECIFIED

450 ns

SMJ64C64-45JDM

Texas Instruments

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

16384 words

COMMON

5

5

4

IN-LINE

DIP22,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

DUAL

1

R-CDIP-T22

5.5 V

Not Qualified

65536 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

.0001 Amp

45 ns

SN54S289BJ

Texas Instruments

STANDARD SRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

5

5

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

125 Cel

OPEN-COLLECTOR

16X4

16

-55 Cel

DUAL

R-XDIP-T16

Not Qualified

50 ns

SM61CD64-35JDM

Texas Instruments

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

SEPARATE

5

5

1

IN-LINE

DIP22,.3

SRAMs

2.54 mm

125 Cel

3-STATE

64KX1

64K

2 V

-55 Cel

DUAL

1

R-CDIP-T22

5.5 V

Not Qualified

65536 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

.0001 Amp

35 ns

TMS2150-3NT

Texas Instruments

CACHE TAG SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

512 words

5

8

IN-LINE

2.54 mm

70 Cel

TOTEM POLE

512X8

512

0 Cel

DUAL

1

R-PDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

4096 bit

4.5 V

NO

31.64 mm

35 ns

SNC54LS218J

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

TTL

MIL-STD-883 Class B (Modified)

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32 words

8

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

3-STATE

32X8

32

-55 Cel

DUAL

R-XDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

5962-01-153-7647

Texas Instruments

STANDARD SRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

140 mA

256 words

5

5

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

125 Cel

OPEN-COLLECTOR

256X1

256

-55 Cel

DUAL

R-XDIP-T16

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

SMJ68CE256-55JDM

Texas Instruments

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

1

R-CDIP-T28

5.5 V

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0002 Amp

55 ns

TMS6788-25N

Texas Instruments

STANDARD SRAM

COMMERCIAL

22

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

16384 words

COMMON

5

5

4

IN-LINE

DIP22,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

DUAL

R-PDIP-T22

Not Qualified

65536 bit

.01 Amp

25 ns

SNJ54ALS317J

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

TTL

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

4

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

OPEN-COLLECTOR

64X4

64

-55 Cel

DUAL

R-XDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TMS6264L-15NW

Texas Instruments

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

2 V

0 Cel

DUAL

R-PDIP-T28

Not Qualified

65536 bit

NOT SPECIFIED

NOT SPECIFIED

.00005 Amp

150 ns

SNC54LS311J

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

TTL

MIL-STD-883 Class B (Modified)

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

9

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

OPEN-COLLECTOR

16X9

16

-55 Cel

DUAL

R-XDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SM61CD256-55JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

262144 words

SEPARATE

5

5

1

IN-LINE

DIP24,.6

SRAMs

2.54 mm

125 Cel

3-STATE

256KX1

256K

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

55 ns

TMS4039JL

Texas Instruments

STANDARD SRAM

COMMERCIAL

22

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

256 words

SEPARATE

4

IN-LINE

DIP22,.4

SRAMs

2.54 mm

70 Cel

3-STATE

256X4

256

0 Cel

DUAL

R-XDIP-T22

Not Qualified

1024 bit

NOT SPECIFIED

NOT SPECIFIED

1000 ns

SNJ54LS289AJ

Texas Instruments

STANDARD SRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

125 Cel

OPEN-COLLECTOR

16X4

16

-55 Cel

DUAL

R-XDIP-T16

Not Qualified

90 ns

TMS4045-25NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

250 ns

5962-8670508RA

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

4

IN-LINE

125 Cel

4KX4

4K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T20

5.5 V

Not Qualified

16384 bit

4.5 V

e0

55 ns

SMJ68CE16-25JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0001 Amp

25 ns

SMJ61CD16-45JDM

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

16384 words

SEPARATE

5

5

1

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX1

16K

2 V

-55 Cel

DUAL

1

R-CDIP-T20

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

45 ns

MM2114N-15L

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

4

IN-LINE

70 Cel

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

5.25 V

Not Qualified

4096 bit

4.75 V

150 ns

TMS4044-45NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

55 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

4.5 V

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

450 ns

SNC54LS318J

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

TTL

MIL-STD-883 Class B (Modified)

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32 words

8

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

OPEN-COLLECTOR

32X8

32

-55 Cel

DUAL

R-XDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.