DIP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M48Z256-120PL1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	262144 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		0 Cel	TIN LEAD	DUAL	1	R-XDMA-T32		5.5 V				Not Qualified	2097152 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		120 ns
M48Z58-70PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	Matte Tin (Sn)	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	70 ns
M48Z02-150PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	34.545 mm	150 ns
M48Z02-200PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	34.545 mm	200 ns
M48Z35AY-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V				Not Qualified	262144 bit	4.5 V								100 ns
M48Z58-70PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0				.003 Amp	39.625 mm	70 ns
M48Z128-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDMA-P32		5.5 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e0			YES	.004 Amp	42.8 mm	85 ns
M48Z18-100PC1TR	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	39.625 mm	100 ns
M48Z12-150PC6TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit			e3				.003 Amp		150 ns
M48Z128-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3			YES	.004 Amp	42.8 mm	70 ns
M48Z12-150PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit			e3				.003 Amp		150 ns
M48Z2M1Y-85PL1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	IN-LINE			2.54 mm	70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDIP-T36		5.5 V	9.52 mm		15.24 mm	Not Qualified	16777216 bit	4.5 V		e0					52.96 mm	85 ns
M48Z2M1V-85PL9	STMicroelectronics	NON-VOLATILE SRAM		36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	IN-LINE			2.54 mm			2MX8	2M				DUAL		R-PDIP-T36		3.6 V	9.52 mm		15.24 mm	Not Qualified	16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			52.96 mm	85 ns
M48Z02-120PC6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24						Not Qualified	16384 bit			e0				.003 Amp		120 ns
M48Z30Y-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-XDMA-T28		5.5 V				Not Qualified	262144 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		85 ns
M48Z08Y-10PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	39.625 mm	100 ns
M48Z08-100PC1TR	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.75 V		e3				.003 Amp	39.625 mm	100 ns
M48Z59W-70PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0				.003 Amp		70 ns
M48Z128V-120PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	MATTE TIN	DUAL		R-PDMA-P32		3.6 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	3 V		e3				.003 Amp	42.8 mm	120 ns
M48Z35-70PC1TR	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		e0			YES		39.625 mm	70 ns
M48Z2M1V-70PL9	STMicroelectronics	NON-VOLATILE SRAM		36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	IN-LINE			2.54 mm			2MX8	2M			TIN LEAD	DUAL		R-PDIP-T36		3.6 V	9.52 mm		15.24 mm	Not Qualified	16777216 bit	3 V		e0					52.96 mm	70 ns
M48Z512AY-70PM9	STMicroelectronics	NON-VOLATILE SRAM MODULE		32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE			2.54 mm		3-STATE	512KX8	512K				DUAL	1	R-PDIP-T32		5.5 V	9.52 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP				YES		42.8 mm	70 ns
M48Z2M1-70PL1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2097152 words		5	5	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2MX8	2M		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T36		5.5 V	9.52 mm		15.24 mm	Not Qualified	16777216 bit	4.75 V		e0			YES	.008 Amp	52.96 mm	70 ns
M48Z512AY-70PM6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDIP-T32		5.5 V	9.52 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V						.005 Amp	42.8 mm	70 ns
M48Z35V-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		3.6 V	9.65 mm		15.24 mm	Not Qualified	262144 bit	3 V	BATTERY BACKUP; WRITE PROTECT	e0				.003 Amp	39.625 mm	100 ns
M48Z30-100PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-XDMA-T28		5.5 V				Not Qualified	262144 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		100 ns
M48Z12-150PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	34.545 mm	150 ns
M48Z35AV-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	MATTE TIN	DUAL		R-PDIP-T28		3.6 V	9.65 mm		15.24 mm	Not Qualified	262144 bit	3 V		e3				.003 Amp	39.625 mm	100 ns
M48Z59PC	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel		DUAL	1	R-PDIP-T28			9.65 mm		15.24 mm	Not Qualified	65536 bit		BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; SELF CONTAINED BATTERY				YES		39.625 mm
M48Z35AY-70PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e3				.003 Amp	39.625 mm	70 ns
M48Z2M1V-70PL1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	IN-LINE			2.54 mm	70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDIP-T36		3.6 V	9.52 mm		15.24 mm	Not Qualified	16777216 bit	3 V		e0					52.96 mm	70 ns
M48Z12-70PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit			e3				.003 Amp		70 ns
M48Z12-200PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	34.545 mm	200 ns
M48Z30Y-100PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-XDMA-T28		5.5 V				Not Qualified	262144 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		100 ns
935154900112	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5		8	IN-LINE			2.54 mm	85 Cel		256X8	256		-40 Cel		DUAL		R-PDIP-T8		6 V	4.2 mm		7.62 mm		2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE						9.5 mm
N74F219AN	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.7 mm		7.62 mm	Not Qualified	64 bit	4.5 V					NO		21.6 mm	8 ns
N74F410N	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		16 words		5		4	IN-LINE				70 Cel	3-STATE	16X4	16		0 Cel		DUAL		R-PDIP-T18		5.5 V				Not Qualified	64 bit	4.5 V								10 ns
PCF8570P	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T8		6 V	4.2 mm	.1 MHz	7.62 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4			NO	.0000004 Amp	9.5 mm
N74F670N	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4X4	4		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.7 mm		7.62 mm	Not Qualified	16 bit	4.5 V					NO		21.6 mm	12.5 ns
74HCT670N	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		5.5 V	4.7 mm		7.62 mm	Not Qualified	16 bit	4.5 V		e4			NO		21.6 mm	60 ns
PCF8570PN	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T8		6 V	4.2 mm	.1 MHz	7.62 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4			NO	.0000004 Amp	9.5 mm
8602301EX	NXP Semiconductors	CACHE SRAM	MILITARY	16	DIP	RECTANGULAR	UNSPECIFIED	NO	1	BIPOLAR	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE				125 Cel		256X1	256		-55 Cel		DUAL		R-XDIP-T16		5.25 V				Not Qualified	256 bit	4.75 V
74HC670NB	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5		4	IN-LINE				125 Cel	3-STATE	4X4	4		-40 Cel		DUAL	1	R-PDIP-T16		6 V				Not Qualified	16 bit	2 V					NO			59 ns
82S212/BWA-40	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	9	IN-LINE	DIP22,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256X9	256		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified				e0						70 ns
74HCT670N,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		5.5 V	4.7 mm		7.62 mm	Not Qualified	16 bit	4.5 V		e4			NO		21.6 mm	60 ns
N74F189AN	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.2 mm		7.62 mm	Not Qualified	64 bit	4.5 V	INVERTED OUTPUTS				NO		19.025 mm	8 ns
PCF8571P	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5		8	IN-LINE			2.54 mm	85 Cel		128X8	128	1 V	-40 Cel		DUAL	1	R-PDIP-T8		6 V	4.2 mm		7.62 mm	Not Qualified	1024 bit	2.5 V	I2C BUS INTERFACE				NO		9.5 mm
74HCT670NB	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5		4	IN-LINE				125 Cel	3-STATE	4X4	4		-40 Cel		DUAL	1	R-PDIP-T16		5.5 V				Not Qualified	16 bit	4.5 V					NO			60 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.